19‐3: Lifetime Enhancement Toward Commercialization of Hyperfluorescence

2021 ◽  
Vol 52 (1) ◽  
pp. 232-235
Author(s):  
Junji Adachi ◽  
Sinya Otsu ◽  
Hayato Kakizoe ◽  
Takahito Oyamada
Keyword(s):  
Lifetime Enhancement

Lifetime Enhancement of Dynamic Heterogeneous Wireless Sensor Networks with Energy-Harvesting Sensors

2017 ◽  
Vol 22 (5) ◽  
pp. 931-942 ◽  
Author(s):  
Chun-Cheng Lin ◽  
Yung-Chiao Chen ◽  
Jiann-Liang Chen ◽  
Der-Jiunn Deng ◽  
Shang-Bin Wang ◽  
...  
Keyword(s):  
Wireless Sensor Networks ◽  
Sensor Networks ◽  
Energy Harvesting ◽  
Wireless Sensor ◽  
Heterogeneous Wireless Sensor Networks ◽  
Lifetime Enhancement

Improvement of Minority Carrier Lifetime in Thick 4H-SiC Epi-layers by Multiple Thermal Oxidations and Anneals

2013 ◽  
Vol 1538 ◽  
pp. 329-333 ◽  
Author(s):  
Lin Cheng ◽  
Michael J. O’Loughlin ◽  
Alexander V. Suvorov ◽  
Edward R. Van Brunt ◽  
Albert A. Burk ◽  
...  
Keyword(s):  
High Temperature ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Power Devices ◽  
Oxidation Treatment ◽  
Temperature Oxidation ◽  
Oxidation Step ◽  
High Temperature Anneal ◽  
Lifetime Enhancement

ABSTRACTThis paper details the development of a technique to improve the minority carrier lifetime of 4H-SiC thick (≥ 100 μm) n-type epitaxial layers through multiple thermal oxidations. A steady improvement in lifetime is seen with each oxidation step, improving from a starting ambipolar carrier lifetime of 1.09 µs to 11.2 µs after 4 oxidation steps and a high-temperature anneal. This multiple-oxidation lifetime enhancement technique is compared to a single high-temperature oxidation step, and a carbon implantation followed by a high-temperature anneal, which are traditional ways to achieve high ambipolar lifetime in 4H-SiC n-type epilayers. The multiple oxidation treatment resulted in a high minimum carrier lifetime of 6 µs, compared to < 2 µs for other treatments. The implications of lifetime enhancement to high-voltage/high-current 4H-SiC power devices are also discussed.

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