20‐4: Study on the Effect of OLED Device Lifetime Improvement according to Hole Injection Barrier and p‐Dopants

2020 ◽  
Vol 51 (1) ◽  
pp. 289-292
Author(s):  
Jaechul Hong ◽  
Yoonsu Kang ◽  
Jinyoung Lee ◽  
Seungjae Jeong ◽  
Jaehong Ahn ◽  
...  
2017 ◽  
Vol 51 ◽  
pp. 162-167 ◽  
Author(s):  
Hiroyuki Tajima ◽  
Naoto Yasukawa ◽  
Hisaki Nakatani ◽  
Seiichi Sato ◽  
Tomofumi Kadoya ◽  
...  

2011 ◽  
Vol 1 (SRMS-7) ◽  
Author(s):  
Yu-Zhan Wang ◽  
Xing-Yu Gao ◽  
Andrew Wee ◽  
Dong-Chen Qi ◽  
Shi Chen

We investigate the interfacial electronic structures of the heterojunction Fe/pentacene/Fe on Cu(100) substrate, using synchrotron-based photoemission spectroscopy. No chemical reaction is observed at either Fe/pentacene or pentacene/Fe interface. The hole injection barrier was estimated to be about 0.95 eV between pentacene and under the Fe thin film. C K-edge NEXAFS revealed that the long axis of pentacene molecule was almost perpendicular to the surface plane. With increasing Fe thickness deposited on pentacene film, the pentacene's HOMO shifts to higher binding energy whereas the C 1s binding energy showed an interesting unusual behaviour due to the initial band bending gradually suppressed by the increasing core-hole screening effect.


Coatings ◽  
2019 ◽  
Vol 9 (10) ◽  
pp. 648 ◽  
Author(s):  
Hong-Gyu Park ◽  
Sang-Geon Park

We report the electro-optical properties of an organic thin-film by varying the thickness of 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile (HAT(CN)6), included therein as an interlayer. Devices with HAT(CN)6, which are 7 nm thin films used as interlayers, exhibited good current density–voltage characteristics due to an improved hole injection barrier resulting from carrier ladder effects and carrier transport phenomena. The device without an interlayer showed the worst driving voltage characteristics due to the hole injection barrier. At low driving voltages, a device using 7 nm HAT(CN)6 as an interlayer exhibited a current density about 9.9 times higher than that of a device using 20 nm HAT(CN)6, and showed a current density about 9600 times higher than that of a device without an interlayer. Due to the proper carrier balance, the device using 7 nm HAT(CN)6 as an interlayer achieved a maximum current efficiency of 10.8 cd/A, which was the highest among the devices studied. This shows that the electro-optical properties of devices using HAT(CN)6 as an interlayer are dominated by the holes.


2012 ◽  
Vol 1402 ◽  
Author(s):  
Hong Wang ◽  
Zhuoyu Ji ◽  
Liwei Shang ◽  
Yingping Chen ◽  
Congyan Lu ◽  
...  

ABSTRACTIn this paper, low-cost rectifier based on an organic diode for use in organic radio frequency identification (RFID) tags is proposed. Pentacene is the electroactive layer, with 7,7,8,8-tetracyanoquinodimethane (TCNQ) modified low-cost copper (Cu) and aluminum (Al) as the Ohmic and Schottky contacts, respectively. Hole injection barrier between Cu and pentacene can be decreased by forming the self-assembled layers of Cu-TCNQ. The diode shows a high rectification ratio of approximately 2×106 at 5V and the organic diode based rectifier circuit generated a dc output voltage of approximately 2V at 13.56MHz, using an input ac signal with zero-to-peak voltage amplitude of 5 V. The results indicate that chemical modification of the low-cost electrodes could be an efficient way toward low-cost high performance organic electronics devices.


2009 ◽  
Vol 95 (20) ◽  
pp. 203305 ◽  
Author(s):  
Yu-Chiang Chao ◽  
Yi-Cheng Lin ◽  
Min-Zhi Dai ◽  
Hsiao-Wen Zan ◽  
Hsin-Fei Meng

2016 ◽  
Vol 120 (4) ◽  
pp. 2292-2298 ◽  
Author(s):  
Junkyeong Jeong ◽  
Soohyung Park ◽  
Seong Jun Kang ◽  
Hyunbok Lee ◽  
Yeonjin Yi

2011 ◽  
Vol 15 (09n10) ◽  
pp. 964-972
Author(s):  
Ronghua Guo ◽  
Lijuan Zhang ◽  
Yuexing Zhang ◽  
Yongzhong Bian ◽  
Jianzhuang Jiang

Density functional theory (DFT) calculations were carried out to investigate the semiconductor performance of a series of phthalocyaninato zinc complexes, namely Zn[Pc(β-OCH3)8] (1), ZnPc (2), and Zn[Pc(β-COOCH3)8] (3) {[ Pc(β-OCH3)8]2- = dianion of 2,3,9,10,16,17,23,24-octamethoxyphthalocyanine; Pc2- = dianion of phthalocyanine; [ Pc(β-COOCH3)8]2- = dianion of 2,3,9,10,16,17,23,24-octamethoxycarbonylphthalocyanine} for organic field effect transistor (OFET). The effect of peripheral substituents on tuning the nature of phthalocyaninato zinc semiconductor has been clearly revealed. Introduction of eight weak electron-donating methoxy groups onto the peripheral positions of ZnPc (2) leads to a decrease in the hole injection barrier relative to Au electrode and an increase in the electron injection barrier, making compound 1 a better p-type semiconductor material in comparison with 2. In contrast, peripheral methoxycarbonyl substitution depresses the energy level of LUMO and thus induces an increase for the electron affinity (EA) value of ZnPc (2), resulting in the change of semiconductor nature from p-type for ZnPc (2) to n-type for Zn[Pc(β-COOCH3)8] (3) due to the improved electron injection ability. The calculated charge transfer mobility for hole is 1.05 cm2.V-1.s-1 for 1 and 5.33 cm2.V-1.s-1 for 2, while that for electron is 0.16 cm2.V-1.s-1 for 3. The present work should be helpful for designing and preparing novel phthalocyanine semiconductors in particular with good n-type OFET performance.


MRS Advances ◽  
2019 ◽  
Vol 4 (31-32) ◽  
pp. 1801-1809 ◽  
Author(s):  
Mangey Ram Nagar ◽  
Rohit Ashok Kumar Yadav ◽  
Deepak Kumar Dubey ◽  
Jwo-Huei Jou

ABSTRACTOrganic light emitting diodes (OLEDs) have drawn great attention owing to their potential applications in high-quality flat display panels and smart solid-state lighting. Over the last three decades, numerous approaches have been made on material design and device physics to achieve high-efficiency and long-lifespan. Herein, we report a novel tactic to employ solution-processed hybrid metal oxide, molybdenum trioxide-tungsten trioxide (MoO3:WO3), as an efficient and stable hole injection/transport (HIL/HTL) and electron blocking layer for efficient OLEDs. By using phosphorescent orange-red emitter tris(2-phenylquinoline)-iridium(III) Ir(2-phq)3, MoO3:WO3 HIL based OLED device exhibits a power efficiency of 27.7 lm W-1 and 22.9 lm W-1 at 100 and 1000 cd m-2, respectively, which are 89% and 157% higher than that of conventional OLED device consisting of poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) as an HIL. Moreover, the resulted device also displays 1.6 times lower turn-on voltage and 3.0 time higher brightness as compare to other counter part. The higher device performances of OLED device may be attributed to robust hole transporting ability, balanced charge carrier in the recombination zone and non-acidic nature of designed HIL. Our results demonstrate that a novel alternative approach based on transition metal oxide hybrid HIL/HTL as a substitute to PEDOT:PSS for high-efficiency solution process OLEDs.


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