P‐1.9: Ordered Crystalline Film Growth of Tips‐Pentacene and perovskite by Ultra‐sonic dispenser and their application as the active‐matrix of photodetectors

2019 ◽  
Vol 50 (S1) ◽  
pp. 661-661
Author(s):  
Chenning Liu ◽  
Hang Zhou ◽  
Chuan Liu
Keyword(s):  
Film Growth ◽  
Active Matrix ◽  
Crystalline Film

Compact deposition system for device-based ultrathin crystalline film growth

2009 ◽  
Vol 27 (4) ◽  
pp. 1024-1028
Author(s):  
R. E. Lake ◽  
J. R. Puls ◽  
M. P. Ray ◽  
C. E. Sosolik
Keyword(s):  
Film Growth ◽  
Crystalline Film

Crystalline film growth of TIPS-pentacene by double-shot inkjet printing technique

2014 ◽  
Vol 53 (5S3) ◽  
pp. 05HC10 ◽  
Author(s):  
Hiromi Minemawari ◽  
Toshikazu Yamada ◽  
Tatsuo Hasegawa
Keyword(s):  
Inkjet Printing ◽  
Film Growth ◽  
Crystalline Film ◽  
Printing Technique

scholarly journals Metal–organic frameworks meet polymer brushes: enhanced crystalline film growth induced by macromolecular primers

2017 ◽  
Vol 1 (11) ◽  
pp. 2256-2260 ◽  
Author(s):  
Matías Rafti ◽  
Juan A. Allegretto ◽  
Gustavo M. Segovia ◽  
Jimena S. Tuninetti ◽  
Juan M. Giussi ◽  
...  
Keyword(s):  
Polymer Brushes ◽  
Film Growth ◽  
Metal Organic Frameworks ◽  
Crystalline Film ◽  
Metal Organic

We introduce tailor-made polymeric 3D primers, which produce a striking enhancement in MOF film growth compared to traditional primers.

Droplet Manipulation by an External Electric Field for Crystalline Film Growth

Langmuir ◽  
2013 ◽  
Vol 29 (30) ◽  
pp. 9592-9597 ◽  
Author(s):  
Takeshi Komino ◽  
Hirokazu Kuwabara ◽  
Masaaki Ikeda ◽  
Masayuki Yahiro ◽  
Kazuo Takimiya ◽  
...  
Keyword(s):  
Electric Field ◽  
External Electric Field ◽  
Film Growth ◽  
Crystalline Film ◽  
Droplet Manipulation

Direct Observations of the Epitaxial Growth of Sputtered Ag on Si

1973 ◽  
Vol 31 ◽  
pp. 122-123
Author(s):  
J. S. Maa ◽  
Thos. E. Hutchinson
Keyword(s):  
Epitaxial Growth ◽  
Film Growth ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Microscopy Technique ◽  
Direct Observations ◽  
In Situ Electron Microscopy ◽  
Beam Sputtering ◽  
The Subject

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.

Microstructural characterization of YBa2Cu3O7-x thin films formed by metalorganic CVD

1991 ◽  
Vol 49 ◽  
pp. 1080-1081
Author(s):  
P. Lu ◽  
W. Huang ◽  
C.S. Chern ◽  
Y.Q. Li ◽  
J. Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Film Growth ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Ion Milling ◽  
Conventional Grinding

The YBa2Cu3O7-x thin films formed by metalorganic chemical vapor deposition(MOCVD) have been reported to have excellent superconducting properties including a sharp zero resistance transition temperature (Tc) of 89 K and a high critical current density of 2.3x106 A/cm2 or higher. The origin of the high critical current in the thin film compared to bulk materials is attributed to its structural properties such as orientation, grain boundaries and defects on the scale of the coherent length. In this report, we present microstructural aspects of the thin films deposited on the (100) LaAlO3 substrate, which process the highest critical current density.Details of the thin film growth process have been reported elsewhere. The thin films were examined in both planar and cross-section view by electron microscopy. TEM sample preparation was carried out using conventional grinding, dimpling and ion milling techniques. Special care was taken to avoid exposure of the thin films to water during the preparation processes.

The annealed (0001) α-alumina surface and its influence on thin-film growth

1995 ◽  
Vol 53 ◽  
pp. 336-337
Author(s):  
Michael W. Bench ◽  
Paul G. Kotula ◽  
C. Barry Carter
Keyword(s):  
Electron Microscopy ◽  
Surface Energy ◽  
Film Growth ◽  
Thin Film Growth ◽  
Energy Calculations ◽  
Transmission Electron ◽  
Reflection Electron Microscopy ◽  
Low Energy Electron ◽  
Surface Nature

The growth of semiconductors, superconductors, metals, and other insulators has been investigated using alumina substrates in a variety of orientations. The surface state of the alumina (for example surface reconstruction and step nature) can be expected to affect the growth nature and quality of the epilayers. As such, the surface nature has been studied using a number of techniques including low energy electron diffraction (LEED), reflection electron microscopy (REM), transmission electron microscopy (TEM), molecular dynamics computer simulations, and also by theoretical surface energy calculations. In the (0001) orientation, the bulk alumina lattice can be thought of as a layered structure with A1-A1-O stacking. This gives three possible terminations of the bulk alumina lattice, with theoretical surface energy calculations suggesting that termination should occur between the Al layers. Thus, the lattice often has been described as being made up of layers of (Al-O-Al) unit stacking sequences. There is a 180° rotation in the surface symmetry of successive layers and a total of six layers are required to form the alumina unit cell.

Direct STEM ADF imaging of gold on silicon (111)

1989 ◽  
Vol 47 ◽  
pp. 472-473
Author(s):  
P. Xu ◽  
E. J. Kirkland ◽  
J. Silcox
Keyword(s):  
Film Growth ◽  
Heavy Atom ◽  
High Vacuum ◽  
Dark Field ◽  
Thin Metal Film ◽  
Base Pressure ◽  
Ultra High Vacuum ◽  
Specimen Preparation ◽  
Dark Field Imaging ◽  
Wide Range

Many studies of thin metal film growth and the formation of metal-semiconductor contacts have been performed using a wide range of experimental methods. STEM annular dark field imaging could be an important complement since it may allow direct imaging of a single heavy atom on a thin silicon substrate. This would enable studies of the local atomic arrangements and defects in the initial stage of metal silicide formation.Preliminary experiments were performed in an ultra-high vacuum VG HB501A STEM with a base pressure of 1 × 10-10 mbar. An antechamber directly attached to the microscope for specimen preparation has a base pressure of 2×l0-10 mbar. A thin single crystal membrane was fabricated by anodic etching and subsequent reactive etching. The specimen was cleaned by the Shiraki method and had a very thin oxide layer left on the surface. 5 Å of gold was deposited on the specimen at room temperature from a tungsten filament coil monitored by a quartz crystal monitor.

Sign in / Sign up

Export Citation Format

Share Document