P‐16: Stacked PECVD SiO 2 Gate Insulators for Top‐Gate Metal Oxide Thin‐Film Transistors in Enhancement Operation Mode

2019 ◽  
Vol 50 (1) ◽  
pp. 1271-1274
Author(s):  
Sunbin Deng ◽  
Rongsheng Chen ◽  
Guijun Li ◽  
Meng Zhang ◽  
Fion Sze Yan Yeung ◽  
...  
2019 ◽  
Vol 40 (2) ◽  
pp. 228-231 ◽  
Author(s):  
Yuzhi Li ◽  
Linfeng Lan ◽  
Peixiong Gao ◽  
Penghui He ◽  
Xingqiang Dai ◽  
...  

2018 ◽  
Vol 10 (31) ◽  
pp. 25866-25870 ◽  
Author(s):  
Hong-Chih Chen ◽  
Ting-Chang Chang ◽  
Wei-Chih Lai ◽  
Guan-Fu Chen ◽  
Bo-Wei Chen ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document