P‐16: Stacked PECVD SiO
2
Gate Insulators for Top‐Gate Metal Oxide Thin‐Film Transistors in Enhancement Operation Mode
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P 16
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2020 ◽
Vol 35
(11)
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pp. 1103-1109
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2016 ◽
Vol 12
(9)
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pp. 888-891
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2021 ◽
Vol 10
(2)
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pp. 025003
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2019 ◽
Vol 40
(2)
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pp. 228-231
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2018 ◽
Vol 10
(31)
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pp. 25866-25870
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