P‐7: Highly‐Ordered Indium‐Gallium‐Zinc Oxide Thin Film Transistor via Atomic Layer Deposition Process.

2019 ◽  
Vol 50 (1) ◽  
pp. 1237-1240
Author(s):  
Hyeonjoo Seul ◽  
Hyunji Yang ◽  
Nuri On ◽  
Jae Kyeong Jeong
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Deposition Process ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
Layer Deposition ◽  
Indium Gallium

scholarly journals Effect of top gate potential on bias-stress for dual gate amorphous indium-gallium-zinc-oxide thin film transistor

AIP Advances ◽  
2016 ◽  
Vol 6 (7) ◽  
pp. 075217 ◽  
Author(s):  
Minkyu Chun ◽  
Jae Gwang Um ◽  
Min Sang Park ◽  
Md Delwar Hossain Chowdhury ◽  
Jin Jang
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
Bias Stress ◽  
Dual Gate ◽  
Gate Potential ◽  
Indium Gallium

High Performance Indium‐Gallium‐Zinc Oxide Thin Film Transistor via Interface Engineering

2020 ◽  
Vol 30 (34) ◽  
pp. 2003285 ◽  
Author(s):  
Yepin Zhao ◽  
Zhengxu Wang ◽  
Guangwei Xu ◽  
Le Cai ◽  
Tae‐Hee Han ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
High Performance ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Interface Engineering ◽  
Zinc Oxide Thin Film ◽  
Indium Gallium
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