62‐4: Late‐News Paper: Evaluation of polycrystalline silicon after Excimer laser annealing by Retardation measurement method

2019 ◽  
Vol 50 (1) ◽  
pp. 885-887
Author(s):  
Nakcho Choi ◽  
Eungtaek Kim ◽  
Kie Hyun Nam ◽  
Deokhoi Kim ◽  
Beohm Rock Choi
Keyword(s):  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Measurement Method ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Late News

Grain Enlargement of Polycrystalline Silicon by Multipulse Excimer Laser Annealing: Role of Hydrogen

2006 ◽  
Vol 45 (4A) ◽  
pp. 2726-2730 ◽  
Author(s):  
Naoya Kawamoto ◽  
Atsushi Masuda ◽  
Naoto Matsuo ◽  
Yasuhiro Seri ◽  
Toshimasa Nishimori ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Excimer Laser Annealing

Study on dopant activation of phosphorous implanted polycrystalline silicon thin films by KrF excimer laser annealing

2002 ◽  
Vol 46 (8) ◽  
pp. 1085-1090 ◽  
Author(s):  
Chang-Ho Tseng ◽  
Ching-Wei Lin ◽  
Teh-Hung Teng ◽  
Ting-Kuo Chang ◽  
Huang-Chung Cheng ◽  
...  
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Dopant Activation ◽  
Silicon Thin Films ◽  
Krf Excimer Laser

Artificial Formation of Nucleation Seed in Excimer Laser Recrystallization Of Poly-Si

1999 ◽  
Vol 558 ◽  
Author(s):  
Jae-Hong Jeon ◽  
Kee-Chan Park ◽  
Ji-Hoon Kang ◽  
Min-Cheol Lee ◽  
Min-Koo Han
Keyword(s):  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Thin Film Transistor ◽  
Excimer Laser Annealing ◽  
Laser Recrystallization ◽  
Conventional Laser ◽  
Annealing Method ◽  
Si Thin Film

ABSTARCTExcimer laser annealing method employing artificial nucleation seed is proposed to increase the grain size of polycrystalline silicon(poly-Si). We utilize Si component incorporated in aluminum(Al)-sputtering source for the nucleation seed. Si clusters which are to be used as nucleation seed are successfully formed on the substrate by deposition and etch-back of Si-incorporated Al layer. Irradiation of excimer laser on amorphous silicon(a-Si) film deposited on the substrate prepared by our method results in enlargement of poly-Si grains, compared with conventional laser recrystallization. Poly-Si thin film transistor also shows much improved electrical perfbrmance which directly reflects the quality of poly-Si film recrystallized by our method.

Aligned Polycrystalline Silicon Array Thin Film by XeCl Excimer Laser Annealing for AMOLED Displays

2007 ◽  
Vol 124-126 ◽  
pp. 371-374 ◽  
Author(s):  
C.N. Chen ◽  
G.M. Wu ◽  
W.S. Feng
Keyword(s):  
Thin Film ◽  
Energy Density ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Laser Energy ◽  
Annealing Atmosphere ◽  
Excimer Laser Annealing ◽  
Overlap Ratio ◽  
Xecl Excimer Laser

Low temperature polycrystalline silicon (LTPS) thin film transistors (TFTs) are demanded to fabricate high performance liquid crystal displays (LCD) and organic light-emitting diode displays (OLED). The mobility of poly-Si TFT can be two orders of magnitude higher than that of amorphous Si (a-Si) TFT. Excimer laser annealing has been studied to be the most promising technology to meet the stringent requirement in high speed operation. The process parameters were identified as a-Si thickness, laser energy density, overlap ratio, annealing atmosphere and pre-clean condition. The a-Si layer of 40-50 nm was deposited by plasma enhanced chemical vapor deposition (PECVD). The XeCl excimer laser was irradiated on the a-Si film at room temperature under N2 or N2/O2 environment. The energy density ranged 250-400 mJ/cm2, and the overlap ratio was 95-99%. The highly aligned poly-Si array thin film could be obtained. The grain size has been about 0.31x0.33 μm2, and the regular arrangement in poly-Si grains was discussed. In addition, the PMOS TFT has been fabricated from the aligned poly-Si array. The mobility was as high as 100 cm2/Vs and the sub-threshold swing was around 0.24 V/dec. The threshold voltage was -1.25 V and the on/off current ratio was about 106.

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