P-222L: Kim Late-News Poster: Fabrication of Nitrocellulose based Organic Material as a Gate Dielectric Layer for Oxide Thin Film Transistor

2017 ◽  
Vol 48 (1) ◽  
pp. 1356-1358
Author(s):  
Won-Gi Kim ◽  
Young Jun Tak ◽  
Yeong-gyu Kim ◽  
Jusung Chung ◽  
Byung Ha Kang ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Layer ◽  
Organic Material ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Late News

Metal Oxide Thin Film Transistor with Nano Inorganic Gate Dielectric : Material Chemistry, Nanoscience, Solution Processing and Electronics

2021 ◽  
Vol 23 (09) ◽  
pp. 1078-1085
Author(s):  
A. Kanni Raj ◽  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Gate Dielectric ◽  
Dielectric Material ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
Barium Zirconate ◽  
Operating Voltage ◽  
Metal Oxide Thin Film

Indium Lead Oxide (ILO) based Metal Oxide Thin Film Transistor (MOTFT) is fabricated with Lead Barium Zirconate (PBZ) gate dielectric. PBZ is formed over doped silicon substrate by cheap sol-gel process. Thin film PBZ is analysed with X-ray Diffraction (XRD), Ultra-Violet Visible Spectra (UV-Vis) and Atomic Force Microscope (AFM). IZO is used as bottom gate to contact Thin Film Transistor (TFT). This device needs only 5V as operating voltage, and so is good for lower electronics <40V. It shows excellent emobility 4.5cm2/V/s, with on/off ratio 5×105 and sub-threshold swing 0.35V/decade.

Low voltage operated, sol–gel derived oxide thin film transistor based on high-k Gd2O3 gate dielectric

2013 ◽  
Vol 138 (1) ◽  
pp. 1-4 ◽  
Author(s):  
Sungho Choi ◽  
Byung-Yoon Park ◽  
Sunho Jeong ◽  
Ji-Yoon Lee ◽  
Beyong-Hwan Ryu ◽  
...  
Keyword(s):  
Thin Film ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
High K

Ultra-Low Voltage Metal Oxide Thin Film Transistor by Low-Temperature Annealed Solution Processed LiAlO2 Gate Dielectric

2019 ◽  
Vol 16 (1) ◽  
pp. 22-34 ◽  
Author(s):  
Anand Sharma ◽  
Nitesh K. Chourasia ◽  
Vishwas Acharya ◽  
Nila Pal ◽  
Sajal Biring ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Metal Oxide ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Metal Oxide Thin Film

A pentacene thin film transistor with good performance using sol–gel derived SiO2 gate dielectric layer

2013 ◽  
Vol 16 ◽  
pp. 111-116 ◽  
Author(s):  
M. Cavas ◽  
Ahmed A. Al-Ghamdi ◽  
O.A. Al-Hartomy ◽  
F. El-Tantawy ◽  
F. Yakuphanoglu
Keyword(s):  
Thin Film ◽  
Dielectric Layer ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Sol Gel
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