P-221L: Late-News Poster : Indium Gallium Zinc Oxide based Phototransistor for Visible Light Detection by Stacking Solution Processed Defective Oxide Layer

2017 ◽  
Vol 48 (1) ◽  
pp. 1353-1355
Author(s):  
Young Jun Tak ◽  
Jusung Chung ◽  
Yeong-gyu Kim ◽  
Won-Gi Kim ◽  
Byung Ha Kang ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Visible Light ◽  
Oxide Layer ◽  
Indium Gallium Zinc Oxide ◽  
Light Detection ◽  
Solution Processed ◽  
Indium Gallium ◽  
Late News

Fabrication of indium gallium zinc oxide phototransistors via oxide-mesh insertion for visible light detection

2020 ◽  
Vol 8 (1) ◽  
pp. 165-172 ◽  
Author(s):  
Dongwoo Kim ◽  
Yeong-gyu Kim ◽  
Byung Ha Kang ◽  
Jin Hyeok Lee ◽  
Jusung Chung ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Visible Light ◽  
Oxygen Vacancies ◽  
Indium Gallium Zinc Oxide ◽  
Light Detection ◽  
Indium Gallium

Visible light detection of oxide phototransistors via insertion of an oxide-mesh inside the channel creating oxygen vacancies that increase subgap states.

High Photosensitive Indium–Gallium–Zinc Oxide Thin-Film Phototransistor with a Selenium Capping Layer for Visible-Light Detection

2020 ◽  
Vol 12 (9) ◽  
pp. 10673-10680 ◽  
Author(s):  
Hyukjoon Yoo ◽  
Won-Gi Kim ◽  
Byung Ha Kang ◽  
Hyung Tae Kim ◽  
Jeong Woo Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Visible Light ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
Light Detection ◽  
Capping Layer ◽  
Indium Gallium
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