42-1: Development of Cu BCE-Structure IGZO TFT for a High-ppi 31-in. 8K × 4K GOA LCD

2017 ◽  
Vol 48 (1) ◽  
pp. 592-595 ◽  
Author(s):  
Shi-Min Ge ◽  
Shan Li ◽  
Shu-Jhih Chen ◽  
Xiang-Yong Kong ◽  
Yan-Hong Meng ◽  
...  
Keyword(s):  
Igzo Tft

P‐13: IGZO‐TFT Pixel Circuits Compensating Threshold Voltage and Mobility Variations in AMOLED Displays

2021 ◽  
Vol 52 (1) ◽  
pp. 1100-1103
Author(s):  
Yingtao Xie ◽  
Penglong Chen ◽  
Kunlin Cai ◽  
Shuyun Jia ◽  
Chunyan Yang ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Igzo Tft

Reliability improvement of IGZO‐TFT in hybrid process with LTPS

2021 ◽  
Author(s):  
Mehadi Aman ◽  
Yujiro Takeda ◽  
Kazuatsu Ito ◽  
Kaoru Yamamoto ◽  
Kohei Tanaka ◽  
...  
Keyword(s):  
Hybrid Process ◽  
Reliability Improvement ◽  
Igzo Tft

scholarly journals Analytical Surface Potential-Based Compact Model for Independent Dual Gate a-IGZO TFT

2021 ◽  
Vol 68 (4) ◽  
pp. 2049-2055
Author(s):  
Jingrui Guo ◽  
Ying Zhao ◽  
Guanhua Yang ◽  
Xichen Chuai ◽  
Wenhao Lu ◽  
...  
Keyword(s):  
Surface Potential ◽  
Compact Model ◽  
Dual Gate ◽  
Igzo Tft

scholarly journals P‐1.3: Development of an 11.6‐inch 144Hz LCD Utilizing an IGZO TFT Backplane

2021 ◽  
Vol 52 (S1) ◽  
pp. 420-422
Author(s):  
Wei Chen ◽  
Jhih-Jie Huang ◽  
Yuhuai Chen ◽  
Yao Qian ◽  
Sangsang Ruan ◽  
...  
Keyword(s):  
Igzo Tft

76.2: Development of Highly Stable a-IGZO TFT with TiOx as a Passivation Layer for Active-Matrix Display

2010 ◽  
Vol 41 (1) ◽  
pp. 1132 ◽  
Author(s):  
Hyun-Sik Seo ◽  
Jong-Uk Bae ◽  
Dae-Won Kim ◽  
Chang Il Ryoo ◽  
Im-Kuk Kang ◽  
...  
Keyword(s):  
Passivation Layer ◽  
Active Matrix ◽  
Igzo Tft

scholarly journals IGZO TFT Gate Driver Circuit With Improved Output Pulse

2019 ◽  
Vol 7 ◽  
pp. 309-314 ◽  
Author(s):  
Jin-Ho Kim ◽  
Jongsu Oh ◽  
Keechan Park ◽  
Jae-Hong Jeon ◽  
Yong-Sang Kim
Keyword(s):  
Output Pulse ◽  
Driver Circuit ◽  
Gate Driver ◽  
Igzo Tft

Effect of Annealing and Gate Insulator Material Changing on the Performances of IGZO-TFT

2014 ◽  
Vol 670-671 ◽  
pp. 1467-1470
Author(s):  
Ji Feng Shi ◽  
Long Long Chen ◽  
Xiang Sun
Keyword(s):  
High Temperature ◽  
Active Layer ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Gate Insulator ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
Suitable Temperature ◽  
Igzo Tft

Indium-gallium-zinc oxide Thin Film Transistors (IGZO-TFT) were separately prepared with SiOx and SiNx/ SiOx as gate insulator,with IGZO films deposited at room-temperature by RF magnetron sputtering method as active layer.Compared with TFT with SiOx as gate insulator, The saturation mobility and the on/off ratio of TFT with SiNx/ SiOx as gate insulator were much higher. And,the threshold swing was also smaller.But,the threshold voltage was not good enough,was larger. By annealing at 200°C in the air,the saturation mobility increased from 1.42 to 7.5 cm2.V-1.S-1. While, the saturation mobility had no obvious change when TFT was annealed at high temperature. Seriously, IGZO annealed at high temperature would become crystal,it was not good for the ohmic contact between active layer and metal conductive layer,and,the interface between active layer and insulator would be deteriorated.These will result in the threshold swing become larger and the on/off ratio get smaller.200°C is a suitable temperature for annealing. So,using SiNx/ SiOx films as gate insulator,together with TFT annealing at low temperature, could improve the performances of TFT effectively.

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