76-2:Invited Paper: Amorphous Oxide Thin Film Transistors with Nitrogen-doped Active Layers

2016 ◽  
Vol 47 (1) ◽  
pp. 1033-1036 ◽  
Author(s):  
Haiting Xie ◽  
Qi Wu ◽  
Ling Xu ◽  
Jianeng Xu ◽  
Lei Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Amorphous Oxide ◽  
Nitrogen Doped ◽  
Active Layers

scholarly journals Amorphous Oxide Thin Film Transistors with Nitrogen-Doped Hetero-Structure Channel Layers

2017 ◽  
Vol 7 (10) ◽  
pp. 1099 ◽  
Author(s):  
Haiting Xie ◽  
Guochao Liu ◽  
Lei Zhang ◽  
Yan Zhou ◽  
Chengyuan Dong
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Hetero Structure ◽  
Amorphous Oxide ◽  
Nitrogen Doped ◽  
Structure Channel

scholarly journals Amorphous Oxide Thin Film Transistors with Nitrogen-Doped Hetero-Structure Channel Layers

2017 ◽  
Author(s):  
Haiting Xie ◽  
Guochao Liu ◽  
Lei Zhang ◽  
Yan Zhou ◽  
Chengyuan Dong
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Oxide Semiconductor ◽  
Oxide Thin Film ◽  
Electrical Performance ◽  
Large Field ◽  
Stress Tests ◽  
Amorphous Oxide ◽  
Nitrogen Doped ◽  
Bias Stress

The nitrogen-doped amorphous oxide semiconductor (AOS) thin film transistors (TFTs) with double-stacked channel layers (DSCL) were prepared and characterized. The DSCL structure composed of nitrogen-doped amorphous InGaZnO and InZnO films (a-IGZO:N/a-IZO:N or a-IZO:N/a-IGZO:N) made the corresponding TFT devices exhibit quite large field-effect mobility due to the existence of double conduction channels. Especially, the a-IZO:N/a-IGZO:N TFTs showed even better electrical performance (μFE = 15.0 cm2·V-1·s-1, SS = 0.5 V/dec, VTH = 1.5 V, ION/IOFF = 1.1×108) and stability (VTH shift of 1.5, -0.5, and -2.5 V for positive bias-stress, negative bias-stress and thermal stress tests, respectively) than the a-IGZO:N/a-IZO:N TFTs. Based on the X-ray photoemission spectroscopy measurements and energy band analysis, it was assumed that the optimized interface trap states, the less ambient gas adsorption, and the better suppression of oxygen vacancies in the a-IZO:N/a-IGZO:N hetero-structures might be responsible for the better behaviors of the corresponding TFTs.

scholarly journals Improving Performance of Tin-Doped-Zinc-Oxide Thin-Film Transistors by Optimizing Channel Structure

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Zhuofa Chen ◽  
Dedong Han ◽  
Xing Zhang ◽  
Yi Wang
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Channel Structure ◽  
Oxide Thin Film ◽  
Electrical Performance ◽  
Processing Temperature ◽  
Active Layers ◽  
Low Threshold ◽  
Channel Configuration

AbstractIn this paper, we investigated the performance of thin-film transistors (TFTs) with different channel configurations including single-active-layer (SAL) Sn-Zn-O (TZO), dual-active-layers (DAL) In-Sn-O (ITO)/TZO, and triple-active-layers (TAL) TZO/ITO/TZO. The TAL TFTs were found to combine the advantages of SAL TFTs (a low off-state current) and DAL TFTs (a high mobility and a low threshold voltage). The proposed TAL TFTs exhibit superior electrical performance, e.g. a high on-off state current ratio of 2 × 108, a low threshold voltage of 0.63 V, a high field effect mobility of 128.6 cm2/Vs, and a low off-state current of 3.3 pA. The surface morphology and characteristics of the ITO and TZO films were investigated and the TZO film was found to be C-axis-aligned crystalline (CAAC). A simplified resistance model was deduced to explain the channel resistance of the proposed TFTs. At last, TAL TFTs with different channel lengths were also discussed to show the stability and the uniformity of our fabrication process. Owing to its low-processing temperature, superior electrical performance, and low cost, TFTs with the proposed TAL channel configuration are highly promising for flexible displays where the polymeric substrates are heat-sensitive and a low processing temperature is desirable.

High performance oxide thin film transistors with double active layers

2008 ◽  
Author(s):  
Sun Il Kim ◽  
Chang Jung Kim ◽  
Jae Chul Park ◽  
Ihun Song ◽  
Sang Wook Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Thin Film ◽  
Active Layers
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