55-4: Large Size Quantum Dots-based Organic/inorganic Hybrid Light-emitting Devices

2016 ◽  
Vol 47 (1) ◽  
pp. 751-753
Author(s):  
Fushan Li ◽  
Qunying Zeng ◽  
Wei Wu ◽  
Hailong Hu ◽  
Jintang Lin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Inorganic Hybrid ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Large Size

Organic-inorganic hybrid thin film light-emitting devices: interfacial engineering and device physics

2021 ◽  
Author(s):  
Chunxiu Zang ◽  
Mengxin Xu ◽  
Letian Zhang ◽  
Shihao Liu ◽  
Wenfa Xie
Keyword(s):  
Thin Film ◽  
Quantum Dots ◽  
Sandwich Structure ◽  
Device Physics ◽  
Hybrid Thin Film ◽  
Inorganic Hybrid ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Interfacial Engineering ◽  
Organic Light

Thin film light-emitting devices (LEDs) with sandwich structure, such as organic light emitting devices (OLEDs), quantum dots LEDs (QLEDs) and perovskite LEDs (PeLEDs), have attracted wide attentions because of their...

Efficient organic manganese (II) bromide green-light-emitting diodes enabled by manipulating hole and electron transport layer

2021 ◽  
Author(s):  
Hyunsik Im ◽  
Atanu Jana ◽  
Vijaya Gopalan Sree ◽  
QIANKAI BA ◽  
Seong Chan Cho ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Green Light ◽  
Transport Layer ◽  
Lead Free ◽  
Electron Transport Layer ◽  
Flat Panel Displays ◽  
Flat Panel ◽  
Inorganic Hybrid ◽  
Light Emitting ◽  
Light Emitting Devices

Lead-free, non-toxic transition metal-based phosphorescent organic–inorganic hybrid (OIH) compounds are promising for next-generation flat-panel displays and solid-state light-emitting devices. In the present study, we fabricate highly efficient phosphorescent green-light-emitting diodes...

Blue and green double band luminescent carbon quantum dots: Synthesis, origin of photoluminescence, and application in white light-emitting devices

2021 ◽  
Vol 118 (15) ◽  
pp. 153102
Author(s):  
Xifang Chen ◽  
Wenhui Wu ◽  
Wenxia Zhang ◽  
Ziye Wang ◽  
Zhenjin Fu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
White Light ◽  
Carbon Quantum Dots ◽  
Light Emitting ◽  
Light Emitting Devices

Advances in Bulk Crystal Growth of AlN and GaN

MRS Bulletin ◽  
2009 ◽  
Vol 34 (4) ◽  
pp. 259-265 ◽  
Author(s):  
Dirk Ehrentraut ◽  
Zlatko Sitar
Keyword(s):  
Radius Of Curvature ◽  
Light Emitting ◽  
Bulk Crystal Growth ◽  
Light Emitting Devices ◽  
Large Size ◽  
Device Structures ◽  
Liquid Solutions ◽  
Current Growth ◽  
Lattice Matched ◽  
High Equilibrium

AbstractAluminum nitride (AlN) and gallium nitride (GaN) play an essential role in modern electronics, particularly in optoelectronics. Highly efficient light-emitting devices covering the ultraviolet to green spectral region are fabricated from these materials. Despite all efforts, the growth of large-size and high-quality AlN and GaN crystals for substrates, which are thermally and lattice-matched to the AlGaN-based device structures, is still in its infancy. This is due to the high equilibrium vapor pressure of nitrogen above these compounds, which requires growth techniques employing either the vapor phase or liquid solutions. The best commercially available GaN substrates show a high dislocation density of >105 per cm2 and strong bowing with a radius of curvature smaller than 10 m. This article reviews current growth techniques that look promising and may become commercially viable.

High-efficiency, deep blue ZnCdS/CdxZn1−xS/ZnS quantum-dot-light-emitting devices with an EQE exceeding 18%

Nanoscale ◽  
2018 ◽  
Vol 10 (12) ◽  
pp. 5650-5657 ◽  
Author(s):  
Ouyang Wang ◽  
Lei Wang ◽  
Zhaohan Li ◽  
Qiulei Xu ◽  
Qingli Lin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
High Efficiency ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Deep Blue

18% peak external quantum efficiency (EQE) for deep blue QLEDs by using ZnCdS/CdxZn1−xS/ZnS quantum dots.

scholarly journals Bright Alloy CdZnSe/ZnSe QDs with Nonquenching Photoluminescence at High Temperature and Their Application to Light-Emitting Diodes

2019 ◽  
Vol 2019 ◽  
pp. 1-8
Author(s):  
Tingting Zhang ◽  
Xugu Zhang ◽  
Peizhi Yang ◽  
Jinke Bai ◽  
Chun Chang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Temperature ◽  
Quantum Yields ◽  
Excellent Performance ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Maximum Current Density ◽  
Luminescence Efficiency ◽  
Maximum Current ◽  
Pl Quenching

Stable luminance properties are essential for light-emitting devices with excellent performance. Thermal photoluminescence (PL) quenching of quantum dots (QDs) under a high temperature resulting from a surface hole or electron traps will lead to unstable and dim brightness. After treating CdZnSe/ZnSe QDs with TBP, which is a well-known passivation reagent of the anions, the excess Se sites on the surface of the QDs were removed and their PL quantum yields (QYs) was improved remarkable. Furthermore, after TBP treatment, the CdZnSe/ZnSe QDs exhibit no quenching phenomena even at a high temperature of 310°C. The electroluminescent light-mitting diodes based on the QDs with TBP treatment also demonstrated satisfied performance with a maximum current density of 1679.6 mA/cm2, a peak luminance of 89500 cd/m2, and the maximum values of EQE and luminescence efficiency are 15% and 14.9 cd/A, respectively. The performance of the fabricated devices can be further improved providing much more in-depth studies on the CdZnSe/ZnSe QDs.

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