P-83: Oxygen Annealing Effect on Enhancement of Green Emission from ZnO Nanorods Recrystallized Growth from Sputtered ZnO Thin Film

2015 ◽  
Vol 46 (1) ◽  
pp. 1462-1464
Author(s):  
Chaoyang Li ◽  
Shengwen Hou
2018 ◽  
Vol 462 ◽  
pp. 466-470 ◽  
Author(s):  
Muhammad Abiyyu Kenichi Purbayanto ◽  
Eka Nurfani ◽  
Olga Chichvarina ◽  
Jun Ding ◽  
Andrivo Rusydi ◽  
...  

2003 ◽  
Vol 102 (1-3) ◽  
pp. 366-369 ◽  
Author(s):  
Eun Sub Shim ◽  
Hong Seong Kang ◽  
Seong Sik Pang ◽  
Jeong Seok Kang ◽  
Ilgu Yun ◽  
...  

2015 ◽  
Vol 754-755 ◽  
pp. 498-501
Author(s):  
Hyun Min Lee ◽  
Sang Hyun Kim ◽  
Jae Heon Ock ◽  
Nak Won Jang ◽  
Hong Seung Kim

In particular, the PES substrate, the crystal structure of the amorphous as well as the surface morphology is not good. So research of thin films growth for epitaxial growth by the use of a buffer layer on the amorphous PES substrate is essential. Therefore, in this study, we deposited ZnO thin-film on PES substrate, and grown ZnO nanorods at various ZnO concentrations during 1 hour. We used SEM, XRD, and HP 4145B for observe the structural and electrical characteristics of ZnO nanorods. UV-visible spectrometer was used to get the band gap and transmittance.


2021 ◽  
Vol 9 ◽  
Author(s):  
Taotao Ai ◽  
Yuanyuan Fan ◽  
Huhu Wang ◽  
Xiangyu Zou ◽  
Weiwei Bao ◽  
...  

Ag-doped ZnO nanorods growth on a PET-graphene substrate (Ag-ZnO/PET-GR) with different Ag-doped content were synthesized by low-temperature ion-sputtering-assisted hydrothermal synthesis method. The phase composition, morphologies of ZnO, and electrical properties were analyzed. Ag-doping affects the initially perpendicular growth of ZnO nanorods, resulting in oblique growth of ZnO nanorods becoming more obvious as the Ag-doped content increases, and the diameter of the nanorods decreasing gradually. The width of the forbidden band gap of the ZnO films decreases with increasing Ag-doped content. For the Ag-ZnO/PET-GR composite structure, the Ag-ZnO thin film with 5% Ag-doped content has the largest carrier concentration (8.1 × 1018 cm−3), the highest mobility (67 cm2 · V−1 · s−1), a small resistivity (0.09 Ω·cm), and impressive electrical properties.


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