Partial pressure dependency of17O/16O and18O/16O of molecular oxygen in the mass spectrometer

2003 ◽  
Vol 17 (5) ◽  
pp. 395-400 ◽  
Author(s):  
Osamu Abe ◽  
Naohiro Yoshida
2007 ◽  
Vol 556-557 ◽  
pp. 125-128 ◽  
Author(s):  
Brenda L. VanMil ◽  
Kok Keong Lew ◽  
Rachael L. Myers-Ward ◽  
Ronald T. Holm ◽  
D. Kurt Gaskill ◽  
...  

Real-time analysis of downstream nitrogen process-gas flows during 4H-SiC growth is reported. A Hiden Analytical HPR-20 quadrupole mass-spectrometer (QMS) was used to measure the process gas composition in the gas-stream of a hot-wall chemical vapor deposition (CVD) reactor. Using the 28 amu peak, it was found that the nitrogen partial pressure measured by the mass spectrometer directly correlates to the expected partial pressure of nitrogen in the process cell based on input flows. Two staircase doping samples were grown to track doping variations. The nitrogen mass flow was varied and corresponded to doping levels ranging from 1x1015 cm-3 to 8x1018 cm-3. Electron and nitrogen concentrations in the epilayers were measured by capacitancevoltage (CV) profiling and secondary ion mass spectrometry (SIMS), respectively. These efforts show real-time QMS monitoring is effective during growth for determining relative changes in nitrogen concentration in the gas flow, and thus, the level of nitrogen incorporation into the growing layer.


Vacuum ◽  
2021 ◽  
pp. 110357
Author(s):  
Dong Meng ◽  
Sun Wenjun ◽  
Wu Chengyao ◽  
Feng Tianyou ◽  
Ren Zhengyi ◽  
...  

2021 ◽  
Vol 18 ◽  
pp. 100168
Author(s):  
Dong Meng ◽  
Sun Wenjun ◽  
Wu Chengyao ◽  
Feng Tianyou ◽  
Zhang Suzhao ◽  
...  

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