MS3 using the collision cell of a tandem mass spectrometer system

2002 ◽  
Vol 16 (11) ◽  
pp. 1023-1034 ◽  
Author(s):  
Lisa M. Cousins ◽  
Bruce A. Thomson
Keyword(s):  
Mass Spectrometer ◽  
Collision Cell ◽  
Tandem Mass ◽  
Tandem Mass Spectrometer ◽  
Mass Spectrometer System ◽  
Spectrometer System

Reactive collisions in quadrupole cells. 6. H/D exchange reactions of protonated alkylbenzenes with D2O, CH3OD, and C2H5OD

1995 ◽  
Vol 73 (11) ◽  
pp. 1779-1784 ◽  
Author(s):  
Jinsong Ni ◽  
Alex. G. Harrison
Keyword(s):  
Mass Spectrometer ◽  
Alkyl Group ◽  
Collision Cell ◽  
Tandem Mass ◽  
Exchange Reactions ◽  
Deuterium Incorporation ◽  
Tandem Mass Spectrometer ◽  
Quadrupole Collision Cell ◽  
Reactive Collisions

The H/D exchange reactions occurring on collision of protonated alkylbenzenes with C2H5OD, CH3OD, and D2O at low collision energies in the quadrupole collision cell of a hybrid tandem mass spectrometer have been studied for 22 alkylbenzenes. The exchange reactions with D2O are much less efficient than the exchange reactions with C2H5OD or CH3OD; this difference is rationalized on energetics grounds. The H/D exchange of the protonated alkylbenzenes with C2H5OD or CH3OD leads, typically, to 40–70% deuterium incorporation in the protonated alkylbenzene and, for most cases, to significant ion signals corresponding to exchange of the added hydrogen and the aromatic hydrogens. Thus, the method is a feasible approach to counting the number of aromatic hydrogens in alkylbenzenes. The extent of exchange decreases with increasing size of the alkyl group in monoalkylbenzenes for reasons that are not readily understood. Keywords: protonated alkylbenzenes, H/D exchange, reactive collisions.

The Influence of Doping on the Etching of Si(111)

1986 ◽  
Vol 75 ◽  
Author(s):  
Harold F. Winters ◽  
D. Haarer
Keyword(s):  
Mass Spectrometer ◽  
Doping Level ◽  
Etch Rate ◽  
Plasma Reactors ◽  
Doping Effects ◽  
Mass Spectrometer System ◽  
Spectrometer System

AbstractIt has been recognized for some time that the doping level in silicon influences etch rate in plasma environments[1–8]. We have now been able to reproduce and investigate these doping effects in a modulated-beam, mass spectrometer system described previously [9] using XeF2 as the etchant gas. The phenomena which have been observed in plasma reactors containing fluorine atoms are also observed in our experiments. The data has led to a model which explains the major trends.

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