Matrix-enhanced secondary ion mass spectrometry: the influence of MALDI matrices on molecular ion yields of thin organic films

2005 ◽  
Vol 19 (8) ◽  
pp. 1017-1024 ◽  
Author(s):  
L. Adriaensen ◽  
F. Vangaever ◽  
J. Lenaerts ◽  
R. Gijbels
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Organic Films ◽  
Molecular Ion ◽  
Thin Organic Films ◽  
Ion Mass Spectrometry ◽  
Ion Yields ◽  
Secondary Ion

scholarly journals Enhancing Secondary Ion Yields in Time of Flight-Secondary Ion Mass Spectrometry Using Water Cluster Primary Beams

2013 ◽  
Vol 85 (12) ◽  
pp. 5654-5658 ◽  
Author(s):  
Sadia Sheraz née Rabbani ◽  
Andrew Barber ◽  
John S. Fletcher ◽  
Nicholas P. Lockyer ◽  
John C. Vickerman
Keyword(s):  
Mass Spectrometry ◽  
Water Cluster ◽  
Secondary Ion Mass Spectrometry ◽  
Time Of Flight ◽  
Ion Mass Spectrometry ◽  
Ion Yields ◽  
Secondary Ion

scholarly journals Enhancing Ion Yields in Time-of-Flight-Secondary Ion Mass Spectrometry: A Comparative Study of Argon and Water Cluster Primary Beams

2015 ◽  
Vol 87 (4) ◽  
pp. 2367-2374 ◽  
Author(s):  
Sadia Sheraz née Rabbani ◽  
Irma Berrueta Razo ◽  
Taylor Kohn ◽  
Nicholas P. Lockyer ◽  
John C. Vickerman
Keyword(s):  
Mass Spectrometry ◽  
Comparative Study ◽  
Water Cluster ◽  
Secondary Ion Mass Spectrometry ◽  
Time Of Flight ◽  
Ion Mass Spectrometry ◽  
Ion Yields ◽  
Secondary Ion

High-Precision Characterization of III-Nitride Semiconductor Alloys with Secondary Ion Mass Spectrometry (SIMS)

1995 ◽  
Vol 395 ◽  
Author(s):  
J W. Erickson ◽  
Y. Gao ◽  
R. G. Wilson
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Great Sensitivity ◽  
Common Interest ◽  
Matrix Composition ◽  
Calibration Curves ◽  
Ion Mass Spectrometry ◽  
Ion Yields ◽  
Secondary Ion ◽  
Better Than

ABSTRACTSamples of representative AlxGayIn1−x-yN compositions have been studied with secondary ion mass spectrometry (SIMS). First, ionized species of common interest (H, B, C, O, Mg, Si, and Cd) were implanted into the Ill-nitride samples to provide calibrated standards. Depth profiles and conversion factors for quantification of dopants were then obtained using O2+ or Cs+bombardment and positive or negative SIMS to measure B+ and Mg+; H−, B−, C−, O−, and Si−; and CdCs+. In addition calibration curves for quantification of stoichiometry were prepared using MCs+ ions (NCs+, AlCs−, GaCs+, InCs+) for which the ion yields are relatively independent of the matrix composition; and using atomic, dimer, and trimer ions (Al, Ga, In, Al2, Ga2, In2, Al3, Ga3) which are very sensitive to matrix composition. The empirical calibration curves show small non-linearities. Dopant concentrations can be quantified with great sensitivity (detection limits usually below 1 ppm), accuracy (usually better than 10%), and precision (better than 25%). Matrix stoichiometry can be quantified with an accuracy of about 1–3%.

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