A statistical exchange approximation for localized electrons

2009 ◽  
Vol 5 (S5) ◽  
pp. 411-420 ◽  
Author(s):  
Ingvar Lindgren
1970 ◽  
Vol 2 (3) ◽  
pp. 620-634 ◽  
Author(s):  
Timothy M. Wilson ◽  
J. H. Wood ◽  
J. C. Slater

1979 ◽  
Vol 34 (7) ◽  
pp. 901-902 ◽  
Author(s):  
K. D. Sen

Binding energies are calculated using the orbital energies within the Kohn-Sham-Gaspar statistical exchange approx­imation for the Xe and Ar isoelectronic series, respectively. The results are generally in good agreement with the available Hartree-Fock orbital energies.


1969 ◽  
Vol 22 (16) ◽  
pp. 807-811 ◽  
Author(s):  
Frank Herman ◽  
John P. Van Dyke ◽  
Irene B. Ortenburger

Author(s):  
Jun Zhu ◽  
Seulyoung Park ◽  
Oh Yeong Gong ◽  
ChangHwun Sohn ◽  
Zijia Li ◽  
...  

A large FAS2+ ion in FAPbI3 scavenges localized electrons in defects, leading to perovskite solar cell module with remarkable performance values of 18.76% (25.74 cm2) and 15.87% (65.22 cm2), respectively.


1998 ◽  
Vol 238 (3) ◽  
pp. 373-384 ◽  
Author(s):  
Alain Fritsch
Keyword(s):  

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