Variational treatment on the energy of the He-sequence ground state with weakest bound electron potential model theory

2005 ◽  
Vol 105 (1) ◽  
pp. 12-17 ◽  
Author(s):  
Dong-Xia Ma ◽  
Neng-Wu Zheng ◽  
Jing Fan
Keyword(s):  
Model Theory ◽  
Ground State ◽  
Potential Model ◽  
Variational Treatment ◽  
Bound Electron

Weakest bound electron potential model theory

2004 ◽  
Vol 98 (3) ◽  
pp. 281-290 ◽  
Author(s):  
Neng-Wu Zheng ◽  
Tao Wang ◽  
Dong-Xia Ma ◽  
Tao Zhou ◽  
Jing Fan
Keyword(s):  
Model Theory ◽  
Potential Model ◽  
Bound Electron

Rydberg energy levels and quantum defects of B II, Ge II, Si II of subgroups III and IV

2020 ◽  
Vol 98 (3) ◽  
pp. 274-286
Author(s):  
Ejaz Ahmed ◽  
Salman Raza ◽  
M. Noman Hameed ◽  
Muhammad Farooq ◽  
Jehan Akbar
Keyword(s):  
Model Theory ◽  
Good Accuracy ◽  
Potential Model ◽  
Energy Levels ◽  
Rydberg States ◽  
Theoretical Computation ◽  
Quantum Defects ◽  
First Time ◽  
Bound Electron

Theoretical computations of Rydberg energy levels series and atomic lifetimes for singly ionized boron (B II), silicon (Si II), and germanium (Ge II) have been performed. In the theoretical computation weakest bound electron potential model theory (WBEPMT) is employed. Regularities of changes in quantum defects for the following Rydberg states series: 2sns (1S0), 2snp ([Formula: see text]), 2snf ([Formula: see text], [Formula: see text], [Formula: see text]), 2snf ([Formula: see text]) of B II; 3s2ns (2S1/2), 3s2nd (2D3/2,5/2), 3s2nf ([Formula: see text]), 3s2ng (2G7/2,9/2) of Si II; and 4s2nf ([Formula: see text]), 4s2nf ([Formula: see text]), 4s2ng (2G7/2,9/2) of Ge II, up to n = 50 are presented. The atomic lifetimes of the following series: 1s22sns (1S0), 1s22snp ([Formula: see text]), 1s22snd (1D2) of B II; 3s2ns (2S1/2), 3s2nf ([Formula: see text]) of Si II; and 4s2ns (2S1/2) of Ge II are predicted with good accuracy. Some high-lying Rydberg energy levels and atomic lifetimes have been presented for the first time. The series for which Rydberg energy levels are computed in this work are unperturbed series.

scholarly journals Calculation of the Rydberg Energy Levels for Francium Atom

2010 ◽  
Vol 2010 ◽  
pp. 1-5
Author(s):  
Huang Shizhong ◽  
Sun Qiufeng
Keyword(s):  
Excited States ◽  
Excellent Agreement ◽  
Model Theory ◽  
Potential Model ◽  
Energy Levels ◽  
Absolute Difference ◽  
Quantum Defects ◽  
The Absolute ◽  
Bound Electron

Based on the weakest bound electron potential model theory, the Rydberg energy levels and quantum defects of nsS21/2(n=8--50), ndD23/2(n=6--50), and ndD25/2(n=6--50) spectrum series for francium atom are calculated. The calculated results are in excellent agreement with the 74 known experimentally measured levels (the absolute difference is less than 0.03 cm-1) and 58 energy levels for highly excited states are predicted.

Lifetimes for singly ionized nitrogen

2014 ◽  
Vol 92 (1) ◽  
pp. 82-85 ◽  
Author(s):  
Murat Yıldız ◽  
Yasin Gökçe
Keyword(s):  
Model Theory ◽  
Potential Model ◽  
Wave Functions ◽  
Quantum Defect ◽  
Orbital Theory ◽  
Expectation Values ◽  
Hartree Fock ◽  
First Time ◽  
Bound Electron

The lifetimes of some excited levels for singly ionized nitrogen are calculated by using the weakest bound electron potential model theory and quantum defect orbital theory. We determined expectation values of radii using numerical nonrelativistic Hartree–Fock wave functions. The necessary energy values have been taken from NIST. The present results have been compared with previous calculations and experiments. Most of the lifetime results are presented for the first time in the present work. For N II, because there are few lifetime results available in the literature, the present study compared to existing investigations, provides detailed results for the lifetimes of several of the excited 2s22pns, 2s22pnp, and 2s22pd → 2s22p2 where, n = 3–6 for the ns series, n = 3–5 for the nd series and n = 3–4 for the np series.

Theoretical study of energy levels of atomic Ga

2004 ◽  
Vol 82 (7) ◽  
pp. 523-529 ◽  
Author(s):  
N W Zheng ◽  
Z Li ◽  
D Ma ◽  
T Zhou ◽  
J Fan
Keyword(s):  
Model Theory ◽  
Valence Electron ◽  
Potential Model ◽  
Theoretical Study ◽  
Energy Levels ◽  
Rydberg States ◽  
Electron System ◽  
Gallium Atom ◽  
The Many ◽  
Bound Electron

There are few documented values of the energy levels of the gallium atom. The values in some series remain blank and some series have no values in high Rydberg states. In this paper, based on the weakest bound electron potential model theory we treat the many-valence electron system of the excited gallium atom as a single-electron system of the weakest bound electron and use Martin's expression to determine the parameters. Most of the results are satisfying with deviations less than 1 cm–1 compared with the documented values in the National Institute of Standards and Technology. In addition, we fill many blanks in some high Rydberg energy levels of the gallium atom. PACS Nos.: 31.15.Ct, 32.10.Fn

Analysis of the bound odd-parity spectrum of krypton by weakest bound electron potential model theory

2000 ◽  
Vol 258 (1) ◽  
pp. 37-46 ◽  
Author(s):  
Neng Wu Zheng ◽  
Tao Zhou ◽  
Ruyi Yang ◽  
Tao Wang ◽  
Dongxia Ma
Keyword(s):  
Model Theory ◽  
Potential Model ◽  
Bound Electron
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