scholarly journals Topological nature of in-gap bound states in disordered large-gap monolayer transition metal dichalcogenides

2016 ◽  
Vol 10 (5) ◽  
pp. 409-414 ◽  
Author(s):  
Fanyao Qu ◽  
L. Villegas-Lelovsky ◽  
G. S. Diniz
Keyword(s):  
Transition Metal ◽  
Bound States ◽  
Transition Metal Dichalcogenides ◽  
Metal Dichalcogenides

scholarly journals Valley excitons in two-dimensional semiconductors

2015 ◽  
Vol 2 (1) ◽  
pp. 57-70 ◽  
Author(s):  
Hongyi Yu ◽  
Xiaodong Cui ◽  
Xiaodong Xu ◽  
Wang Yao
Keyword(s):  
Transition Metal ◽  
Bound States ◽  
Degrees Of Freedom ◽  
Transition Metal Dichalcogenides ◽  
Visible Range ◽  
Two Dimensional ◽  
New Class ◽  
Strong Coulomb ◽  
Metal Dichalcogenides ◽  
Direct Band

Abstract Monolayer group-VIB transition-metal dichalcogenides have recently emerged as a new class of semiconductors in the two-dimensional limit. The attractive properties include the visible range direct band gap ideal for exploring optoelectronic applications; the intriguing physics associated with spin and valley pseudospin of carriers which implies potentials for novel electronics based on these internal degrees of freedom; the exceptionally strong Coulomb interaction due to the two-dimensional geometry and the large effective masses. The physics of excitons, the bound states of electrons and holes, has been one of the most actively studied topics on these two-dimensional semiconductors, where the excitons exhibit remarkably new features due to the strong Coulomb binding, the valley degeneracy of the band edges and the valley-dependent optical selection rules for interband transitions. Here, we give a brief overview of the experimental and theoretical findings on excitons in two-dimensional transition-metal dichalcogenides, with focus on the novel properties associated with their valley degrees of freedom.

scholarly journals Super-resolved Optical Mapping of Reactive Sulfur-Vacancies in Two-Dimensional Transition Metal Dichalcogenides

ACS Nano ◽  
2021 ◽  
Author(s):  
Miao Zhang ◽  
Martina Lihter ◽  
Tzu-Heng Chen ◽  
Michal Macha ◽  
Archith Rayabharam ◽  
...  
Keyword(s):  
Transition Metal ◽  
Optical Mapping ◽  
Transition Metal Dichalcogenides ◽  
Two Dimensional ◽  
Metal Dichalcogenides

Highly electroconductive and uniform WS2 film growth by sulfurization of W film using diethyl sulfide

2021 ◽  
Author(s):  
Yoobeen Lee ◽  
Jin Won Jung ◽  
Jin Seok Lee
Keyword(s):  
Transition Metal ◽  
Grain Boundaries ◽  
High Performance ◽  
Film Growth ◽  
Transition Metal Dichalcogenides ◽  
Electronic Systems ◽  
Intrinsic Defects ◽  
Diethyl Sulfide ◽  
Metal Dichalcogenides

The reduction of intrinsic defects, including vacancies and grain boundaries, remains one of the greatest challenges to produce high-performance transition metal dichalcogenides (TMDCs) electronic systems. A deeper comprehension of the...

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