A RHEED investigation of self-assembled GaN nanowire nucleation dynamics on bare Si and on Si covered with a thin AlN buffer layer

2013 ◽  
Vol 7 (10) ◽  
pp. 835-839 ◽  
Author(s):  
Karine Hestroffer ◽  
Bruno Daudin
Keyword(s):  
Buffer Layer ◽  
Gan Nanowire ◽  
Self Assembled ◽  
Aln Buffer

scholarly journals The influence of AlN buffer layer on the growth of self-assembled GaN nanocolumns on graphene

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Andreas Liudi Mulyo ◽  
Mohana K. Rajpalke ◽  
Per Erik Vullum ◽  
Helge Weman ◽  
Katsumi Kishino ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Self Assembled ◽  
Aln Buffer

scholarly journals Improved Performance of GaN-Based Light-Emitting Diodes Grown on Si (111) Substrates with NH3 Growth Interruption

Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 399
Author(s):  
Sang-Jo Kim ◽  
Semi Oh ◽  
Kwang-Jae Lee ◽  
Sohyeon Kim ◽  
Kyoung-Kook Kim
Keyword(s):  
Buffer Layer ◽  
Light Emitting Diodes ◽  
Defect Density ◽  
Strain Relaxation ◽  
Multiple Quantum Well ◽  
Light Output ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Growth Interruption ◽  
Aln Buffer

We demonstrate the highly efficient, GaN-based, multiple-quantum-well light-emitting diodes (LEDs) grown on Si (111) substrates embedded with the AlN buffer layer using NH3 growth interruption. Analysis of the materials by the X-ray diffraction omega scan and transmission electron microscopy revealed a remarkable improvement in the crystalline quality of the GaN layer with the AlN buffer layer using NH3 growth interruption. This improvement originated from the decreased dislocation densities and coalescence-related defects of the GaN layer that arose from the increased Al migration time. The photoluminescence peak positions and Raman spectra indicate that the internal tensile strain of the GaN layer is effectively relaxed without generating cracks. The LEDs embedded with an AlN buffer layer using NH3 growth interruption at 300 mA exhibited 40.9% higher light output power than that of the reference LED embedded with the AlN buffer layer without NH3 growth interruption. These high performances are attributed to an increased radiative recombination rate owing to the low defect density and strain relaxation in the GaN epilayer.

The Effect of the Thickness of the Low Temperature AlN Nucleation Layer on the Material Properties of GaN Grown on a Double-Step AlN Buffer Layer by the MOCVD Method

2015 ◽  
Vol 45 (2) ◽  
pp. 859-866 ◽  
Author(s):  
Wei-Ching Huang ◽  
Chung-Ming Chu ◽  
Chi-Feng Hsieh ◽  
Yuen-Yee Wong ◽  
Kai-wei Chen ◽  
...  
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Material Properties ◽  
Double Step ◽  
Nucleation Layer ◽  
Aln Buffer

The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor

2019 ◽  
Vol 217 (7) ◽  
pp. 1900694
Author(s):  
Uiho Choi ◽  
Donghyeop Jung ◽  
Kyeongjae Lee ◽  
Taemyung Kwak ◽  
Taehoon Jang ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Double Heterostructure ◽  
Aln Buffer

Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate Using AlN as a Buffer Layer

2008 ◽  
Vol 600-603 ◽  
pp. 251-254 ◽  
Author(s):  
Yong Mei Zhao ◽  
Guo Sheng Sun ◽  
Xing Fang Liu ◽  
Jia Ye Li ◽  
Wan Shun Zhao ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Chemical Vapor ◽  
Heteroepitaxial Growth ◽  
Si Substrate ◽  
Si Substrates ◽  
Good Crystallinity ◽  
Aln Film ◽  
Pressure Chemical ◽  
Aln Buffer ◽  
Sic Film

Using AlN as a buffer layer, 3C-SiC film has been grown on Si substrate by low pressure chemical vapor deposition (LPCVD). Firstly growth of AlN thin films on Si substrates under varied V/III ratios at 1100oC was investigated and the (002) preferred orientational growth with good crystallinity was obtained at the V/III ratio of 10000. Annealing at 1300oC indicated the surface morphology and crystallinity stability of AlN film. Secondly the 3C-SiC film was grown on Si substrate with AlN buffer layer. Compared to that without AlN buffer layer, the crystal quality of the 3C-SiC film was improved on the AlN/Si substrate, characterized by X-ray diffraction (XRD) and Raman measurements.

Effects of the Sputtering Time of AlN Buffer Layer on the Quality of ZnO Thin Films

2014 ◽  
Vol 881-883 ◽  
pp. 1117-1121 ◽  
Author(s):  
Xiang Min Zhao
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering ◽  
Buffer Layers ◽  
Zno Thin Films ◽  
Zno Films ◽  
Si Substrates ◽  
Atomic Force ◽  
Structure Morphology ◽  
Aln Buffer

ZnO thin films with different thickness (the sputtering time of AlN buffer layers was 0 min, 30 min,60 min, and 90 min, respectively) were prepared on Si substrates using radio frequency (RF) magnetron sputtering system.X-ray diffraction (XRD), atomic force microscope (AFM), Hall measurements setup (Hall) were used to analyze the structure, morphology and electrical properties of ZnO films.The results show that growth are still preferred (002) orientation of ZnO thin films with different sputtering time of AlN buffer layer,and for the better growth of ZnO films, the optimal sputtering time is 60 min.

From nucleation to growth of catalyst-free GaN nanowires on thin AlN buffer layer

2007 ◽  
Vol 91 (25) ◽  
pp. 251902 ◽  
Author(s):  
R. Songmuang ◽  
O. Landré ◽  
B. Daudin
Keyword(s):  
Buffer Layer ◽  
Gan Nanowires ◽  
Catalyst Free ◽  
Aln Buffer

Growth and characterization of GaN films on Si(111) substrate using high-temperature AlN buffer layer

2005 ◽  
Vol 198 (1-3) ◽  
pp. 350-353 ◽  
Author(s):  
Xianfeng Ni ◽  
Liping Zhu ◽  
Zhizhen Ye ◽  
Zhe Zhao ◽  
Haiping Tang ◽  
...  
Keyword(s):  
High Temperature ◽  
Buffer Layer ◽  
Aln Buffer

AlN buffer layer growth for GaN epitaxy on (111) Si: Al or N first?

2009 ◽  
Vol 311 (12) ◽  
pp. 3278-3284 ◽  
Author(s):  
A. Le Louarn ◽  
S. Vézian ◽  
F. Semond ◽  
J. Massies
Keyword(s):  
Buffer Layer ◽  
Layer Growth ◽  
Aln Buffer

ZnO nanorod arrays grown on an AlN buffer layer and their enhanced ultraviolet emission

CrystEngComm ◽  
2017 ◽  
Vol 19 (41) ◽  
pp. 6085-6088 ◽  
Author(s):  
Amany Ali ◽  
DongBo Wang ◽  
JinZhong Wang ◽  
ShuJie Jiao ◽  
FengYun Guo ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Zno Nanorods ◽  
Zno Nanorod ◽  
Nanorod Arrays ◽  
Zno Nanorod Arrays ◽  
Ultraviolet Emission ◽  
Aln Buffer

The ultraviolet luminescence of ZnO nanorods was greatly enhanced through introducing an AlN buffer layer.

Sign in / Sign up

Export Citation Format

Share Document