Low temperature dependence of elastic moduli and internal friction for the glassy alloy Zr55 Cu30 Al10 Ni5

2007 ◽  
Vol 1 (5) ◽  
pp. 220-222 ◽  
Author(s):  
Mikio Fukuhara ◽  
Xinmin Wang ◽  
Akihisa Inoue ◽  
Fuxing Yin
2008 ◽  
Vol 103 (1) ◽  
pp. 013503 ◽  
Author(s):  
M. Fukuhara ◽  
A. Kawashima ◽  
W. Zhang ◽  
A. Inoue ◽  
F. Yin

2013 ◽  
Vol 738-739 ◽  
pp. 183-186 ◽  
Author(s):  
Galina Viktorovna Markova ◽  
Ekaterina Sergeevna Klyueva

The temperature and amplitude dependence of internal friction fcc Mn45Cu55 alloy aged at 400 °C were studied. Two low-temperature internal friction peak observed in the quenched state. Physical mechanism of the peaks was determined by the effect of frequency and strain amplitude on the temperature dependence of internal friction. The influence of the heat treatment to the internal friction of the investigated alloy was shown.


1979 ◽  
Vol 28 (312) ◽  
pp. 852-856 ◽  
Author(s):  
Yoichiro TAKEUCHI ◽  
Naotake NODA ◽  
Shigeru KOMORI ◽  
Takuo YAMATO

1971 ◽  
Vol 32 (C2) ◽  
pp. C2-209-C2-213 ◽  
Author(s):  
E. J. SAVINO ◽  
E. A. BISOGNI

2002 ◽  
Author(s):  
Xiao Liu ◽  
D. M. Photiadis ◽  
J. A. Bucaro ◽  
J. F. Vignola ◽  
B. H. Houston ◽  
...  

1996 ◽  
Vol 442 ◽  
Author(s):  
J.-M. Spaeth ◽  
S. Greulich-Weber ◽  
M. März ◽  
E. N. Kalabukhova ◽  
S. N. Lukin

AbstractThe electronic structure of nitrogen donors in 6H-, 4H- and 3C-SiC is investigated by measuring the nitrogen hyperfine (hf) interactions with electron nuclear double resonance (ENDOR) and the temperature dependence of the hf split electron paramagnetic resonance (EPR) spectra. Superhyperfine (shf) interactions with many shells of 13C and 29Si were measured in 6H-SiC. The hf and shf interactions are discussed in the framework of effective mass theory. The temperature dependence is explained with the thermal occupation of the lowest valley-orbit split A1 and E states. It is proposed that the EPR spectra of P donors observed previously in neutron transmuted 6H-SiC at low temperature (<10K) and high temperature (>60K) are all due to substitutional P donors on the two quasi-cubic and hexagonal Si sites, whereby at low temperature the E state is occupied and at high temperature the A1 state. The low temperature spectra are thus thought not to be due to P-vacancy pair defects as proposed previously.


2012 ◽  
Vol 184 ◽  
pp. 416-421 ◽  
Author(s):  
H. Mizubayashi ◽  
I. Sakata ◽  
H. Tanimoto

For hydrogenated amorphous silicon (a-Si:H) films deposited at temperatures between 423 K and 623 K (a-Si:H423Kand so on), the light-induced changes in the internal friction between 80 K and 400 K were studied. The internal friction is associated with H2motion in microvoid networks, and shows the mild temperature dependence between about 80 K and 300 K (Q-180-300K) and the almost linear increase above 300 K (Q-1>300K). BothQ-180-300KandQ-1>300Kdecrease with increasing the deposition temperature, and show the mild temperature dependence ina-Si:H623K. The white light soaking with 100 mW/cm2(WLS100and so on) below 300 K caused a change inQ-180-300Kand no changes inQ-1>300K, respectively, and the light-induced changes inQ-180-300Krecovered after annealing at 423 K. The wide distribution of activation energies for H2motions between microvoids indicate that most of neighboring microvoids are connected through windows, i.e., the microvoid networks are existing ina-Si:H, and the spatially loose or solid structures are responsible for the low or high activation energies for the H2motion between microvoids, respectively. Furthermore, the light-induced hydrogen evolution (LIHE) was observed for WLS200to WLS400in a vacuum between 400 and 500 K, resulting in the disappearance of the internal friction due to the H2motion in the microvoid network.


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