scholarly journals Electron beam modification of vanadium dioxide oscillators

2016 ◽  
Author(s):  
Maksim Belyaev ◽  
Andrey Velichko ◽  
Vadim Putrolaynen ◽  
Valentin Perminov ◽  
Alexander Pergament
Keyword(s):  
Electron Beam ◽  
Vanadium Dioxide

Electron-beam deposition of vanadium dioxide thin films

2012 ◽  
Vol 111 (3) ◽  
pp. 975-981 ◽  
Author(s):  
R. E. Marvel ◽  
K. Appavoo ◽  
B. K. Choi ◽  
J. Nag ◽  
R. F. Haglund
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Vanadium Dioxide ◽  
Electron Beam Deposition ◽  
Vanadium Dioxide Thin Films ◽  
Beam Deposition

Electron-beam modification of the parameters of the insulator-metal phase transition in vanadium dioxide films

2013 ◽  
Vol 39 (8) ◽  
pp. 705-708 ◽  
Author(s):  
A. V. Il’inskii ◽  
V. Yu. Davydov ◽  
R. A. Kastro ◽  
O. E. Kvashenkina ◽  
M. E. Pashkevich ◽  
...  
Keyword(s):  
Phase Transition ◽  
Electron Beam ◽  
Vanadium Dioxide ◽  
Metal Phase ◽  
Metal Phase Transition

Electron-beam modification and electrical property recovery dynamics of vanadium dioxide films in semiconducting and metallic phases

2015 ◽  
Vol 54 (5) ◽  
pp. 051102 ◽  
Author(s):  
Maksim A. Belyaev ◽  
Andrey A. Velichko ◽  
Samuil D. Khanin ◽  
Genrikh B. Stefanovich ◽  
Valery A. Gurtov ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electrical Property ◽  
Vanadium Dioxide ◽  
Recovery Dynamics

AMORPHOUS VANADIUM DIOXIDE: THE RESIST FOR ELECTRON-BEAM LITHOGRAPHY

2018 ◽  
Vol 25 (06) ◽  
pp. 1850118
Author(s):  
GENRIKH STEFANOVICH ◽  
ANDREY VELICHKO ◽  
ALEXANDER PERGAMENT ◽  
PETER BORISKOV
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Vanadium Dioxide ◽  
Ion Irradiation ◽  
Review Article ◽  
Electronic Industry ◽  
Detailed Review ◽  
Nanoscale Structures ◽  
Highly Sensitive ◽  
Vanadium Dioxide Thin Films

Amorphous vanadium dioxide, in combination with the resist properties, allowing one to create nanoscale structures, and with the effects of electrical switching and memory, should be in demand by the electronic industry. The opportunity to prepare highly sensitive to electron beam, optical and ion irradiation oxide films of vanadium by vacuum methods allows hope for simplified methods for coating and developing resists based on vanadium oxides. The scope of this review article is indicated by its title, namely, it encompasses the authors’ experimental results and model approximations on electron-beam modification of vanadium dioxide thin films and application of these films as inorganic nanolithography resists. These findings have been earlier published in a number of scattered original papers, and here we unite them all in one detailed review supplementing with new, previously unpublished data.

Techniques for Transmission Electron Microscopy of Fiber-Matrix Interfaces in Aluminum Alloy-Boron Composites by Ion Erosio

1971 ◽  
Vol 29 ◽  
pp. 204-205
Author(s):  
G. G. Shaw
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Aluminum Alloy ◽  
Electron Beam ◽  
Pure Aluminum ◽  
Ion Milling ◽  
Transmission Electron ◽  
Fiber Matrix ◽  
Ion Erosion ◽  
Row Of Fibers

The morphology and composition of the fiber-matrix interface can best be studied by transmission electron microscopy and electron diffraction. For some composites satisfactory samples can be prepared by electropolishing. For others such as aluminum alloy-boron composites ion erosion is necessary.When one wishes to examine a specimen with the electron beam perpendicular to the fiber, preparation is as follows: A 1/8 in. disk is cut from the sample with a cylindrical tool by spark machining. Thin slices, 5 mils thick, containing one row of fibers, are then, spark-machined from the disk. After spark machining, the slice is carefully polished with diamond paste until the row of fibers is exposed on each side, as shown in Figure 1.In the case where examination is desired with the electron beam parallel to the fiber, preparation is as follows: Experimental composites are usually 50 mils or less in thickness so an auxiliary holder is necessary during ion milling and for easy transfer to the electron microscope. This holder is pure aluminum sheet, 3 mils thick.

Temperature Dependence of the Critical Electron Dose for Fatty Acid Monolayers

1982 ◽  
Vol 40 ◽  
pp. 78-79
Author(s):  
Kenneth H. Downing ◽  
Robert M. Glaeser
Keyword(s):  
Electron Beam ◽  
Fatty Acid ◽  
Inelastic Scattering ◽  
Temperature Dependence ◽  
Structural Damage ◽  
Direct Result ◽  
Second Step ◽  
Strong Temperature Dependence ◽  
Electron Dose ◽  
Covalent Bonds

The structural damage of molecules irradiated by electrons is generally considered to occur in two steps. The direct result of inelastic scattering events is the disruption of covalent bonds. Following changes in bond structure, movement of the constituent atoms produces permanent distortions of the molecules. Since at least the second step should show a strong temperature dependence, it was to be expected that cooling a specimen should extend its lifetime in the electron beam. This result has been found in a large number of experiments, but the degree to which cooling the specimen enhances its resistance to radiation damage has been found to vary widely with specimen types.

Lithography below 100 nm

1983 ◽  
Vol 41 ◽  
pp. 96-99
Author(s):  
L. D. Jackel
Keyword(s):  
Spatial Distribution ◽  
Electron Beam ◽  
Electron Scattering ◽  
Electron Beam Lithography ◽  
Substrate Material ◽  
Local Electron ◽  
Electron Dose ◽  
Positive Resist ◽  
Exposure Process

Most production electron beam lithography systems can pattern minimum features a few tenths of a micron across. Linewidth in these systems is usually limited by the quality of the exposing beam and by electron scattering in the resist and substrate. By using a smaller spot along with exposure techniques that minimize scattering and its effects, laboratory e-beam lithography systems can now make features hundredths of a micron wide on standard substrate material. This talk will outline sane of these high- resolution e-beam lithography techniques.We first consider parameters of the exposure process that limit resolution in organic resists. For concreteness suppose that we have a “positive” resist in which exposing electrons break bonds in the resist molecules thus increasing the exposed resist's solubility in a developer. Ihe attainable resolution is obviously limited by the overall width of the exposing beam, but the spatial distribution of the beam intensity, the beam “profile” , also contributes to the resolution. Depending on the local electron dose, more or less resist bonds are broken resulting in slower or faster dissolution in the developer.

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