Spatially arranged chains of Ge quantum dots grown on Si substrate prepatterned by ion-beam-assisted nanoimprint lithography

2016 ◽  
Vol 13 (10-12) ◽  
pp. 882-885 ◽  
Author(s):  
Anatoly Dvurechenskii ◽  
Zhanna Smagina ◽  
Pavel Novikov ◽  
Vladimir Zinovyev ◽  
Polina Kuchinskaya ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Nanoimprint Lithography ◽  
Ion Beam ◽  
Si Substrate ◽  
Ge Quantum Dots

Advance in the Growth of Ordered Ge/Si Quantum Dots

2013 ◽  
Vol 320 ◽  
pp. 168-175
Author(s):  
Hai Peng Wang ◽  
Chong Wang ◽  
Jie Yu ◽  
Jie Yang ◽  
Yu Yang
Keyword(s):  
Quantum Dots ◽  
Nanoimprint Lithography ◽  
Ion Beam ◽  
Ultra Violet ◽  
Interference Lithography ◽  
Ion Beam Irradiation ◽  
Preparation Methods ◽  
Patterned Substrate ◽  
Si Quantum Dots ◽  
Lithography Technology

Recent progress in the growth of ordered Ge/Si quantum dots (QDs) is reviewed. We focus on the detailed progresses of the Ge/Si multiple layers QDs and the preparation of Ge/Si QDs by ion beam irradiation. In addition, the growth of Ge/Si QDs on patterned substrate by using different preparation methods are also well discussed, such as nanosphere lithography technology, extreme ultra-violet interference lithography technology, nanoimprint lithography technology, etc.

Densely packed Ge quantum dots grown on SiO2/Si substrate

2009 ◽  
Vol 256 (3) ◽  
pp. 768-772 ◽  
Author(s):  
L. Zhang ◽  
H. Ye ◽  
Y.R. Huangfu ◽  
C. Zhang ◽  
X. Liu
Keyword(s):  
Quantum Dots ◽  
Si Substrate ◽  
Ge Quantum Dots

scholarly journals Ion Synthesis: Si-Ge Quantum Dots

2018 ◽  
Vol 52 (5) ◽  
pp. 516
Author(s):  
N.N. Gerasimenko ◽  
N.S. Balakleyskiy ◽  
A.D. Volokhovskiy ◽  
D.I. Smirnov ◽  
O.A. Zaporozhan
Keyword(s):  
Quantum Dots ◽  
High Temperature ◽  
Temperature Region ◽  
Ion Beam ◽  
Self Organization ◽  
High Temperature Annealing ◽  
Ion Energies ◽  
Ion Beam Implantation ◽  
Ge Quantum Dots

AbstractWe present a method of Si–Ge QDs formation by ion beam implantation (IBI) technique and high temperature annealing for self-organization. Implantation doses varied from 10^14 to 10^17 cm^–2, ion energies ranged from 50 to 150 keV, annealing proceeded at temperature of 950 to 1050°C in argon environment. Formed QDs show strong infrared (IR) photoluminescence (PL) in the temperature region 15–250 K.

scholarly journals Underlying strain-induced growth of the self-assembled Ge quantum-dots prepared by ion beam sputtering deposition

2012 ◽  
Vol 61 (1) ◽  
pp. 016804
Author(s):  
Yang Jie ◽  
Wang Chong ◽  
Jin Ying-Xia ◽  
Li Liang ◽  
Tao Dong-ping ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Ion Beam ◽  
The Self ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Beam Sputtering ◽  
Ge Quantum Dots ◽  
Self Assembled

Pattern level assembly of Ge quantum dots on Si with focused ion beam templating

2008 ◽  
Vol 93 (2) ◽  
pp. 023106 ◽  
Author(s):  
M. Gherasimova ◽  
R. Hull ◽  
M. C. Reuter ◽  
F. M. Ross
Keyword(s):  
Quantum Dots ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ge Quantum Dots

scholarly journals Investigation of GeSn/Ge quantum dots’ optical transitions for integrated optics on Si substrate

2019 ◽  
Vol 12 ◽  
pp. 1732-1736 ◽  
Author(s):  
Mourad Baira ◽  
Maha Aljaghwani ◽  
Bassem Salem ◽  
Niyaz Ahmad Madhar ◽  
Bouraoui Ilahi
Keyword(s):  
Quantum Dots ◽  
Integrated Optics ◽  
Optical Transitions ◽  
Si Substrate ◽  
Ge Quantum Dots

Formation of Ge quantum dots on Si substrate using consecutive deposition of Ge/C and in situ post annealing

2014 ◽  
Vol 125 ◽  
pp. 28-32 ◽  
Author(s):  
Shinji Hatakeyama ◽  
Yuhki Itoh ◽  
Tomoyuki Kawashima ◽  
Katsuyoshi Washio
Keyword(s):  
Quantum Dots ◽  
Si Substrate ◽  
Post Annealing ◽  
Ge Quantum Dots

Direct growth of Ge quantum dots on a graphene/SiO2/Si structure using ion beam sputtering deposition

2016 ◽  
Vol 27 (30) ◽  
pp. 305601 ◽  
Author(s):  
Z Zhang ◽  
R F Wang ◽  
J Zhang ◽  
H S Li ◽  
J Zhang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Beam Sputtering ◽  
Direct Growth ◽  
Ge Quantum Dots
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