Challenges for Group III Nitride Semiconductors for Solid State Lighting and Beyond

2015 ◽  
Vol 12 (4-5) ◽  
pp. 451-451
Keyword(s):  
Solid State ◽  
Solid State Lighting ◽  
Nitride Semiconductors ◽  
Group Iii ◽  
Group Iii Nitride

Group III-Nitride Based Electronic and Optoelectronic Integrated Circuits for Smart Lighting Applications

2013 ◽  
Vol 1492 ◽  
pp. 123-128 ◽  
Author(s):  
J. Justice ◽  
A. Kadiyala ◽  
J. Dawson ◽  
D. Korakakis
Keyword(s):  
United States ◽  
Gallium Nitride ◽  
Solid State ◽  
Integrated Circuits ◽  
The United States ◽  
Solid State Lighting ◽  
Group Iii ◽  
Smart Lighting ◽  
Optoelectronic Integrated Circuits ◽  
Group Iii Nitride

ABSTRACTWith general lighting applications being responsible for over 20% of the energy consumption in the United States, advances in solid-state lighting have the potential for considerable energy and cost savings. The United States Department of Energy predicts that the increased use of solid state lighting will result in a 46% lighting consumption energy savings by the year 2030. Smart lighting systems have the potential for reducing energy costs while also providing a means for short distance data transmission via free space optics. The group III-nitride (III-N) family of materials, including aluminum nitride (AlN), gallium nitride (GaN), indium nitride (InN), their binary and ternary alloys, are uniquely situated to provide light emitting diodes (LEDs) across the full visible spectrum, photodetectors (PDs) and high power, high speed transistors. In this work, aluminum gallium nitride (AlGaN) / GaN high electron mobility transistors (HEMTs) and indium gallium nitride (InGaN) photodiodes (PDs) are fabricated and characterized. HEMTs and LEDs (or PDs) are grown on the same substrate for the purpose of creating electronic and optoelectronic integrated circuits.

scholarly journals MOCVD synthesis of group III-nitride heterostructure nanowires for solid-state lighting.

2006 ◽  
Author(s):  
George T Wang ◽  
James Randall Creighton ◽  
Albert Alec Talin
Keyword(s):  
Solid State ◽  
Solid State Lighting ◽  
Group Iii ◽  
Group Iii Nitride

Spatio-time-resolved cathodoluminescence studies of wide-bandgap group-III nitride semiconductors

2020 ◽  
Vol 59 (2) ◽  
pp. 020501
Author(s):  
Shigefusa F. Chichibu ◽  
Yoichi Ishikawa ◽  
Kouji Hazu ◽  
Kentaro Furusawa
Keyword(s):  
Wide Bandgap ◽  
Nitride Semiconductors ◽  
Time Resolved ◽  
Group Iii ◽  
Group Iii Nitride

Renaissance and Progress in Nitride Semiconductors - My Personal History of Nitride Research -

2000 ◽  
Vol 639 ◽  
Author(s):  
Isamu Akasaki
Keyword(s):  
High Speed ◽  
High Performance ◽  
Green Light ◽  
Blue Laser ◽  
Personal History ◽  
Nitride Semiconductors ◽  
Quarter Century ◽  
Group Iii ◽  
History Of ◽  
Group Iii Nitride

ABSTRACTWide bandgap group-III nitride semiconductors are currently experiencing the most exciting development. High brightness blue and green light emitting diodes (LEDs) are commercialized, and UV and blue laser diodes (LDs), high-speed transistors (TRs) and UV photodetectors (PDs) with low dark current, which will be able to operate in harsh environments, have been demonstrated. In this paper, renaissance and progress in crystal growth and conductivity control of nitride semiconductors in the last quarter century are reviewed as the groundwork for all of those high-performance devices. My personal history of nitride research will be also introduced.

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