Improved GaN films with low background doping and low deep trap density grown by hydride vapor phase epitaxy

2015 ◽  
Vol 12 (4-5) ◽  
pp. 341-344
Author(s):  
Alexander Polyakov ◽  
Nikolai Smirnov ◽  
Anatoli Govorkov ◽  
Elena Kozhukhova ◽  
Tatiana Yugova ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Deep Trap ◽  
Vapor Phase Epitaxy ◽  
Trap Density ◽  
Hydride Vapor Phase Epitaxy ◽  
Low Background ◽  
Background Doping

Low background doping in AlInN grown on GaN via metalorganic vapor phase epitaxy

2020 ◽  
Vol 548 ◽  
pp. 125847 ◽  
Author(s):  
Damir Borovac ◽  
Wei Sun ◽  
Matthew R. Peart ◽  
Renbo Song ◽  
Jonathan J. Wierer ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Low Background ◽  
Background Doping

High‐speed InP/Ga0.47In0.53As superlattice avalanche photodiodes with very low background doping grown by continuous trichloride vapor‐phase epitaxy

1986 ◽  
Vol 60 (7) ◽  
pp. 2609-2612 ◽  
Author(s):  
V. D. Mattera ◽  
F. Capasso ◽  
J. Allam ◽  
A. L. Hutchinson ◽  
J. Dick ◽  
...  
Keyword(s):  
Vapor Phase ◽  
High Speed ◽  
Avalanche Photodiodes ◽  
Vapor Phase Epitaxy ◽  
Low Background ◽  
Background Doping

Growth of GaN Nanorods by a Hydride Vapor Phase Epitaxy Method

2002 ◽  
Vol 14 (13-14) ◽  
pp. 991-993 ◽  
Author(s):  
H.-M. Kim ◽  
D.S. Kim ◽  
Y.S. Park ◽  
D.Y. Kim ◽  
T.W. Kang ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Control of Surface Morphology during the Growth of (110)-Oriented GaAs by Hydride Vapor Phase Epitaxy

2021 ◽  
Author(s):  
Wondwosen Metaferia ◽  
Anna K. Braun ◽  
John Simon ◽  
Corinne E. Packard ◽  
Aaron J. Ptak ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Selective Area Growth by Hydride Vapor Phase Epitaxy and Optical Properties of InAs Nanowire Arrays

2021 ◽  
Author(s):  
Gabin Grégoire ◽  
Mohammed Zeghouane ◽  
Curtis Goosney ◽  
Nebile Isik Goktas ◽  
Philipp Staudinger ◽  
...  
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Nanowire Arrays ◽  
Hydride Vapor Phase Epitaxy ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth

The influence of reactor pressure on qualities of GaN layers grown by hydride vapor phase epitaxy

2009 ◽  
Vol 517 (6) ◽  
pp. 2088-2091 ◽  
Author(s):  
X.C. Cao ◽  
D.L. Xu ◽  
H.M. Guo ◽  
C.J. Liu ◽  
Z.J. Yin ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Reactor Pressure

scholarly journals Hydride Vapor-Phase Epitaxy of c-Plane AlGaN Layers on Patterned Sapphire Substrates

2013 ◽  
Vol 43 (4) ◽  
pp. 814-818 ◽  
Author(s):  
E. Richter ◽  
S. Fleischmann ◽  
D. Goran ◽  
S. Hagedorn ◽  
W. John ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Sapphire Substrates ◽  
Patterned Sapphire Substrates
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