Raman analysis of gold catalyst vapor liquid solid germanium nanowires

2014 ◽  
Vol 11 (11-12) ◽  
pp. 1618-1621
Author(s):  
M. Israel ◽  
A. Moreac ◽  
R. Rogel ◽  
J. P. Landesman ◽  
L. Pichon
Keyword(s):  
Gold Catalyst ◽  
Vapor Liquid Solid ◽  
Raman Analysis ◽  
Germanium Nanowires ◽  
Vapor Liquid

Unseeded growth of germanium nanowires by vapor-liquid-solid mechanism

2005 ◽  
Vol 86 (5) ◽  
pp. 053105 ◽  
Author(s):  
N. Zaitseva ◽  
J. Harper ◽  
D. Gerion ◽  
C. Saw
Keyword(s):  
Vapor Liquid Solid ◽  
Germanium Nanowires ◽  
Vapor Liquid Solid Mechanism ◽  
Vapor Liquid

Growth of Narrow and Straight Germanium Nanowires by Vapor–Liquid–Solid Chemical Vapor Deposition

2011 ◽  
Vol 50 (10R) ◽  
pp. 105002 ◽  
Author(s):  
Marolop Simanullang ◽  
Koichi Usami ◽  
Tetsuo Kodera ◽  
Ken Uchida ◽  
Shunri Oda
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Vapor Liquid Solid ◽  
Germanium Nanowires ◽  
Vapor Liquid

scholarly journals Microspheres for the Growth of Silicon Nanowires via Vapor-Liquid-Solid Mechanism

2014 ◽  
Vol 2014 ◽  
pp. 1-8 ◽  
Author(s):  
Arancha Gómez-Martínez ◽  
Francisco Márquez ◽  
Eduardo Elizalde ◽  
Carmen Morant
Keyword(s):  
Silicon Nanowires ◽  
Vapor Deposition ◽  
Gold Catalyst ◽  
Chemical Vapor ◽  
Carbon Microspheres ◽  
Vapor Liquid Solid ◽  
Thermal Chemical Vapor Deposition ◽  
Silicon Source ◽  
Vapor Liquid Solid Mechanism ◽  
Vapor Liquid

Silicon nanowires have been synthesized by a simple process using a suitable support containing silica and carbon microspheres. Nanowires were grown by thermal chemical vapor deposition via a vapor-liquid-solid mechanism with only the substrate as silicon source. The curved surface of the microsized spheres allows arranging the gold catalyst as nanoparticles with appropriate dimensions to catalyze the growth of nanowires. The resulting material is composed of the microspheres with the silicon nanowires attached on their surface.

Growth of Narrow and Straight Germanium Nanowires by Vapor–Liquid–Solid Chemical Vapor Deposition

2011 ◽  
Vol 50 (10) ◽  
pp. 105002 ◽  
Author(s):  
Marolop Simanullang ◽  
Koichi Usami ◽  
Tetsuo Kodera ◽  
Ken Uchida ◽  
Shunri Oda
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Vapor Liquid Solid ◽  
Germanium Nanowires ◽  
Vapor Liquid

Vapor—Liquid—Solid Growth of Silicon—Germanium Nanowires.

ChemInform ◽  
2004 ◽  
Vol 35 (10) ◽  
Author(s):  
Kok-Keong Lew ◽  
Ling Pan ◽  
Elizabeth C. Dickey ◽  
Joan M. Redwing
Keyword(s):  
Silicon Germanium ◽  
Vapor Liquid Solid ◽  
Germanium Nanowires ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

Vapor–Liquid–Solid Growth of Silicon–Germanium Nanowires

2003 ◽  
Vol 15 (24) ◽  
pp. 2073-2076 ◽  
Author(s):  
K.-K. Lew ◽  
L. Pan ◽  
E.C. Dickey ◽  
J.M. Redwing
Keyword(s):  
Silicon Germanium ◽  
Vapor Liquid Solid ◽  
Germanium Nanowires ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

Photoluminescence and Raman analysis of ZnO nanowires deposited on Si(100) via vapor–liquid–solid process

2008 ◽  
Vol 40 (4) ◽  
pp. 920-923 ◽  
Author(s):  
Li-li Yang ◽  
Jing-hai Yang ◽  
Dan-dan Wang ◽  
Yong-jun Zhang ◽  
Ya-xin Wang ◽  
...  
Keyword(s):  
Zno Nanowires ◽  
Vapor Liquid Solid ◽  
Raman Analysis ◽  
Vapor Liquid

VLS Growth of Si nanowhiskers on a H-terminated Si{111} surface

1998 ◽  
Vol 536 ◽  
Author(s):  
N. Ozaki ◽  
Y. Ohno ◽  
S. Takeda ◽  
M. Hirata
Keyword(s):  
High Pressure ◽  
Growth Condition ◽  
Growth Mechanism ◽  
Quantum Confinement ◽  
Critical Value ◽  
Extended Defects ◽  
Vapor Liquid Solid ◽  
Minimum Diameter ◽  
Vls Growth ◽  
Vapor Liquid

AbstractWe have grown Si nanowhiskers on a Si{1111} surface via the vapor-liquid-solid (VLS) mechanism. The minimum diameter of the crystalline is 3nm and is close to the critical value for the effect of quantum confinement. We have found that many whiskers grow epitaxially or non-epitaxially on the substrate along the 〈112〉 direction as well as the 〈111〉 direction.In our growth procedure, we first deposited gold on a H-terminated Si{111} surface and prepared the molten catalysts of Au and Si at 500°C. Under the flow of high pressure silane gas, we have succeeded in producing the nanowhiskers without any extended defects. We present the details of the growth condition and discuss the growth mechanism of the nanowhiskers extending along the 〈112〉 direction.

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