Carrier trapping induced abnormal temperature dependent photoluminescence properties of novel sandwiched structure InGaN quantum wells

2014 ◽  
Vol 11 (3-4) ◽  
pp. 706-709
Author(s):  
Juan He ◽  
Ding Li ◽  
K. Rajabi ◽  
Wei Yang ◽  
Lei Liu ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Photoluminescence Properties ◽  
Temperature Dependent ◽  
Carrier Trapping ◽  
Sandwiched Structure ◽  
Temperature Dependent Photoluminescence ◽  
Ingan Quantum Wells ◽  
Abnormal Temperature

Influence of excitation power on temperature-dependent photoluminescence of phase-separated InGaN quantum wells

2016 ◽  
Vol 14 (4) ◽  
pp. 042302-42306 ◽  
Author(s):  
Haiyan Lü Haiyan Lü ◽  
Yuanjie Lü Yuanjie Lü ◽  
Qiang Wang Qiang Wang ◽  
Jianfei Li Jianfei Li ◽  
Zhihong Feng Zhihong Feng ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Excitation Power ◽  
Temperature Dependent ◽  
Temperature Dependent Photoluminescence ◽  
Ingan Quantum Wells

Corrigendum-influence of excitation power on temperature-dependent photoluminescence of phase-separated InGaN quantum wells

2016 ◽  
Vol 14 (8) ◽  
pp. 083501-83501
Author(s):  
Haiyan Lü Haiyan Lü ◽  
Yuanjie Lü Yuanjie Lü ◽  
Qiang Wang Qiang Wang ◽  
Jianfei Li Jianfei Li ◽  
Zhihong Feng Zhihong Feng ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Excitation Power ◽  
Temperature Dependent ◽  
Temperature Dependent Photoluminescence ◽  
Ingan Quantum Wells

Strain Effect on Temperature Dependent Photoluminescence from InxGa1-xAs/GaAs Quantum Wells

2011 ◽  
Vol 32 (2) ◽  
pp. 164-168
Author(s):  
叶志成 YE Zhi-cheng ◽  
舒永春 SHU Yong-chun ◽  
曹雪 CAO Xue ◽  
龚亮 GONG Liang ◽  
姚江宏 YAO Jiang-hong ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Strain Effect ◽  
Temperature Dependent ◽  
Temperature Dependent Photoluminescence

scholarly journals InGaN quantum wells with improved photoluminescence properties through strain-controlled modification of the InGaN underlayer

2019 ◽  
Vol 58 (SC) ◽  
pp. SCCB28 ◽  
Author(s):  
Susumu Kusanagi ◽  
Yuya Kanitani ◽  
Yoshihiro Kudo ◽  
Kunihiko Tasai ◽  
Atsushi A. Yamaguchi ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Photoluminescence Properties ◽  
Ingan Quantum Wells

scholarly journals Investigation of temperature-dependent photoluminescence in multi-quantum wells

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Yutao Fang ◽  
Lu Wang ◽  
Qingling Sun ◽  
Taiping Lu ◽  
Zhen Deng ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Temperature Dependent ◽  
Temperature Dependent Photoluminescence

scholarly journals Temperature‐Dependent Charge Carrier Diffusion in [0001¯] Direction of GaN Determined by Luminescence Evaluation of Buried InGaN Quantum Wells

2020 ◽  
Vol 257 (6) ◽  
pp. 2000016 ◽  
Author(s):  
Carsten Netzel ◽  
Veit Hoffmann ◽  
Jens W. Tomm ◽  
Felix Mahler ◽  
Sven Einfeldt ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Quantum Wells ◽  
Temperature Dependent ◽  
Carrier Diffusion ◽  
Charge Carrier Diffusion ◽  
Ingan Quantum Wells

Temperature-dependent photoluminescence of PbS quantum dots in glass: Evidence of exciton state splitting and carrier trapping

2010 ◽  
Vol 82 (12) ◽  
Author(s):  
Maxim S. Gaponenko ◽  
Andrey A. Lutich ◽  
Nikolai A. Tolstik ◽  
Alexei A. Onushchenko ◽  
Alexander M. Malyarevich ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Exciton State ◽  
Temperature Dependent ◽  
Carrier Trapping ◽  
State Splitting ◽  
Pbs Quantum Dots ◽  
Temperature Dependent Photoluminescence

Optical properties of InGaAsBi/GaAs strained quantum wells studied by temperature-dependent photoluminescence

2013 ◽  
Vol 22 (3) ◽  
pp. 037802 ◽  
Author(s):  
Yi Gu ◽  
Yong-Gang Zhang ◽  
Yu-Xin Song ◽  
Hong Ye ◽  
Yuan-Ying Cao ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Temperature Dependent ◽  
Strained Quantum Wells ◽  
Temperature Dependent Photoluminescence
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