Fermi-level pinning by carrier com- pensating midgap donor defect band in homoepitaxially grown p-type ZnO by MBE

2014 ◽  
Vol 11 (7-8) ◽  
pp. 1353-1356 ◽  
Author(s):  
T. Masamoto ◽  
K. Noda ◽  
T. Maejima ◽  
R. Natsume ◽  
T. Matsuo ◽  
...  
Keyword(s):  
Fermi Level ◽  
Defect Band ◽  
Fermi Level Pinning ◽  
P Type ◽  
Donor Defect

Anomalously persistent p-type behavior of WSe2 field-effect transistors by oxidized edge-induced Fermi-level pinning

2022 ◽  
Author(s):  
Tien Dat Ngo ◽  
Min Sup Choi ◽  
Myeongjin Lee ◽  
Fida Ali ◽  
Won Jong Yoo
Keyword(s):  
Fermi Level ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Two Dimensional ◽  
Edge Contact ◽  
Fermi Level Pinning ◽  
P Type

A technique to form the edge contact in two-dimensional (2D) based field-effect transistors (FETs) has been intensively studied for the purpose of achieving high mobility and also recently overcoming the...

STM studies of Fermi-level pinning on the GaAs(001) surface

1993 ◽  
Vol 344 (1673) ◽  
pp. 533-543 ◽  
Keyword(s):  
Fermi Level ◽  
Valence Band ◽  
Surface Defects ◽  
Defect Density ◽  
Valence Band Maximum ◽  
Intrinsic Defect ◽  
Fermi Level Pinning ◽  
Donor States ◽  
P Type ◽  
Surface Donor

This paper reviews recent scanning tunnelling microsopy (STM) studies of Fermi-level pinning on the surface of both n- and p-type GaAs(001). The samples are all grown by molecular beam epitaxy and have a (2 x 4)/c(2 x 8) surface reconstruction. The STM has shown that on the surface of highly doped n-type GaAs(001) there is a high density of kinks in the dimer-vacancy rows of the (2 x 4) reconstruction. These kinks are found to be surface acceptors with approximately one electron per kink. The kinks form in exactly the required number to pin the Fermi-level of n-type GaAs(001) at an acceptor level close to mid gap, irrespective of doping level. The Fermi-level position is confirmed with tunnelling spectroscopy. No similar surface donor states are found on p-type GaAs(001). In this case Fermi-level pinning results from ‘intrinsic’ surface defects such as step edges. Since this intrinsic defect density is independent of doping, at high doping levels the Fermi-level on p-type GaAs(001) moves down in the band gap towards the valence band. Tunnelling spectroscopy on p-type GaAs(001) doped 10 19 cm -3 with Be shows the Fermi-level to be 150 mV above the valence band maximum

NEGATIVE MAGNETORESISTANCE IN PbTe(Mn,Cr)

2002 ◽  
Vol 16 (20n22) ◽  
pp. 3343-3346 ◽  
Author(s):  
D. KHOKHLOV ◽  
I. IVANCHIK ◽  
A. KOZHANOV ◽  
A. MOROZOV ◽  
E. SLYNKO ◽  
...  
Keyword(s):  
Fermi Level ◽  
Band Edge ◽  
Negative Magnetoresistance ◽  
Conduction Band Edge ◽  
Valence Band Edge ◽  
Narrow Gap ◽  
Magnetoresistance Effect ◽  
Fermi Level Pinning ◽  
P Type ◽  
Substantial Drop

We have observed the negative magnetoresistance effect in the narrow-gap PbTe(Mn,Cr) semiconductor, in which the Fermi level is pinned within the gap nearby the conduction band edge. Previously the giant negative magentoresistance effect has been reported in PbTe(Mn,Yb), in which the Fermi level is pinned in the gap nearby the valence band edge. It is known that in the case of Yb doping the Fermi level pinning results from the 2+ - 3+ valence instability of an impurity. The same sort of the valence instability provides the Fermi level pinning in PbTe(Mn,Cr), but the conductivity is of the n-type, not of the p-type as in PbTe(Mn,Yb). Introduction of magnetic field leads to substantial drop of the PbTe(Mn,Cr) resistivity of about 30% at T = 4.2 K. This is however much lower than in PbTe(Mn,Yb), where the effect amplitude reached 3 orders of magnitude. The effect disappears at T = 15 K. Possible mechanisms of the effect are discussed.

Decoupling the Fermi-level pinning effect and intrinsic limitations on p-type effective work function metal electrodes

2008 ◽  
Vol 85 (1) ◽  
pp. 2-8 ◽  
Author(s):  
Huang-Chun Wen ◽  
Prashant Majhi ◽  
Kisik Choi ◽  
C.S. Park ◽  
Husam N. Alshareef ◽  
...  
Keyword(s):  
Fermi Level ◽  
Work Function ◽  
Metal Electrodes ◽  
Effective Work ◽  
Effective Work Function ◽  
Fermi Level Pinning ◽  
Pinning Effect ◽  
P Type

Beam Annealing of Ion-Implanted Gaas and Inp

1980 ◽  
Vol 1 ◽  
Author(s):  
J. C. C. Fan ◽  
R. L. Chapman ◽  
J. P. Donnelly ◽  
G. W. Turner ◽  
C. O. Bozler
Keyword(s):  
Solar Cells ◽  
Electrical Properties ◽  
Ion Implantation ◽  
Fermi Level ◽  
Laser Annealing ◽  
Electrical Activation ◽  
Fermi Level Pinning ◽  
P Type ◽  
Conversion Efficiencies ◽  
Ion Implanted

ABSTRACTA scanned cw Nd: YAG laser was used to anneal ion-implanted GaAs and InP wafers. Measurements show that electrical activation is greater for p-type than for n-type dopants in GaAs, while in InP, the opposite is observed. A simple Fermi-level pinning model is presented to explain not only the electrical properties we have measured, but also those observed by other workers. We have fabricated GaAs and InP solar cells with junctions formed by ion implantation followed by laser annealing. The GaAs cells have much better conversion efficiencies than the InP cells, and this difference can be explained in terms of the model.

ChemInform Abstract: PHOTOREDUCTION AT ILLUMINATED P-TYPE SEMICONDUCTING SILICON PHOTOELECTRODES. EVIDENCE FOR FERMI LEVEL PINNING

1980 ◽  
Vol 11 (35) ◽  
Author(s):  
A. B. BOCARSLY ◽  
D. C. BOOKBINDER ◽  
R. N. DOMINEY ◽  
N. S. LEWIS ◽  
M. S. WRIGHTON
Keyword(s):  
Fermi Level ◽  
Fermi Level Pinning ◽  
P Type

Barrier heights and Fermi level pinning in metal contacts on p-type GaN

2020 ◽  
Vol 116 (21) ◽  
pp. 213506 ◽  
Author(s):  
Sumaiya Wahid ◽  
Nadim Chowdhury ◽  
Md Kawsar Alam ◽  
Tomás Palacios
Keyword(s):  
Fermi Level ◽  
Metal Contacts ◽  
Fermi Level Pinning ◽  
Barrier Heights ◽  
P Type
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