Growth of CuGaTe2 based compounds by a closed space sublimation method

2014 ◽  
Vol 11 (7-8) ◽  
pp. 1190-1193 ◽  
Author(s):  
Ayaka Usui ◽  
Aya Uruno ◽  
Masakazu Kobayashi
Keyword(s):  
Closed Space ◽  
Closed Space Sublimation ◽  
Sublimation Method ◽  
Space Sublimation

Catalytic growth of CdTe nanowires by closed space sublimation method

2013 ◽  
Vol 546 ◽  
pp. 375-378 ◽  
Author(s):  
Gwangseok Yang ◽  
Younghun Jung ◽  
Seungju Chun ◽  
Donghwan Kim ◽  
Jihyun Kim
Keyword(s):  
Closed Space ◽  
Catalytic Growth ◽  
Closed Space Sublimation ◽  
Sublimation Method ◽  
Space Sublimation

The growth of AgGaTe2 layers on glass substrates with Ag2 Te buffer layer by closed space sublimation method

2015 ◽  
Vol 12 (6) ◽  
pp. 508-511 ◽  
Author(s):  
Aya Uruno ◽  
Ayaka Usui ◽  
Yuji Takeda ◽  
Tomohiro Inoue ◽  
Masakazu Kobayashi
Keyword(s):  
Buffer Layer ◽  
Closed Space ◽  
Glass Substrates ◽  
Closed Space Sublimation ◽  
Sublimation Method ◽  
Space Sublimation

6H-SiC Homoepitaxial Growth and Optical Property of Boron- and Nitrogen-Doped Donor-Acceptor Pair (DAP) Emission of 1º-Off Substrate by Closed-Space Sublimation Method

2006 ◽  
Vol 527-529 ◽  
pp. 263-266 ◽  
Author(s):  
Y. Kawai ◽  
Tomohiko Maeda ◽  
Yoshihiro Nakamura ◽  
Yoji Sakurai ◽  
Motoaki Iwaya ◽  
...  
Keyword(s):  
High Speed ◽  
Closed Space ◽  
Acceptor Pair ◽  
High Quality ◽  
Homoepitaxial Growth ◽  
Closed Space Sublimation ◽  
Sublimation Method ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
Space Sublimation

We demonstrate high-speed and high-quality 6H-SiC homoepitaxial growth on a 1°-off c-plane SiC substrate by a closed-space sublimation method. By optimizing the size of single-crystal source materials in the growth system, a high-quality 6H-SiC epilayer with an X-ray diffraction rocking curve (0006) full-width at the half maximum (FWHM) of 38 arcsec was obtained. We also carried out doping of nitrogen and boron during the growth of the SiC epilayer. A strong donor-acceptor pair (DAP) emission at a peak wavelength of 570 nm under excitation by a 395 nm nitride-based light-emitting diode (LED) was observed. The 6H-SiC with DAP emission is promising for use as a phosphor in a nitride-based LED, because high-quality nitride layers can be grown on the SiC substrates with small off-oriented angles.

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