Epitaxial growth of Mg2 Si films on strontium titanate single crystals

2013 ◽  
Vol 10 (12) ◽  
pp. 1688-1691 ◽  
Author(s):  
Kensuke Akiyama ◽  
Atsuo Katagiri ◽  
Shota Ogawa ◽  
Masaaki Matsushima ◽  
Hiroshi Funakubo
Keyword(s):  
Epitaxial Growth ◽  
Single Crystals ◽  
Strontium Titanate ◽  
Si Films

Electron Energy Analysis of Germanium and Silica Layers on Silicon Substrates

1975 ◽  
Vol 33 ◽  
pp. 96-97
Author(s):  
R. W. Ditchfield ◽  
A. G. Cullis
Keyword(s):  
Epitaxial Growth ◽  
Electron Energy ◽  
Silicon Substrates ◽  
Secondary Phases ◽  
Si Substrates ◽  
Transmission Electron ◽  
Layer Structures ◽  
Si Films ◽  
Electron Energy Loss ◽  
Growth Centres

An energy analyzing transmission electron microscope of the Möllenstedt type was used to measure the electron energy loss spectra given by various layer structures to a spatial resolution of 100Å. The technique is an important, method of microanalysis and has been used to identify secondary phases in alloys and impurity particles incorporated into epitaxial Si films.Layers Formed by the Epitaxial Growth of Ge on Si Substrates Following studies of the epitaxial growth of Ge on (111) Si substrates by vacuum evaporation, it was important to investigate the possible mixing of these two elements in the grown layers. These layers consisted of separate growth centres which were often triangular and oriented in the same sense, as shown in Fig. 1.

Rapid Epitaxial Growth of Si and SiGe Mono-Crystalline Films on Silicon-on-Glass Substrates by Reactive CVD Using SiH4, GeH4, and F2

2012 ◽  
Vol 1426 ◽  
pp. 331-337
Author(s):  
Hiroshi Noge ◽  
Akira Okada ◽  
Ta-Ko Chuang ◽  
J. Greg Couillard ◽  
Michio Kondo
Keyword(s):  
Epitaxial Growth ◽  
Heating Temperature ◽  
Exothermic Reaction ◽  
Epitaxial Films ◽  
Si Substrates ◽  
Glass Substrates ◽  
Good Crystallinity ◽  
Crystalline Films ◽  
Si Films ◽  
First Time

ABSTRACTWe have succeeded in the rapid epitaxial growth of Si, Ge, and SiGe films on Si substrates below 670 ºC by reactive CVD utilizing the spontaneous exothermic reaction between SiH4, GeH4, and F2. Mono-crystalline SiGe epitaxial films with Ge composition ranging from 0.1 to 1.0 have been successfully grown by reactive CVD for the first time.This technique has also been successfully applied to the growth of these films on silicon-on-glass substrates by a 20 - 50 ºC increase of the heating temperature. Over 10 μm thick epitaxial films at 3 nm/s growth rate are obtained. The etch pit density of the 5.2 μm-thick Si0.5Ge0.5 film is as low as 5 x 106 cm-2 on top. Mobilities of the undoped SiGe and Si films are 180 to 550 cm2/Vs, confirming the good crystallinity of the epitaxial films.

Epitaxial Growth Following Crystal Nucleation in Laser-Quenched Si Films on SiO2

2015 ◽  
Vol 1770 ◽  
pp. 67-72
Author(s):  
Vernon K. Wong ◽  
A. M. Chitu ◽  
A. B. Limanov ◽  
James S. Im
Keyword(s):  
Epitaxial Growth ◽  
Growth Model ◽  
Crystal Nucleation ◽  
Key Factors ◽  
Complete Melting ◽  
Melting Regime ◽  
Direct Growth ◽  
Crystal Core ◽  
Excimer Laser Irradiation ◽  
Si Films

ABSTRACTWe have investigated the solidified microstructure of nucleation-generated grains obtained via complete melting of Si films on SiO2 at high nucleation temperatures. This was achieved using a high-temperature-capable hot stage in conjunction with excimer laser irradiation. As predicted by the direct-growth model that considers (1) the evolution in the temperature of the solidifying interface and (2) the subsequent modes of growth (consisting of amorphous, defective, and epitaxial) as key factors, we were able to observe the appearance of “normal” grains that possess a single-crystal core area. These grains, which are in contrast to previously reported flower-shaped grains that fully make up the microstructure of the solidified films obtained via irradiation at lower preheating temperatures (and amongst which these “normal” grains emerge), indicate that epitaxial growth of nucleated crystals must have taken place within the grains. We discuss the implications of our findings regarding (1) the validity of the direct-growth model, (2) the nature of the heterogeneous nucleation mechanism, and (3) the alternative explanations and assumptions that have been previously employed in order to explain the microstructure of Si films obtained via nucleation and growth within the complete melting regime.

A-site surface termination in strontium titanate single crystals

2001 ◽  
Vol 79 (12) ◽  
pp. 1786-1788 ◽  
Author(s):  
A. G. Schrott ◽  
J. A. Misewich ◽  
M. Copel ◽  
D. W. Abraham ◽  
Y. Zhang
Keyword(s):  
Single Crystals ◽  
Strontium Titanate ◽  
Surface Termination ◽  
A Site

Preparation of Strontium Titanate / Barium Titanate Complex Nanoparticles Using New Titanium Chelate Compounds

2010 ◽  
Vol 445 ◽  
pp. 175-178 ◽  
Author(s):  
Takayuki Goto ◽  
Petr Pulpan ◽  
Takahiro Takei ◽  
Yoshihiro Kuroiwa ◽  
Satoshi Wada
Keyword(s):  
Barium Titanate ◽  
Epitaxial Growth ◽  
Strontium Titanate ◽  
Particle Growth ◽  
Solvothermal Reaction ◽  
Reaction Method ◽  
Chelate Compounds

The conditions for strontium titanate (SrTiO3, ST) nucleation and particle growth were investigated for preparation of ST/ barium titanate (BaTiO3, BT) complex nanoparticles. The conditions with and without ST nucleation were clarified. Epitaxial growth of ST layer on the BT substrate particles was studied using both conditions. Unfortunately, the ST/BT complex nanoparticles with heteroepitaxial interface were not prepared, but a new two-step solvothermal reaction method was developed. Finally, the ST/BT complex nanoparticles without heteroepitaxial interface were successfully prepared.

Epitaxial growth of N delta doped Si films on Si(1 0 0) by alternately supplied NH3 and SiH4

2004 ◽  
Vol 224 (1-4) ◽  
pp. 197-201 ◽  
Author(s):  
Youngcheon Jeong ◽  
Masao Sakuraba ◽  
Junichi Murota
Keyword(s):  
Epitaxial Growth ◽  
Si Films
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