Electron-beam incident-angle- resolved cathodoluminescence studies on bulk ZnO crystals

2013 ◽  
Vol 10 (5) ◽  
pp. 869-872 ◽  
Author(s):  
Takeyoshi Onuma ◽  
Tomohiro Yamaguchi ◽  
Tohru Honda
Keyword(s):  
Electron Beam ◽  
Incident Angle ◽  
Beam Incident ◽  
Electron Beam Incident

An average method for intense pulsed electron beam incident angles

2015 ◽  
Vol 27 (1) ◽  
pp. 14001
Author(s):  
孙剑锋 Sun Jianfeng ◽  
胡杨 Hu Yang ◽  
孙江 Sun Jiang ◽  
杨海亮 Yang Hailiang ◽  
张鹏飞 Zhang Pengfei ◽  
...  
Keyword(s):  
Electron Beam ◽  
Average Method ◽  
Pulsed Electron Beam ◽  
Beam Incident ◽  
Electron Beam Incident

High-resolution structure determination by ALCHEMI

1983 ◽  
Vol 41 ◽  
pp. 178-181 ◽  
Author(s):  
Peter G. Self ◽  
Peter R. Buseck
Keyword(s):  
Site Occupancy ◽  
Real Space ◽  
Unit Cell ◽  
Bragg Angle ◽  
Electron Current ◽  
High Resolution Structure ◽  
Beam Incident ◽  
Crystallographic Planes ◽  
Electron Beam Incident ◽  
Resolution Structure

ALCHEMI (Atom Location by CHanneling Enhanced Microanalysis) enables the site occupancy of atoms in single crystals to be determined. In this article the fundamentals of the method for both EDS and EELS will be discussed. Unlike HRTEM, ALCHEMI does not place stringent resolution requirements on the microscope and, because EDS clearly distinguishes between elements of similar atomic number, it can offer some advantages over HRTEM. It does however, place certain constraints on the crystal. These constraints are: a) the sites of interest must lie on alternate crystallographic planes, b) the projected charge density on the alternate planes must be significantly different, and c) there must be at least one atomic species that lies solely on one of the planes.An electron beam incident on a crystal undergoes elastic scattering; in reciprocal space this is seen as a diffraction pattern and in real space this is a modulation of the electron current across the unit cell. When diffraction is strong (i.e., when the crystal is oriented near to the Bragg angle of a low-order reflection) the electron current at one point in the unit cell will differ significantly from that at another point.

Abstract ID: 136 Kompeito-shot system: Evaluation of the systematic error caused by beam incident angle using Monte Carlo simulation

2017 ◽  
Vol 42 ◽  
pp. 29
Author(s):  
Masato Tsuneda ◽  
Teiji Nishio ◽  
Akito Saito ◽  
Sodai Tanaka ◽  
Daisuke Kawahara ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Systematic Error ◽  
Incident Angle ◽  
System Evaluation ◽  
Beam Incident
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