Local compressive stress generation in electron irradiated boron-doped Si0.75 Ge0.25 /Si devices

2012 ◽  
Vol 9 (10-11) ◽  
pp. 2058-2061 ◽  
Author(s):  
Isao Tsunoda ◽  
Toshiyuki Nakashima ◽  
Nobuyuki Naka ◽  
Tatsuya Idemoto ◽  
Masashi Yoneoka ◽  
...  
Keyword(s):  
Compressive Stress ◽  
Stress Generation ◽  
Boron Doped

Molecular-dynamics study of compressive stress generation

1996 ◽  
Vol 53 (7) ◽  
pp. 4117-4124 ◽  
Author(s):  
N. A. Marks ◽  
D. R. McKenzie ◽  
B. A. Pailthorpe
Keyword(s):  
Molecular Dynamics ◽  
Compressive Stress ◽  
Stress Generation

scholarly journals Direct observation of pore collapse and tensile stress generation on pore walls due to salt crystallization in a PDMS channel

Soft Matter ◽  
2019 ◽  
Vol 15 (22) ◽  
pp. 4562-4569 ◽  
Author(s):  
Antoine Naillon ◽  
Pierre Joseph ◽  
Marc Prat
Keyword(s):  
Tensile Stress ◽  
Compressive Stress ◽  
Direct Observation ◽  
Stress Generation ◽  
Salt Crystallization ◽  
Pore Collapse ◽  
Crystallization Pressure ◽  
Salt Crystallisation ◽  
Pdms Channel ◽  
Classical Picture

In contrast with the classical picture where the generation of stress on pore walls due to salt crystallisation is analysed by a compressive stress using the concept of crystallization pressure, we report a mechanism leading to the generation of a local tensile stress.

Real time in-situ stress evolution investigation of highly textured electrodeposited bismuth thin films

2003 ◽  
Vol 781 ◽  
Author(s):  
Donglei Fan ◽  
Frank Q. Zhu ◽  
Ingrid X. Shao ◽  
P. C. Searson ◽  
R. C. Cammarata
Keyword(s):  
Real Time ◽  
Compressive Stress ◽  
Film Growth ◽  
Stress Measurement ◽  
Mean Free Path ◽  
In Situ Stress ◽  
Stress Generation ◽  
In Situ Stress Measurement ◽  
Bismuth Films

AbstractBismuth, a semi-metal with very long mean free path and large magnetoresistance (MR) effect, is a novel candidate material for thin film spintronic devices. Electrochemical deposition followed by a post-deposition anneal has resulted in highly textured bismuth films as characterized by x-ray diffractometry and pole figure measurements. A highly sensitive, real time in-situ stress measurement system was designed and employed to study stress generation during bismuth film growth. Bismuth films displayed a monotonically increasing compressive stress during deposition. The magnitude of the compressive stress decreased with the deposition rate in the range 1.5 Å/sec to 50 Å/sec.

Sensitivity of a Rotating Beam Sensor for Stress Evaluation in Aluminium Thin Films

2005 ◽  
Vol 490-491 ◽  
pp. 649-654 ◽  
Author(s):  
J.M.M. dos Santos ◽  
J.C.P. Pina ◽  
António Castanhola Batista ◽  
Alton B. Horsfall ◽  
Kai Wang ◽  
...  
Keyword(s):  
Compressive Stress ◽  
Incident Angle ◽  
Stress Generation ◽  
Aluminum Layer ◽  
X Ray Diffraction ◽  
Rotating Beam ◽  
X Ray ◽  
Reflected Light ◽  
Sensor Structure ◽  
Stress States

The evaluation of stress in sub-micron tracks is critical for the microelectronics industry and there is a need for new methods of measurement. This paper advocates the use of a rotating beam sensor structure which can be fabricated on the wafer along side electronic devices and used to monitor stress generation and relaxation as a function of processing. The rotation can be observed with a reflected light microscope and correlated to the actual stress level. Several samples, assputtered and sintered, were prepared with the aim of having different residual stress states. X-ray diffraction with a low incident angle geometry, was used to evaluate the residual stresses on the aluminum layer. Computer simulations using ANSYS were also performed in order to correlate the sensor rotation with the experimental stress values. It was observed that the extrinsic stress from the mismatch in expansion coefficients between the aluminum layer and the silicon substrate dominates over the compressive stress from the sputter growth. Sintering the layers at temperatures above 150°C reduces this compressive stress due to the action of creep. The calibration of the rotation of the device with the direct measurements of the X-ray diffraction shows that the sensor has a resolution better than 2.8 MPa.

Measurement of Stress Development during HVOF Thermal Spray

1997 ◽  
Author(s):  
S. Kuroda ◽  
Y. Tashiro ◽  
H. Yumoto ◽  
S. Taira ◽  
H. Fukanuma
Keyword(s):  
Compressive Stress ◽  
Substrate Surface ◽  
Stress Generation ◽  
Powder Materials ◽  
Stress Evolution ◽  
Hvof Process ◽  
Hvof Thermal Spray ◽  
Hvof Spray ◽  
Stress Buildup

Abstract Direct and quantitative observation of the stress generation during HVOF spray is carried out by measuring the curvature of substrates in-situ during spraying. A high pressure HVOF gun is used to spray SUS316L, Hastelloy C and WC-12%Co powder onto SUS316L substrates. The observed curvature data indicate that there are 3 regimes of stress evolution during the HVOF spray: (1) generation of compressive stress on the substrate surface at the beginning of spraying, (2) stress buildup in the coating during spraying, and (3) superposition of stress due to the mismatch in the thermal expansivity between the coating and the substrate as the specimen cools down to the room temperature after fabrication. Compressive stress ranging from 70 to 400 MPa is observed in the second regime during the HVOF spray; the value depending on the powder materials and spray conditions. Microstructural observation reveals that a significant portion of the coatings consists of poorly molten particles. Beneath the coatings formed by the HVOF process, a thin layer of increased hardness exists within the substrate.

Isolated A+ states in boron doped silicon under high compressive stress

1979 ◽  
Vol 30 (6) ◽  
pp. 395-398 ◽  
Author(s):  
N. Sugimoto ◽  
S. Narita ◽  
M. Taniguchi ◽  
M. Kobayashi
Keyword(s):  
Compressive Stress ◽  
Boron Doped ◽  
Doped Silicon

Internal Stress Generation in Rattan Canes

IAWA Journal ◽  
1999 ◽  
Vol 20 (1) ◽  
pp. 45-58 ◽  
Author(s):  
Willie Abasolo ◽  
Masato Yoshida ◽  
Hiroyuki Yamamoto ◽  
Takashi Okuyama
Keyword(s):  
Tensile Stress ◽  
Internal Stress ◽  
Compressive Stress ◽  
Compression Wood ◽  
Lignin Content ◽  
Stress Generation ◽  
Tensile Stresses ◽  
Stress Development ◽  
The Core ◽  
Compressive Stresses

Internal stress development was investigated in rattan canes (Calamus merrillii Becc.) following the procedures used in trees. Measurements showed that longitudinal compressive stresses existed at the periphery while longitudinal tensile stresses existed at the core. Such stresses originated from the fibers. Fiber MFA was observed to be beyond 20" and the lignin content was above 30%. Considering its similarities to compression wood tracheids, it was assumed that the rattan fibers generated longitudinal compressive stress. The amount of stress varied from base to top and from periphery to core because of the variation in the proportion of fibers along these points. This is why the longitudinal compressive stress that was generated at the base was higher than at the top and high longitudinal compressive stress was developed at the periphery. As a response to this high peripheral stress, longitudinal tensile stress was induced at the core.

Static fatigue and compressive stress generation in an aged crack

2017 ◽  
Vol 101 (4) ◽  
pp. 1526-1536 ◽  
Author(s):  
Peter J. Lezzi ◽  
Jared H. Seaman
Keyword(s):  
Compressive Stress ◽  
Stress Generation ◽  
Static Fatigue

scholarly journals Anomalous interfacial stress generation during sodium intercalation/extraction in MoS2 thin-film anodes

2019 ◽  
Vol 5 (1) ◽  
pp. eaav2820 ◽  
Author(s):  
Zhi Li ◽  
Keren Jiang ◽  
Faheem Khan ◽  
Ankur Goswami ◽  
Jun Liu ◽  
...  
Keyword(s):  
Compressive Stress ◽  
Electrode Materials ◽  
Storage Capacity ◽  
Interfacial Stress ◽  
Stress Generation ◽  
Electrode Degradation ◽  
Battery Design ◽  
Wide Range ◽  
Voltage Plateau ◽  
Long Lifetime

Although the generation of mechanical stress in the anode material is suggested as a possible reason for electrode degradation and fading of storage capacity in batteries, only limited knowledge of the electrode stress and its evolution is available at present. Here, we show real-time monitoring of the interfacial stress of a few-layer MoS2 system under the sodiation/desodiation process using microcantilever electrodes. During the first sodiation with a voltage plateau of 1.0 to 0.85 V, the MoS2 exhibits a compressive stress (2.1 Nm−1), which is substantially smaller than that measured (9.8 Nm−1) during subsequent plateaus at 0.85 to 0.4 V due to the differential volume expansion of the MoS2 film. The conversion reaction to Mo below 0.1 V generates an anomalous compressive stress of 43 Nm−1 with detrimental effects. These results also suggest the existence of a separate discharge stage between 0.6 and 0.1 V, where the generated stress is only approximately one-third of that observed below 0.1 V. This approach can be adapted to help resolve the localized stress in a wide range of electrode materials, to gain additional insights into mechanical effects of charge storage, and for long-lifetime battery design.

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