DFT study of the effect of hydrostatic pressure on formation and migration enthalpies of intrinsic point defects in single crystal Si

2012 ◽  
Vol 9 (10-11) ◽  
pp. 1947-1951 ◽  
Author(s):  
Koji Sueoka ◽  
Eiji Kamiyama ◽  
Hiroaki Kariyazaki ◽  
Jan Vanhellemont
Keyword(s):  
Hydrostatic Pressure ◽  
Single Crystal ◽  
Point Defects ◽  
Dft Study ◽  
Intrinsic Point Defects ◽  
And Migration ◽  
Effect Of Hydrostatic Pressure

scholarly journals Peculiarities of pseudogap in Y0.95Pr0.05Ba2Cu3O7−δ single crystals under pressure up to 1.7 GPa

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
A. L. Solovjov ◽  
L. V. Omelchenko ◽  
E. V. Petrenko ◽  
R. V. Vovk ◽  
V. V. Khotkevych ◽  
...  
Keyword(s):  
Critical Temperature ◽  
Hydrostatic Pressure ◽  
Single Crystal ◽  
Single Crystals ◽  
Temperature Interval ◽  
Fluctuation Theory ◽  
Structural Defects ◽  
Fluctuation Conductivity ◽  
First Time ◽  
Effect Of Hydrostatic Pressure

AbstractThe effect of hydrostatic pressure up to P = 1.7 GPa on the fluctuation conductivity σ′(T) and pseudogap ∆*(T) in Y0.95Pr0.05Ba2Cu3O7−δ single crystal with critical temperature Тс = 85.2 K (at P = 0) was investigated. The application of pressure leads to the increase in Tc with dTc/dP = +1.82 K∙GPa−1 while the resistance decreases as dlnρ(100 K)/dP = −(10.5 ± 0.2) %∙GPa−1. Regardless of the pressure, in the temperature interval from Tc to T0 (~88 K at P = 0) the behaviour of σ′(T) is well described by the Aslamazov – Larkin (AL – 3D) fluctuation theory, and above the T0 by the Lawrence – Doniach theory (LD). The Maki-Thompson (MT – 2D) fluctuation contribution is not observed. This indicates the presence of structural defects in the sample induced by Pr. Here it is determined for the first time that when the pressure is applied to the Y1−xPrxBa2Cu3O7−δ single crystal, the pseudogap increases as dlnΔ*/dP = 0.17 GPa–1.

Stress - Dependent Out - Annealing of Defects in Self - Implanted Silicon

2005 ◽  
Vol 108-109 ◽  
pp. 351-356 ◽  
Author(s):  
Andrzej Misiuk ◽  
Barbara Surma ◽  
Jadwiga Bak-Misiuk
Keyword(s):  
Hydrostatic Pressure ◽  
Point Defects ◽  
Spatial Position ◽  
Si Substrate ◽  
X Ray ◽  
Stress Dependent ◽  
Effect Of Hydrostatic Pressure

Effect of hydrostatic pressure (HP) on out – annealing of defects in self – implanted silicon (Si:Si, Si+ doses 5x1016 cm-2 and 1x1017 cm-2, energies 50 keV and 160 keV), treated for 1 – 10 h at up to 1400 K (HT) under HP ≤ 1.4 GPa, has been investigated by photoluminescence, X-ray and related methods. Applied at 720 – 1270 K enhanced pressure does not affect or affects adversely Si:Si structure while at 1400 K assists in its improvement. HP – dependent transformations in Si:Si at HT are related to effect of HP on diffusion of point defects, such as silicon interstitials and vacancies produced at implantation. Out - annealing of defects in self - implanted silicon is dependent also on spatial position of damaged areas in Si substrate.

scholarly journals DC-Electrical Properties of TlGaTe2 Single Crystals under Hydrostatic Pressure

2011 ◽  
Vol 2011 ◽  
pp. 1-5
Author(s):  
Solmaz N. Mustafaeva ◽  
Shafag G. Gasymov ◽  
Elmira M. Kerimova ◽  
MirSalim M. Asadov
Keyword(s):  
Hydrostatic Pressure ◽  
Electrical Properties ◽  
Low Temperature ◽  
Single Crystal ◽  
Single Crystals ◽  
Considerable Increase ◽  
Localized States ◽  
Electrical Measurements ◽  
Effect Of Hydrostatic Pressure ◽  
Dc Electrical Properties

The effect of hydrostatic pressure (up to 0.82 GPa) on the electric properties of chain TlGaTe2 single crystals has been investigated in the temperature range 77–296 K. It has been shown that pressure leads to a considerable increase of conductivity (σ⊥) across the chains of TlGaTe2 single crystals. Parameters of localized states in the band gap of TlGaTe2 single crystal according to the low-temperature electrical measurements were obtained at various pressures.

Effect of Hydrostatic Pressure on the Dielectric Properties of PMN-0.31PT Single Crystal

2006 ◽  
Vol 339 (1) ◽  
pp. 75-84 ◽  
Author(s):  
Andrzej Hilczer ◽  
Marek Szafrański ◽  
Alexei Bokov ◽  
Zuo-Guang Ye
Keyword(s):  
Dielectric Properties ◽  
Hydrostatic Pressure ◽  
Single Crystal ◽  
Effect Of Hydrostatic Pressure
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