Spectral properties of polarized light from semipolar grown InGaN quantum wells at low temperatures

2011 ◽  
Vol 9 (3-4) ◽  
pp. 700-703 ◽  
Author(s):  
L. Schade ◽  
U. T. Schwarz ◽  
T. Wernicke ◽  
S. Ploch ◽  
M. Weyers ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Low Temperatures ◽  
Spectral Properties ◽  
Polarized Light ◽  
Ingan Quantum Wells

scholarly journals Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes

Materials ◽  
2019 ◽  
Vol 12 (16) ◽  
pp. 2583
Author(s):  
Marcin Sarzyński ◽  
Ewa Grzanka ◽  
Szymon Grzanka ◽  
Grzegorz Targowski ◽  
Robert Czernecki ◽  
...  
Keyword(s):  
Growth Rate ◽  
Quantum Wells ◽  
Low Temperatures ◽  
Chemical Vapor ◽  
Direction Parallel ◽  
Step Flow ◽  
Stripe Width ◽  
Wavelength Emission ◽  
Ingan Quantum Wells ◽  
Made In

InGaN quantum wells were grown using metalorganic chemical vapor phase epitaxy (vertical and horizontal types of reactors) on stripes made on GaN substrate. The stripe width was 5, 10, 20, 50, and 100 µm and their height was 4 and 1 µm. InGaN wells grown on stripes made in the direction perpendicular to the off-cut had a rough morphology and, therefore, this azimuth of stripes was not further explored. InGaN wells grown on the stripes made in the direction parallel to the GaN substrate off-cut had a step-flow-like morphology. For these samples (grown at low temperatures), we found out that the InGaN growth rate was higher for the narrower stripes. The higher growth rate induces a higher indium incorporation and a longer wavelength emission in photoluminescence measurements. This phenomenon is very clear for the 4 µm high stripes and less pronounced for the shallower 1 µm high stripes. The dependence of the emission wavelength on the stripe width paves a way to multicolor emitters.

scholarly journals The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Mikolaj Grabowski ◽  
Ewa Grzanka ◽  
Szymon Grzanka ◽  
Artur Lachowski ◽  
Julita Smalc-Koziorowska ◽  
...  
Keyword(s):  
Quantum Wells ◽  
High Temperatures ◽  
Point Defects ◽  
X Ray Diffraction ◽  
Helium Ions ◽  
X Ray ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
The Impact ◽  
Ingan Quantum Wells

AbstractThe aim of this paper is to give an experimental evidence that point defects (most probably gallium vacancies) induce decomposition of InGaN quantum wells (QWs) at high temperatures. In the experiment performed, we implanted GaN:Si/sapphire substrates with helium ions in order to introduce a high density of point defects. Then, we grew InGaN QWs on such substrates at temperature of 730 °C, what caused elimination of most (but not all) of the implantation-induced point defects expanding the crystal lattice. The InGaN QWs were almost identical to those grown on unimplanted GaN substrates. In the next step of the experiment, we annealed samples grown on unimplanted and implanted GaN at temperatures of 900 °C, 920 °C and 940 °C for half an hour. The samples were examined using Photoluminescence, X-ray Diffraction and Transmission Electron Microscopy. We found out that the decomposition of InGaN QWs started at lower temperatures for the samples grown on the implanted GaN substrates what provides a strong experimental support that point defects play important role in InGaN decomposition at high temperatures.

Rational construction of staggered InGaN quantum wells for efficient yellow light-emitting diodes

2021 ◽  
Vol 118 (18) ◽  
pp. 182102
Author(s):  
Xiaoyu Zhao ◽  
Bin Tang ◽  
Liyan Gong ◽  
Junchun Bai ◽  
Jiafeng Ping ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Yellow Light ◽  
Light Emitting ◽  
Rational Construction ◽  
Ingan Quantum Wells

Role of Metal Vacancies in the Mechanism of Thermal Degradation of InGaN Quantum Wells

2021 ◽  
Vol 13 (6) ◽  
pp. 7476-7484
Author(s):  
Julita Smalc-Koziorowska ◽  
Ewa Grzanka ◽  
Artur Lachowski ◽  
Roman Hrytsak ◽  
Mikolaj Grabowski ◽  
...  
Keyword(s):  
Thermal Degradation ◽  
Quantum Wells ◽  
Metal Vacancies ◽  
Ingan Quantum Wells

Directly correlated microscopy of trench defects in InGaN quantum wells

2021 ◽  
pp. 113255
Author(s):  
T.J. O'Hanlon ◽  
F C-P. Massabuau ◽  
A. Bao ◽  
M.J. Kappers ◽  
R.A. Oliver
Keyword(s):  
Quantum Wells ◽  
Ingan Quantum Wells ◽  
Correlated Microscopy

Strain-induced indium clustering in non-polar a-plane InGaN quantum wells

2018 ◽  
Vol 145 ◽  
pp. 109-122 ◽  
Author(s):  
Ja Kyung Lee ◽  
Bumsu Park ◽  
Kyung Song ◽  
Woo Young Jung ◽  
Dmitry Tyutyunnikov ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Ingan Quantum Wells

Optical properties of extended and localized states in m-plane InGaN quantum wells

2013 ◽  
Vol 102 (10) ◽  
pp. 101102 ◽  
Author(s):  
S. Marcinkevičius ◽  
K. M. Kelchner ◽  
S. Nakamura ◽  
S. P. DenBaars ◽  
J. S. Speck
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Localized States ◽  
Ingan Quantum Wells

Exciton-related optical properties in zinc-blende GaN/InGaN quantum wells under hydrostatic pressure

2015 ◽  
Vol 252 (4) ◽  
pp. 670-677 ◽  
Author(s):  
C. M. Duque ◽  
A. L. Morales ◽  
M. E. Mora-Ramos ◽  
C. A. Duque
Keyword(s):  
Optical Properties ◽  
Hydrostatic Pressure ◽  
Quantum Wells ◽  
Zinc Blende ◽  
Ingan Quantum Wells
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