GaN on sapphire mesa technology

2012 ◽  
Vol 9 (3-4) ◽  
pp. 945-948 ◽  
Author(s):  
Patrick Herfurth ◽  
Yakiv Men ◽  
Rudolph Rösch ◽  
Jean-Francois Carlin ◽  
Nicolas Grandjean ◽  
...  
Keyword(s):  
Mesa Technology

scholarly journals First Demonstration of L-Band High-Power Limiter with GaN Schottky Barrier Diodes (SBDs) Based on Steep-Mesa Technology

Electronics ◽  
2021 ◽  
Vol 10 (4) ◽  
pp. 433
Author(s):  
Yue Sun ◽  
Xuanwu Kang ◽  
Shixiong Deng ◽  
Yingkui Zheng ◽  
Ke Wei ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
High Power ◽  
Microwave Power ◽  
High Performance ◽  
Continuous Wave ◽  
Power Level ◽  
High Electron ◽  
Scattering Parameter ◽  
Electrical Field Strength ◽  
Mesa Technology

Gallium nitride (GaN) has attracted increased attention because of superior material properties, such as high electron saturation velocity and high electrical field strength, which are promising for high-power microwave applications. We report on a high-performance vertical GaN-based Schottky barrier diode (SBD) and its demonstration in a microwave power limiter for the first time. The fabricated SBD achieved a very low differential specific on-resistance (RON,sp) of 0.21 mΩ·cm2, attributed to the steep-mesa technology, which assists in reducing the spacing between the edge of the anode and cathode to 2 μm. Meanwhile, a low leakage current of ~10−9 A/cm2@−10 V, a high forward current density of 9.4 kA/cm2 at 3 V in DC, and an ideality factor of 1.04 were achieved. Scattering parameter measurements showed that the insertion loss (S21) was lower than −3 dB until 3 GHz. In addition, a microwave power limiter circuit with two anti-parallel diodes was built and measured on an alumina substrate. The input power level reached 40 dBm (10 watts) in continuous-wave mode at 2 GHz, with a corresponding leakage power of 27.2 dBm (0.5 watts) at the output port of the limiter, exhibiting the great potential of GaN SBD in microwave power limiters.

Successful Preparation of High Frequency HBT by Integrated RTCVD Processes

1995 ◽  
Vol 387 ◽  
Author(s):  
G. Ritter ◽  
B. Tillack ◽  
D. Knoll
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
High Frequency ◽  
Bipolar Transistors ◽  
Doping Profile ◽  
60 Ghz ◽  
Base Current ◽  
Si Substrates ◽  
Mesa Technology ◽  
Oscillation Frequencies

AbstractComplete epitaxial Si-SiGe-Si- stacks with a defined doping profile for each component have been deposited on Si substrates from the system SiH4, GeH4, H2, B2H6, PH3 by RTCVD. The deposition has been carried out at a temperature of 650°C for Si and of 500°C for SiGe, respectively, both at a pressure of 2 mbar. The developed epitaxial process including an effective H2 in-situ preclean annealing has been integrated in a simple double mesa technology for the preparation of SiGe base heterojunction bipolar transistors (HBT). Despite the simplicity of the technology and the lithographical level allowing emitter dimensions of 2.3×2.5 μm2 only, test devices on 4” wafers reached transit frequencies fT and maximum oscillation frequencies fmax of higher than 60 GHz and 30 GHz, respectively. Besides, a low base current has been measýnl as proof for a good layer quality.

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