Influence of growth temperature on the twin formation of InN{10$ \bar 1 $3} on GaAs(110) by metalorganic vapor phase epitaxy

2011 ◽  
Vol 9 (3-4) ◽  
pp. 677-680
Author(s):  
Hisashi Murakami ◽  
Hyun-Chol Cho ◽  
Mayu Suematsu ◽  
Katsuhiko Inaba ◽  
Yoshinao Kumagai ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Growth Temperature ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Twin Formation

Studies of GaxIn1−xP layers grown by metalorganic vapor phase epitaxy; Effects of V/III ratio and growth temperature

1986 ◽  
Vol 77 (1-3) ◽  
pp. 367-373 ◽  
Author(s):  
A. Gomyo ◽  
K. Kobayashi ◽  
S. Kawata ◽  
I. Hino ◽  
T. Suzuki ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Growth Temperature ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Suppression of twin formation for the growth of InN(10-1-3) on GaAs(110) by metalorganic vapor phase epitaxy

2012 ◽  
Vol 10 (3) ◽  
pp. 472-475 ◽  
Author(s):  
Hisashi Murakami ◽  
Sae Takenaka ◽  
Tetsuro Hotta ◽  
Yoshinao Kumagai ◽  
Akinori Koukitu
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Twin Formation

Effect of growth temperature on structure properties of InN grown by pressurized-reactor metalorganic vapor phase epitaxy

2010 ◽  
Vol 8 (2) ◽  
pp. 482-484 ◽  
Author(s):  
Yuantao Zhang ◽  
Yuhuai Liu ◽  
Takeshi Kimura ◽  
Masaki Hirata ◽  
Kiattiwut Prasertusk ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Growth Temperature ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Structure Properties

High-resolution X-ray diffraction analysis of InN films grown by metalorganic vapor phase epitaxy

2007 ◽  
Vol 22 (3) ◽  
pp. 219-222
Author(s):  
W. J. Wang ◽  
K. Sugita ◽  
Y. Nagai ◽  
Y. Houchin ◽  
A. Hashimoto ◽  
...  
Keyword(s):  
High Resolution ◽  
Vapor Phase ◽  
Growth Temperature ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Crystalline Quality ◽  
X Ray Diffraction ◽  
X Ray ◽  
Symmetric Reflection

The growth temperature dependence of the InN film’s crystalline quality is reported. InN films are grown on sapphire substrates from 570 to 650 °C with low-temperature GaN buffers by metalorganic vapor phase epitaxy (MOVPE). The X-ray rocking curves and reciprocal space mappings of the symmetric reflection (0 0 0 2) and asymmetric reflection (1 0 1 2) are measured with high resolution X-ray diffraction. The results indicate that the crystallinity is sensitive to the growth temperature for MOVPE InN. At growth temperature 580 °C, highly crystalline InN film has been obtained, for which the full-width-at-half-maxima of (0 0 0 2) and (1 0 1 2) rocking curves are 24 and 28 arcmin, respectively. The crystalline quality deteriorates drastically when the growth temperature exceeds 600 °C. Combined with the carrier concentration and mobility, the approach to improve the quality of InN film by MOVPE is discussed.

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