GaSb-based semiconductor saturable absorber mirrors for mode-locking 2 µm semiconductor disk lasers

2011 ◽  
Vol 9 (2) ◽  
pp. 294-297 ◽  
Author(s):  
Jonna Paajaste ◽  
Soile Suomalainen ◽  
Riku Koskinen ◽  
Antti Härkönen ◽  
Günter Steinmeyer ◽  
...  
2005 ◽  
Vol 14 (03) ◽  
pp. 427-437 ◽  
Author(s):  
J.-B. LECOURT ◽  
B. ORTAÇ ◽  
M. GUÉZO ◽  
C. LABBÉ ◽  
H. FOLLIOT ◽  
...  

Erbium-doped unidirectional fiber ring laser has been passively mode-locked with a novel ultra-fast semiconductor saturable absorber used in transmission. The structure is based on InGaAs/InP multiple quantum wells grown on an InP substrate. Different structures with recovery time down to picosecond have been tested. Relaxation time reduction have been obtained by iron doping. With such structures, detrimental regimes such as Q-switch and Q-switch/ModeLock regimes have been avoided. Solitonic and slightly stretched-pulse dispersion regimes have been tested. The laser delivers for both, completely self-starting picosecond pulses of 8 mW maximum average output power at a repetition rate around 25 MHz.


2013 ◽  
Vol 40 (6) ◽  
pp. 0602002
Author(s):  
韩克祯 Han Kezhen ◽  
侯佳 Hou Jia ◽  
杨克建 Yang Kejian ◽  
张百涛 Zhang Baitao ◽  
何京良 He Jingliang

2020 ◽  
Vol 59 (7) ◽  
pp. 072003
Author(s):  
J. W. Tang ◽  
R. Xu ◽  
W. C. Yao ◽  
W. Zhou ◽  
J. Wang ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document