Organic near-infrared photodiodes containing a wide-bandgap polymer and an n-type dopant in the active layer

2011 ◽  
Vol 8 (9) ◽  
pp. 2907-2910 ◽  
Author(s):  
Naoki Ohtani ◽  
Kiichiro Nakajima ◽  
Ken-ichi Bando
Keyword(s):  
Active Layer ◽  
Near Infrared ◽  
Wide Bandgap ◽  
Infrared Photodiodes ◽  
Wide Bandgap Polymer

scholarly journals The Effect of Nitrogen Incorporation on the Optical Properties of Si-Rich a-SiCx Films Deposited by VHF PECVD

Micromachines ◽  
2021 ◽  
Vol 12 (6) ◽  
pp. 637
Author(s):  
Hongliang Li ◽  
Zewen Lin ◽  
Yanqing Guo ◽  
Jie Song ◽  
Rui Huang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Near Infrared ◽  
Chemical Vapor ◽  
Wide Bandgap ◽  
Nonradiative Recombination ◽  
Very High Frequency ◽  
N Content ◽  
High Frequency Plasma ◽  
Frequency Plasma ◽  
N Incorporation

The influence of N incorporation on the optical properties of Si-rich a-SiCx films deposited by very high-frequency plasma-enhanced chemical vapor deposition (VHF PECVD) was investigated. The increase in N content in the films was found to cause a remarkable enhancement in photoluminescence (PL). Relative to the sample without N incorporation, the sample incorporated with 33% N showed a 22-fold improvement in PL. As the N content increased, the PL band gradually blueshifted from the near-infrared to the blue region, and the optical bandgap increased from 2.3 eV to 5.0 eV. The enhancement of PL was suggested mainly from the effective passivation of N to the nonradiative recombination centers in the samples. Given the strong PL and wide bandgap of the N incorporated samples, they were used to further design an anti-counterfeiting label.

Near-infrared photon upconversion devices based on GaNAsSb active layer lattice matched to GaAs

2009 ◽  
Vol 94 (9) ◽  
pp. 093504 ◽  
Author(s):  
Y. Yang ◽  
W. Z. Shen ◽  
H. C. Liu ◽  
S. R. Laframboise ◽  
S. Wicaksono ◽  
...  
Keyword(s):  
Active Layer ◽  
Near Infrared ◽  
Infrared Photon ◽  
Lattice Matched

A dithienobenzothiadiazole-quaterthiophene wide bandgap polymer enables non-fullerene based polymer solar cells with over 15% efficiency

Polymer ◽  
2021 ◽  
pp. 124193
Author(s):  
Zesheng Zhang ◽  
Feilong Pan ◽  
Mei Luo ◽  
Dong Yuan ◽  
Haizhen Liu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Polymer Solar Cells ◽  
Wide Bandgap ◽  
Wide Bandgap Polymer

Side-chain engineering for efficient non-fullerene polymer solar cells based on a wide-bandgap polymer donor

2017 ◽  
Vol 5 (19) ◽  
pp. 9204-9209 ◽  
Author(s):  
Qunping Fan ◽  
Wenyan Su ◽  
Xia Guo ◽  
Yan Wang ◽  
Juan Chen ◽  
...  
Keyword(s):  
Solar Cells ◽  
Polymer Solar Cells ◽  
Wide Bandgap ◽  
Side Chain ◽  
Wide Bandgap Polymer

Non-fullerene polymer solar cells based on a wide-bandgap polymer, PSBZ, exhibited a PCE of up to 10.5% with a high Jsc of 19.0 mA cm−2.

The Time Response of Exponential Doping NEA InGaAs Photocathode Applied to near Infrared Streak Cameras

2011 ◽  
Vol 415-417 ◽  
pp. 1403-1406
Author(s):  
Wei Dong Tang ◽  
Wen Zheng Yang ◽  
Zhi Peng Cai ◽  
Chuan Dong Sun
Keyword(s):  
Electric Field ◽  
Quantum Efficiency ◽  
Active Layer ◽  
Near Infrared ◽  
Streak Camera ◽  
Numerical Results ◽  
Time Response ◽  
Transport Time ◽  
Minority Carriers

An exponential doping NEA InGaAs photocathode is theoretically proposed to apply in the near infrared streak camera. The photocathode time response is calculated and analyzed by using a photoelectron non-steady method. The numerical results show that the excited electrons in the InGaAs active layer is accelerated due to the built-in electric field induced by the exponential doping structure, which shortens the transport time of minority carriers in the photocathode and thus, the time response is greatly improved. In addition, the exponential doping InGaAs photocathode possesses time response of less than 10 picoseconds and near-infrared quantum efficiency of 10%.

A wide-bandgap polymer based on the alkylphenyl-substituted benzo[1,2-b:4,5-b′]dithiophene unit with high power conversion efficiency of over 11%

2018 ◽  
Vol 6 (34) ◽  
pp. 16529-16536 ◽  
Author(s):  
Xia Guo ◽  
Wanbin Li ◽  
Huan Guo ◽  
Bing Guo ◽  
Jingnan Wu ◽  
...  
Keyword(s):  
Power Conversion Efficiency ◽  
Layer Thickness ◽  
High Power ◽  
Conjugated Polymer ◽  
Power Conversion ◽  
Wide Bandgap ◽  
Active Layer Thickness ◽  
Large Area ◽  
High Power Conversion Efficiency ◽  
Wide Bandgap Polymer

A novel wide bandgap polymer PTZP with Eoptg of 2.01 eV was designed and synthesized. PSCs based on PTZP exhibited high PCE of 11.8%. PCEs of over 10% were obtained with an active layer thickness of 200 nm or an area of 0.81 cm2. PTZP was shown to be a promising conjugated polymer for the fabrication of efficient large area PSCs.

Understanding of Imine Substitution in Wide-Bandgap Polymer Donor-Induced Efficiency Enhancement in All-Polymer Solar Cells

2019 ◽  
Vol 31 (20) ◽  
pp. 8533-8542 ◽  
Author(s):  
Zhixiong Cao ◽  
Jiale Chen ◽  
Shengjian Liu ◽  
Minchao Qin ◽  
Tao Jia ◽  
...  
Keyword(s):  
Solar Cells ◽  
Polymer Solar Cells ◽  
Wide Bandgap ◽  
Efficiency Enhancement ◽  
Wide Bandgap Polymer

Design of a New Fused-Ring Electron Acceptor with Excellent Compatibility to Wide-Bandgap Polymer Donors for High-Performance Organic Photovoltaics

2018 ◽  
Vol 30 (26) ◽  
pp. 1800403 ◽  
Author(s):  
Wenrui Liu ◽  
Jianyun Zhang ◽  
Zichun Zhou ◽  
Dongyang Zhang ◽  
Yuan Zhang ◽  
...  
Keyword(s):  
Electron Acceptor ◽  
Organic Photovoltaics ◽  
High Performance ◽  
Wide Bandgap ◽  
Fused Ring ◽  
Wide Bandgap Polymer
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