Strain relaxation in InxGa1-xN/GaN quantum well structures

2011 ◽  
Vol 8 (7-8) ◽  
pp. 2034-2037 ◽  
Author(s):  
Ahmed M. Emar ◽  
E. Acar Berkman ◽  
J. Zavada ◽  
Nadia A. El-Masry ◽  
S. M. Bedair
Keyword(s):  
Quantum Well ◽  
Strain Relaxation ◽  
Quantum Well Structures

scholarly journals Strain relaxation in In0.2Ga0.8As/GaAs quantum-well structures by x-ray diffraction and photoluminescence

2000 ◽  
Vol 87 (3) ◽  
pp. 1251-1254 ◽  
Author(s):  
J. F. Chen ◽  
P. Y. Wang ◽  
J. S. Wang ◽  
N. C. Chen ◽  
X. J. Guo ◽  
...  
Keyword(s):  
Quantum Well ◽  
Strain Relaxation ◽  
X Ray Diffraction ◽  
Quantum Well Structures ◽  
X Ray

Partial strain relaxation effects on polarization anisotropy of semipolar (112¯2) InGaN/GaN quantum well structures

2013 ◽  
Vol 103 (22) ◽  
pp. 221108 ◽  
Author(s):  
Seoung-Hwan Park ◽  
Dhaneshwar Mishra ◽  
Y. Eugene Pak ◽  
Chang Young Park ◽  
Seung-Hyun Yoo ◽  
...  
Keyword(s):  
Quantum Well ◽  
Strain Relaxation ◽  
Polarization Anisotropy ◽  
Quantum Well Structures ◽  
Relaxation Effects

Elastic and plastic strain relaxation in ultrathin CdS/ZnS quantum-well structures grown by molecular-beam epitaxy

1997 ◽  
Vol 56 (19) ◽  
pp. 12369-12374 ◽  
Author(s):  
M. Hetterich ◽  
M. Grün ◽  
W. Petri ◽  
C. Märkle ◽  
C. Klingshirn ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Plastic Strain ◽  
Quantum Well ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
Quantum Well Structures

Misfit dislocations in green-emitting InGaN/GaN quantum well structures

2005 ◽  
Vol 892 ◽  
Author(s):  
Pedro MFJ Costa ◽  
Ranjan Datta ◽  
Menno J Kappers ◽  
Mary E Vickers ◽  
Colin J Humphreys
Keyword(s):  
Quantum Well ◽  
Strain Relaxation ◽  
Vapour Phase ◽  
Misfit Dislocations ◽  
Single Quantum Well ◽  
Vapour Phase Epitaxy ◽  
Quantum Well Structures ◽  
Transmission Electron ◽  
Metal Organic ◽  
Organic Vapour

AbstractMisfit dislocations (MDs) have been observed using transmission electron microscopy (TEM) in InGaN/GaN quantum well (MQW) structures grown under different metal-organic vapour phase epitaxy (MOVPE) regimes and with In-contents equal to or higher than 20%. These dislocations are even observed in a single quantum well 3 nm thick with an In-content of 22%. Conversely, no MDs were observed in QW structures with an In-content of 16%. The presence of MDs in the QW stack leads to strain relaxation which has been confirmed in the indium-rich structures by high resolution X-ray diffraction (HRXRD).

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