Control of in-plane epitaxial relationship of c -plane AlN layers grown on a -plane sapphire substrates by hydride vapor phase epitaxy

2011 ◽  
Vol 8 (7-8) ◽  
pp. 2028-2030 ◽  
Author(s):  
Jumpei Tajima ◽  
Rie Togashi ◽  
Hisashi Murakami ◽  
Yoshinao Kumagai ◽  
Kazuya Takada ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Epitaxial Relationship ◽  
Sapphire Substrates ◽  
Relationship Of

scholarly journals Hydride Vapor-Phase Epitaxy of c-Plane AlGaN Layers on Patterned Sapphire Substrates

2013 ◽  
Vol 43 (4) ◽  
pp. 814-818 ◽  
Author(s):  
E. Richter ◽  
S. Fleischmann ◽  
D. Goran ◽  
S. Hagedorn ◽  
W. John ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Sapphire Substrates ◽  
Patterned Sapphire Substrates

High Quality AlN Layer Grown on Patterned Sapphire Substrates by Hydride Vapor-Phase Epitaxy: A Route for Cost Efficient AlN Templates for Deep Ultraviolet Light Devices

2021 ◽  
Vol 21 (9) ◽  
pp. 4881-4885
Author(s):  
Seung-Jae Lee ◽  
Seong-Ran Jeon ◽  
Young Ho Song ◽  
Young-Jun Choi ◽  
Hae-Gon Oh ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Threading Dislocation ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Order Of Magnitude ◽  
Cost Efficient ◽  
Patterned Sapphire Substrates

We report the characteristics of AlN epilayers grown directly on cylindrical-patterned sapphire substrates (CPSS) by hydride vapor-phase epitaxy (HVPE). To evaluate the effect of CPSS, we analyzed the threading dislocation densities (TDDs) of AlN films grown simultaneously on CPSS and flat sapphire substrate (FSS) by transmission electron microscopy (TEM). The corresponding TDD is measured to be 5.69 x 108 cm−2 for the AlN sample grown on the CPSS that is almost an order of magnitude lower than the value of 3.43 × 109 cm−2 on the FSS. The CPSS contributes to reduce the TDs originated from the AlN/sapphire interface via bending the TDs by lateral growth during the coalescence process. In addition, the reduction of direct interface area between AlN and sapphire by CPSS reduce the generation of TDs.

scholarly journals Reduction of Defects in AlGaN Grown on Nanoscale-Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy

Materials ◽  
2017 ◽  
Vol 10 (6) ◽  
pp. 605 ◽  
Author(s):  
Chi-Tsung Tasi ◽  
Wei-Kai Wang ◽  
Tsung-Yen Tsai ◽  
Shih-Yung Huang ◽  
Ray-Hua Horng ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Sapphire Substrates ◽  
Patterned Sapphire Substrates

Influence of source gas supply sequence on hydride vapor phase epitaxy of AlN on (0001) sapphire substrates

2012 ◽  
Vol 360 ◽  
pp. 197-200 ◽  
Author(s):  
Rie Togashi ◽  
Toru Nagashima ◽  
Manabu Harada ◽  
Hisashi Murakami ◽  
Yoshinao Kumagai ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Sapphire Substrates ◽  
Gas Supply

High quality thin GaN templates grown by hydride vapor phase epitaxy on sapphire substrates

2006 ◽  
Vol 88 (24) ◽  
pp. 241914 ◽  
Author(s):  
D. Martin ◽  
J. Napierala ◽  
M. Ilegems ◽  
R. Butté ◽  
N. Grandjean
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
High Quality ◽  
Sapphire Substrates

Temperature dependence of InN growth on (0001) sapphire substrates by atmospheric pressure hydride vapor phase epitaxy

2010 ◽  
Vol 7 (7-8) ◽  
pp. 2022-2024 ◽  
Author(s):  
Yoshinao Kumagai ◽  
Hirokazu Adachi ◽  
Aya Otake ◽  
Yoshihiro Higashikawa ◽  
Rie Togashi ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Vapor Phase ◽  
Atmospheric Pressure ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Sapphire Substrates

a-plane GaN grown on r-plane sapphire substrates by hydride vapor phase epitaxy

2007 ◽  
Vol 300 (1) ◽  
pp. 186-189 ◽  
Author(s):  
T. Zhu ◽  
D. Martin ◽  
R. Butté ◽  
J. Napierala ◽  
N. Grandjean
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Sapphire Substrates

Growth of thin protective AlN layers on sapphire substrates at 1065 °C for hydride vapor phase epitaxy of AlN above 1300 °C

2008 ◽  
Vol 5 (6) ◽  
pp. 1515-1517 ◽  
Author(s):  
J. Tajima ◽  
Y. Kubota ◽  
R. Togashi ◽  
H. Murakami ◽  
Y. Kumagai ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Sapphire Substrates
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