Atomic-layer-deposited Ir thin film as a novel diffusion barrier layer in Cu interconnection

2010 ◽  
Vol 8 (3) ◽  
pp. 891-894 ◽  
Author(s):  
Yong Hwan Lim ◽  
Hana Yoo ◽  
Bum Ho Choi ◽  
Jong Ho Lee ◽  
Ho-Nyun Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Barrier Layer ◽  
Diffusion Barrier ◽  
Atomic Layer ◽  
Diffusion Barrier Layer

scholarly journals Titanium-based thin film metallic glass as diffusion barrier layer for PbTe-based thermoelectric modules

APL Materials ◽  
2019 ◽  
Vol 7 (1) ◽  
pp. 013001 ◽  
Author(s):  
Chia-Chi Yu ◽  
Hsin-jay Wu ◽  
Matthias T. Agne ◽  
Ian T. Witting ◽  
Ping-Yuan Deng ◽  
...  
Keyword(s):  
Thin Film ◽  
Metallic Glass ◽  
Barrier Layer ◽  
Diffusion Barrier ◽  
Thermoelectric Modules ◽  
Diffusion Barrier Layer

Electrodeposition of CoMoP thin film as diffusion barrier layer for ULSI applications

2009 ◽  
Vol 203 (24) ◽  
pp. 3692-3700 ◽  
Author(s):  
Z. Abdel Hamid ◽  
A. Abdel Aal ◽  
Ali Shaaban ◽  
H.B. Hassan
Keyword(s):  
Thin Film ◽  
Barrier Layer ◽  
Diffusion Barrier ◽  
Diffusion Barrier Layer

Thin-film interactions and their relevance to electronic packaging

1987 ◽  
Vol 2 (5) ◽  
pp. 697-703 ◽  
Author(s):  
Chin-An Chang
Keyword(s):  
Thin Film ◽  
Barrier Layer ◽  
Diffusion Barrier ◽  
Reaction Mechanisms ◽  
Electronic Packaging ◽  
Alloy Formation ◽  
Diffusion Barrier Layer ◽  
Basic Reaction ◽  
Electronic Technologies

Thin-film interactions have been increasingly important to various aspects of electronic technologies, including devices and packaging. Extensive outdiffusion and alloy formation, for example, can be detrimental to the yield and reliability of the parts fabricated. Understanding such interactions, and their dependence on various factors, continues to be a challenge to thin-film scientists. Several aspects related to thin-film interactions are described in this paper: a review of the ambient effects that provides an understanding of the basic reaction mechanisms at the interface; an illustration of concerns upon choosing a diffusion barrier layer, and reaction across such a layer; and the effect of undesired outdiffusion on the solder spread related to joining.

scholarly journals Plasma-Enhanced Atomic Layer Deposition of TiN Thin Films as an Effective Se Diffusion Barrier for CIGS Solar Cells

Nanomaterials ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 370
Author(s):  
Hyun-Jae Woo ◽  
Woo-Jae Lee ◽  
Eun-Kyong Koh ◽  
Seung Il Jang ◽  
Shinho Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Barrier Layer ◽  
Diffusion Barrier ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Diffusion Barrier Layer ◽  
Tin Thin Films ◽  
Cigs Solar Cells ◽  
Tin Diffusion Barrier

Plasma-enhanced atomic layer deposition (PEALD) of TiN thin films were investigated as an effective Se diffusion barrier layer for Cu (In, Ga) Se2 (CIGS) solar cells. Before the deposition of TiN thin film on CIGS solar cells, a saturated growth rate of 0.67 Å/cycle was confirmed using tetrakis(dimethylamido)titanium (TDMAT) and N2 plasma at 200 °C. Then, a Mo (≈30 nm)/PEALD-TiN (≈5 nm)/Mo (≈600 nm) back contact stack was fabricated to investigate the effects of PEALD-TiN thin films on the Se diffusion. After the selenization process, it was revealed that ≈5 nm-thick TiN thin films can effectively block Se diffusion and that only the top Mo layer prepared on the TiN thin films reacted with Se to form a MoSe2 layer. Without the TiN diffusion barrier layer, however, Se continuously diffused along the grain boundaries of the entire Mo back contact electrode. Finally, the adoption of a TiN diffusion barrier layer improved the photovoltaic efficiency of the CIGS solar cell by approximately 10%.

Creep Deformation / Oxidation Behavior of Re-Cr-Ni Diffusion Barrier Coated Hastelloy-X at 970°C in Air

2008 ◽  
Vol 595-598 ◽  
pp. 107-116 ◽  
Author(s):  
Shigenari Hayashi ◽  
Mikihiro Sakata ◽  
Shigeharu Ukai ◽  
Toshio Narita
Keyword(s):  
Grain Size ◽  
Grain Boundary ◽  
Barrier Layer ◽  
Creep Deformation ◽  
Diffusion Barrier ◽  
Hastelloy X ◽  
Alloy Substrate ◽  
Barrier Coating ◽  
Diffusion Barrier Layer ◽  
Coated Alloy

High temperature oxidation / creep deformation behavior of a diffusion barrier coated Hastelloy-X alloy, with large grain size ~500μm, was investigated at 970°C in air with external tensile stress of 22.5, 27.5, 32, and 40MPa. The diffusion barrier coating formed on Hastelloy-X consisted of a duplex structure with an inner diffusion barrier layer of Re-Cr-Ni alloy, and an outer oxidation resistant layer of β-NiAl. Un coated bare Hastelloy-X alloy with same grain size was also examined under the same conditions for comparison. The composition of the as-coated diffusion barrier coating was (15~21)Ni, (33~37)Cr, (30~33)Re, (11~15)Mo, and (9~14)Fe. This composition corresponds to σ-phase in the Ni-Cr-Re ternary system, which is known as a topologically close packed, TCP phase. The composition of this diffusion barrier layer did not change during the experiment. The oxide scales formed after creep testing on the coated and un-coated alloy surfaces were needle-like θ-Al2O3, and Cr2O3 with small amount of FeCr2O4, respectively. Grain boundary oxidation was also found in the subsurface region of the un-coated alloy. The Al2O3 scale exhibited severe spallation, and many cracks were formed perpendicular to the stress direction. However, no spallation or cracks were observed in the Cr2O3. The creep rupture times for the diffusion barrier coated alloy were about 1.5 times longer than those for bare alloy at all creep stress conditions. The fracture surface after rupture indicates that fracture occurred along alloy grain boundaries in both the coated and un-coated alloy substrate. Many cavities and cracks were observed within the diffusion barrier coated alloy substrate. These cavities and cracks tended to propagate from the substrate toward the diffusion barrier layer, and then stopped at the Re-Cr-Ni / β-NiAl interface. Cracks formed in the un-coated alloy initiated at the tip of grain boundary oxides, and propagated into alloy substrate. However no major cavities were observed inside the alloy substrate. The stress index, n, for both specimens was about 6, and this indicates that the deformation mechanism of both samples was dislocation creep. These results suggest that the Re-Cr-Ni diffusion barrier layer acts as a barrier against the movement of dislocations at the interface with the alloy surface.

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