Comparison of time-resolved photoluminescence from InGaN single quantum wells grown on nonpolar and semipolar bulk GaN substrates

2009 ◽  
Vol 6 (S2) ◽  
pp. S800-S803 ◽  
Author(s):  
Gregory A. Garrett ◽  
Hongen Shen ◽  
Michael Wraback ◽  
Anurag Tyagi ◽  
Mathew C. Schmidt ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Single Quantum ◽  
Time Resolved ◽  
Bulk Gan ◽  
Time Resolved Photoluminescence

Well-width dependent studies of InGaN-GaN single-quantum wells using time-resolved photoluminescence techniques

1997 ◽  
Vol 3 (3) ◽  
pp. 731-738 ◽  
Author(s):  
Chi-Kuang Sun ◽  
S. Keller ◽  
Tien-Lung Chiu ◽  
G. Wang ◽  
M.S. Minsky ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Single Quantum ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

Time-resolved photoluminescence studies of InGaN/GaN single-quantum-wells at room temperature

1997 ◽  
Vol 71 (4) ◽  
pp. 425-427 ◽  
Author(s):  
C.-K. Sun ◽  
T.-L. Chiu ◽  
S. Keller ◽  
G. Wang ◽  
M. S. Minsky ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Single Quantum ◽  
Time Resolved ◽  
Photoluminescence Studies ◽  
Time Resolved Photoluminescence

Preparation and Time-Resolved Photoluminescence Study of CdTe/Cd1-xMnxTe Single Quantum Wells

1993 ◽  
Vol 32 (Part 2, No. 2B) ◽  
pp. L226-L228 ◽  
Author(s):  
Hiroyuki Akinaga ◽  
Yutaka Shirai ◽  
Kôki Takita ◽  
Takeshi Nakayama ◽  
Fujio Minami ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Single Quantum ◽  
Time Resolved ◽  
Photoluminescence Study ◽  
Time Resolved Photoluminescence

Time-resolved photoluminescence and steady-state optical studies of GaInNAs and GaInAs single quantum wells

2007 ◽  
Vol 4 (2) ◽  
pp. 667-670 ◽  
Author(s):  
Y. Sun ◽  
L. Lombez ◽  
P. F. Braun ◽  
B. Ulug ◽  
A. Ulug ◽  
...  
Keyword(s):  
Steady State ◽  
Quantum Wells ◽  
Single Quantum ◽  
Optical Studies ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

Spontaneous and Stimulated Recombination in the Nitrides

1996 ◽  
Vol 449 ◽  
Author(s):  
A. Hangleiter ◽  
F. Scholz ◽  
V. Härle ◽  
J. S. Im ◽  
G. Frankowsky
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Optical Gain ◽  
Stimulated Emission ◽  
Time Resolved ◽  
Double Heterostructures ◽  
Bulk Gan ◽  
Photoluminescence Studies ◽  
Excitonic Effects ◽  
Time Resolved Photoluminescence

ABSTRACTBoth spontaneous and stimulated emission processes are essential ingredients for constructing a laser from the nitrides. Based on our picosecond time-resolved photoluminescence studies we show that spontaneous radiative recombination is strongly influenced by excitonic effects, both in bulk GaN and in quantum wells. Particularly in quantum wells, localization of excitons plays an important role. We have studied the optical gain spectra in GaInN/GaN and GaN/AlGaN double heterostructures and quantum wells, grown by LP-MOVPE, using the stripe excitation method. Both room temperature and low temperature measurements were performed. Based on our results, we discuss the physical mechanism of optical gain in the nitrides as well as consequences for laser operation. We show that localization or, equivalently, the formation of quantum dot like structures, governs the optical gain mechanism in the nitrides.

Optical Study of Localized and Delocalized States in GaAsN/GaAs

2003 ◽  
Vol 798 ◽  
Author(s):  
Z. Y. Xu ◽  
X. D. Luo ◽  
X. D. Yang ◽  
P. H. Tan ◽  
C. L. Yang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Rapid Thermal Annealing ◽  
Short Pulse ◽  
Selective Excitation ◽  
Excitation Power ◽  
Pulse Excitation ◽  
Optical Study ◽  
Time Resolved ◽  
Exciton Localization ◽  
Time Resolved Photoluminescence

ABSTRACTTaking advantages of short pulse excitation and time-resolved photoluminescence (PL), we have studied the exciton localization effect in a number of GaAsN alloys and GaAsN/GaAs quantum wells (QWs). In the PL spectra, an extra transition located at the higher energy side of the commonly reported N-related emissions is observed. By measuring PL dependence on temperature and excitation power along with PL dynamics study, the new PL peak has been identified as a transition of the band edge-related recombination in dilute GaAsN alloy and delocalized transition in QWs. Using selective excitation PL we further attribute the localized emission in QWs to the excitons localized at the GaAsN/GaAs interfaces. This interface-related exciton localization could be greatly reduced by a rapid thermal annealing.

Evaluation of hole-spin superposition in GaAs/AlGaAs quantum wells through time-resolved photoluminescence measurements

2014 ◽  
Vol 104 (25) ◽  
pp. 252406
Author(s):  
Tetsu Ito ◽  
Hideki Gotoh ◽  
Masao Ichida ◽  
Hiroaki Ando
Keyword(s):  
Quantum Wells ◽  
Time Resolved ◽  
Time Resolved Photoluminescence
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