Highly luminescent InxGa1-xN thin films grown over the entire composition range by energetic neutral atom beam lithography & epitaxy (ENABLE)

2009 ◽  
Vol 6 (S2) ◽  
pp. S409-S412 ◽  
Author(s):  
T. L. Williamson ◽  
M. A. Hoffbauer ◽  
K. M. Yu ◽  
L. A. Reichertz ◽  
M. E. Hawkridge ◽  
...  
Keyword(s):  
Thin Films ◽  
Neutral Atom ◽  
Composition Range ◽  
Entire Composition Range ◽  
Atom Beam ◽  
Energetic Neutral Atom

scholarly journals Structural and Elastic Properties of α‐(Al x Ga 1− x ) 2 O 3 Thin Films on (11.0) Al 2 O 3 Substrates for the Entire Composition Range

2020 ◽  
pp. 2000394 ◽  
Author(s):  
Anna Hassa ◽  
Philipp Storm ◽  
Max Kneiß ◽  
Daniel Splith ◽  
Holger von Wenckstern ◽  
...  
Keyword(s):  
Thin Films ◽  
Elastic Properties ◽  
Composition Range ◽  
Entire Composition Range

Optical properties of InGaN thin films in the entire composition range

2018 ◽  
Vol 123 (12) ◽  
pp. 125101 ◽  
Author(s):  
S. A. Kazazis ◽  
E. Papadomanolaki ◽  
M. Androulidaki ◽  
M. Kayambaki ◽  
E. Iliopoulos
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Composition Range ◽  
Entire Composition Range

scholarly journals Correction to: Structural and Elastic Properties of α‐(Al x Ga 1−x ) 2 O 3 Thin Films on (11.0) Al 2 O 3 Substrates for the Entire Composition Range

2021 ◽  
Vol 258 (2) ◽  
pp. 2000632
Author(s):  
Anna Hassa ◽  
Philipp Storm ◽  
Max Kneiß ◽  
Daniel Splith ◽  
Holger von Wenckstern ◽  
...  
Keyword(s):  
Thin Films ◽  
Elastic Properties ◽  
Composition Range ◽  
Entire Composition Range

Energetic Neutral Atom Beam Lithography/Epitaxy for Nanoscale Device Fabrication

2005 ◽  
Vol 872 ◽  
Author(s):  
Elshan A. Akhadov ◽  
Alexander H. Mueller ◽  
Mark A. Hoffbauer
Keyword(s):  
Neutral Atom ◽  
Polymeric Materials ◽  
Device Fabrication ◽  
Oxidation Products ◽  
Atom Beam ◽  
Nanoscale Device ◽  
Energetic Neutral Atom ◽  
Nanoscale Structures ◽  
Versatile Technique ◽  
Nanoscale Features

AbstractEnergetic neutral atom beam lithography/epitaxy (ENABLE) is a versatile technique recently developed for patterning nanoscale features into polymer substrates. ENABLE achieves the direct activation of surface chemical reactions by exposing substrates to a beam of energetic neutral atoms. Polymers that form volatile oxidation products may be anisotropically etched using a neutral beam of oxygen atoms at rates exceeding 100 nm/min, avoiding problems associated with charged species inherent to other etching techniques. We report on a top-down approach for producing high-aspect-ratio nanoscale structures in polymeric materials using ENABLE. Masking techniques suitable for ENABLE etching are discussed along with applications involving the rapid production of nanoscale features over large areas.

Strength of the Termination Shock Inferred from the Globally Distributed Energetic Neutral Atom Flux from IBEX

2021 ◽  
Vol 254 (2) ◽  
pp. 32
Author(s):  
Bishwas L. Shrestha ◽  
Eric J. Zirnstein ◽  
Jacob Heerikhuisen ◽  
Gary P. Zank
Keyword(s):  
Neutral Atom ◽  
Termination Shock ◽  
Energetic Neutral Atom ◽  
Atom Flux ◽  
Globally Distributed
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