Direct observation of crosssectional potential distribution in GaN-based MIS structures by Kelvin-probe force microscopy

2009 ◽  
Vol 6 (S2) ◽  
pp. S968-S971 ◽  
Author(s):  
Masamitsu Kaneko ◽  
Tatsuya Fujishima ◽  
Kentaro Chikamatsu ◽  
Atsushi Yamaguchi ◽  
Junjiroh Kikawa ◽  
...  
Keyword(s):  
Direct Observation ◽  
Potential Distribution ◽  
Kelvin Probe Force Microscopy ◽  
Kelvin Probe ◽  
Force Microscopy ◽  
Mis Structures

Potential distribution of Cu(In,Ga)(S,Se)2-solar cell cross-sections measured by Kelvin probe force microscopy

2005 ◽  
Vol 480-481 ◽  
pp. 177-182 ◽  
Author(s):  
Th. Glatzel ◽  
H. Steigert ◽  
S. Sadewasser ◽  
R. Klenk ◽  
M.Ch. Lux-Steiner
Keyword(s):  
Solar Cell ◽  
Cross Sections ◽  
Potential Distribution ◽  
Kelvin Probe Force Microscopy ◽  
Kelvin Probe ◽  
Force Microscopy

scholarly journals MOVPE-Grown Quantum Cascade Laser Structures Studied by Kelvin Probe Force Microscopy

Crystals ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 129
Author(s):  
Konstantin Ladutenko ◽  
Vadim Evtikhiev ◽  
Dmitry Revin ◽  
Andrey Krysa
Keyword(s):  
Quantum Cascade Laser ◽  
Potential Distribution ◽  
Voltage Drop ◽  
Core Region ◽  
Kelvin Probe Force Microscopy ◽  
Lasing Threshold ◽  
Linear Potential ◽  
Kelvin Probe ◽  
Force Microscopy ◽  
Quantum Cascade

A technique for direct study of the distribution of the applied voltage within a quantum cascade laser (QCL) has been developed. The detailed profile of the potential in the laser claddings and laser core region has been obtained by gradient scanning Kelvin probe force microscopy (KPFM) across the cleaved facets for two mid-infrared quantum cascade laser structures. An InGaAs/InAlAs quantum cascade device with InP claddings demonstrates a linear potential distribution across the laser core region with constant voltage drop across the doped claddings. By contrast, a GaAs/AlGaAs device with AlInP claddings has very uneven potential distribution with more than half of the voltage falling across the claddings and interfaces around the laser core, greatly increasing the overall voltage value necessary to achieve the lasing threshold. Thus, KPFM can be used to highlight design and fabrication flaws of QCLs.

scholarly journals Know your full potential: Quantitative Kelvin probe force microscopy on nanoscale electrical devices

2018 ◽  
Vol 9 ◽  
pp. 1809-1819 ◽  
Author(s):  
Amelie Axt ◽  
Ilka M Hermes ◽  
Victor W Bergmann ◽  
Niklas Tausendpfund ◽  
Stefan A L Weber
Keyword(s):  
Thin Film ◽  
Electric Fields ◽  
Cross Sections ◽  
Thin Film Transistors ◽  
Potential Distribution ◽  
Kelvin Probe Force Microscopy ◽  
Reference Structure ◽  
Full Potential ◽  
Kelvin Probe ◽  
Force Microscopy

In this study we investigate the influence of the operation method in Kelvin probe force microscopy (KPFM) on the measured potential distribution. KPFM is widely used to map the nanoscale potential distribution in operating devices, e.g., in thin film transistors or on cross sections of functional solar cells. Quantitative surface potential measurements are crucial for understanding the operation principles of functional nanostructures in these electronic devices. Nevertheless, KPFM is prone to certain imaging artifacts, such as crosstalk from topography or stray electric fields. Here, we compare different amplitude modulation (AM) and frequency modulation (FM) KPFM methods on a reference structure consisting of an interdigitated electrode array. This structure mimics the sample geometry in device measurements, e.g., on thin film transistors or on solar cell cross sections. In particular, we investigate how quantitative different KPFM methods can measure a predefined externally applied voltage difference between the electrodes. We found that generally, FM-KPFM methods provide more quantitative results that are less affected by the presence of stray electric fields compared to AM-KPFM methods.

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