Growth behaviour of InGaN/GaN self-assembled quantum dots with different growth conditions in horizontal MOCVD

2009 ◽  
Vol 6 (4) ◽  
pp. 797-801 ◽  
Author(s):  
Woo-Gwang Jung ◽  
Jae-Min Jang ◽  
Seung-Kyu Choi ◽  
Jin-Yeol Kim
Keyword(s):  
Quantum Dots ◽  
Growth Conditions ◽  
Growth Behaviour ◽  
Self Assembled

Self-assembled quantum dots and nanoholes by molecular beam epitaxial growth and atomically precise in situ etching

2002 ◽  
Vol 722 ◽  
Author(s):  
S. Kiravittaya ◽  
R. Songmuang ◽  
O. G. Schmidt
Keyword(s):  
Quantum Dots ◽  
Molecular Beam ◽  
Flat Surface ◽  
Local Strain ◽  
Growth Conditions ◽  
Etching Depth ◽  
Molecular Beam Epitaxial ◽  
Self Assembled ◽  
Molecular Beam Epitaxial Growth

AbstractEnsembles of homogeneous self-assembled quantum dots (QDs) and nanoholes are fabricated using molecular beam epitaxy in combination with atomically precise in situ etching. Self-assembled InAs QDs with height fluctuations of ±5% were grown using a very low indium growth rate on GaAs (001) substrate. If these dots are capped with GaAs at low temperature, strong room temperature emission at 1.3 νm with a linewidth of 21 meV from the islands is observed. Subsequently, we fabricate homogeneous arrays of nanoholes by in situ etching the GaAs surface of the capped InAs QDs with AsBr3. The depths of the nanoholes can be tuned over a range of 1-6 nm depending on the nominal etching depth and the initial capping layer thickness. We appoint the formation of nanoholes to a pronounced selectivity of the AsBr3 to local strain fields. The holes can be filled with InAs again such that an atomically flat surface is recovered. QDs in the second layer preferentially form at those sites, where the holes were initially created. Growth conditions for the second InAs layer can be chosen in such a way that lateral QD molecules form on a flat surface.

Study of growth behaviour and microstructure of epitaxially grown self-assembled Ge quantum dots on nanometer-scale patterned SiO2/Si(001) substrates

2009 ◽  
Vol 246 (4) ◽  
pp. 721-724 ◽  
Author(s):  
Tae-Sik Yoon ◽  
Hyun-Mi Kim ◽  
Ki-Bum Kim ◽  
Du Yeol Ryu ◽  
Thomas P. Russell ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Nanometer Scale ◽  
Growth Behaviour ◽  
Ge Quantum Dots ◽  
Self Assembled

Influence of growth conditions on the photoluminescence of self-assembled InAs/GaAs quantum dots

1999 ◽  
Vol 85 (4) ◽  
pp. 2355-2362 ◽  
Author(s):  
L. Chu ◽  
M. Arzberger ◽  
G. Böhm ◽  
G. Abstreiter
Keyword(s):  
Quantum Dots ◽  
Growth Conditions ◽  
Self Assembled

Controlling Growth of InAs/GaAs Self-Assembled Quantum Dots to Give 1.3 μm Room Temperature Emission

1999 ◽  
Vol 571 ◽  
Author(s):  
Surama Malik ◽  
Philip Siverns ◽  
David Childs ◽  
Christine Roberts ◽  
Jean-Michel Hartmann ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Excited States ◽  
Room Temperature ◽  
Growth Parameters ◽  
High Growth ◽  
Growth Conditions ◽  
Time Resolved ◽  
Confining Potential ◽  
Decay Times ◽  
Self Assembled

ABSTRACTWe have investigated the extent to which the emission wavelength of self-assembled InAs/GaAs quantum dots can be controlled by growth parameters using conventional solid source MBE. Changing from conventionally high growth rates to a very low growth rate (LGR) and a relatively high substrate temperature, tunes the photoluminescence (PL) emission from 1.1 μm to 1.3 μm at room temperature. Atomic force micrographs obtained from uncapped samples reveal that these LGRQDs are larger, lower in density and extremely uniform in size. The improved size uniformity is reflected in the reduction of the PL linewidth from 78 meV to 22 meV. Under conditions of high excitation, emission from the ground and two excited states each separated by ∼70 meV is observed. This implies a parabolic confining potential. Time resolved photoluminescence (TRPL) measurements of dots grown under the various growth conditions yield radiative lifetimes which reflect the depth of the confining potential. A comparison of the decay times measured for the excited states show that the relaxation of carriers within the dots cannot be ascribed to phonon effects.

Atomic Force Microscopy and Spectroscopy of Self-Assembled InAsSb Quantum Dots grown on InP Substrates by MOCVD

2004 ◽  
Vol 829 ◽  
Author(s):  
Yongkun Sin ◽  
Hyun I. Kim ◽  
Gary W. Stupian ◽  
Yueming Qiu
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Organic Chemical ◽  
Light Sources ◽  
Photoluminescence Intensity ◽  
Atomic Force ◽  
Self Assembled ◽  
Inp Substrates

ABSTRACTInAsSb quantum dot (QD) lasers are promising light sources with emission wavelengths beyond 2μm as recently demonstrated. We report the first detailed atomic force microscope (AFM) characterization of uncapped InAsSb quantum dots self-assembled on GaAs/In0.53Ga0.47As layers. These quantum dot structures are grown on (100) InP substrates by metal organic chemical vapor deposition (MOCVD). Growth conditions are chosen to maximize photoluminescence intensity and to obtain high output powers from Fabry-Perot lasers with one stack of InAsSb QDs. Conductive AFM is employed to simultaneously study topography, current image, and current-voltage (I-V) characteristics from various InAs1-ySby QDs with y varied between 0 and 0.25. Typical dot density is 4–5×1010/cm2 and dots are estimated to have a lateral dimension at the base of ∼40nm and a height of 2–5nm. I-V characteristics measured from individual InAsSb QDs are compared to those from InAs QDs. Also reported are electronic properties including energy band gaps of InAs and InAsSb QDs.

Magnetotunneling spectroscopy imaging of electron wave functions in self-assembled InAs quantum dots

2001 ◽  
Vol 171 (12) ◽  
pp. 1365
Author(s):  
E.E. Vdovin ◽  
Yu.N. Khanin ◽  
Yu.V. Dubrovskii ◽  
A. Veretennikov ◽  
A. Levin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Wave Functions ◽  
Electron Wave ◽  
Inas Quantum Dots ◽  
Self Assembled
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