Analysis of minority carrier lifetime for InAlAs/InGaAs high electron mobility transistors by using 1.55-μm femto-second pulse laser

2008 ◽  
Vol 5 (9) ◽  
pp. 2791-2794 ◽  
Author(s):  
Hirohisa Taguchi ◽  
Chihiro Sano ◽  
Hiroaki Murakami ◽  
Masashi Oura ◽  
Tsutomu Iida ◽  
...  
Keyword(s):  
Pulse Laser ◽  
Electron Mobility ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Impact of low dose gamma irradiation on electronic carrier transport in AlGaN/GaN High Electron Mobility Transistors

2015 ◽  
Vol 1792 ◽  
Author(s):  
Anupama Yadav ◽  
Elena Flitsiyan ◽  
Leonid Chernyak ◽  
Fan Ren ◽  
Stephen J. Pearton ◽  
...  
Keyword(s):  
Gamma Irradiation ◽  
Electron Mobility ◽  
Carrier Transport ◽  
Minority Carrier ◽  
High Electron Mobility Transistors ◽  
Electron Injection ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
The Impact

ABSTRACTAlGaN/GaN High Electron Mobility Transistors were exposed to 60Co gamma-irradiation to doses up to 300Gy. The impact of Compton- electron injection (due to gamma-irradiation) is studied through monitoring of minority carrier transport using Electron Beam Induced Current (EBIC) technique. Temperature dependent EBIC measurements were conducted on devices before and after exposure to the irradiation, which provide us with critical information on gamma-irradiation induced defects in the material. As a result of irradiation, minority carrier diffusion length increases significantly, with an accompanying decrease in the activation energy. This is consistent with the longer life time of minority carrier in the material’s valence band as a result of an internal electron injection and subsequent trapping of Compton electrons on neutral levels.

Low-Frequency Noise Investigation of AlGaN/GaN High-Electron-Mobility Transistors

2021 ◽  
pp. 108050
Author(s):  
Maria Glória Caño de Andrade ◽  
Luis Felipe de Oliveira Bergamim ◽  
Braz Baptista Júnior ◽  
Carlos Roberto Nogueira ◽  
Fábio Alex da Silva ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Low Frequency ◽  
High Electron Mobility Transistors ◽  
Frequency Noise ◽  
High Electron ◽  
Low Frequency Noise ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

scholarly journals Gate Capacitance and Off-State Characteristics of E-Mode p-GaN Gate AlGaN/GaN High-Electron-Mobility Transistors After Gate Stress Bias

2021 ◽  
Author(s):  
Yu-Chen Lai ◽  
Yi-Nan Zhong ◽  
Ming-Yan Tsai ◽  
Yue-Ming Hsin
Keyword(s):  
Leakage Current ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Gate Capacitance ◽  
Enhancement Mode ◽  
Electron Mobility Transistors ◽  
Higher Power ◽  
State Capacitance

AbstractThis study investigated the gate capacitance and off-state characteristics of 650-V enhancement-mode p-GaN gate AlGaN/GaN high-electron-mobility transistors after various degrees of gate stress bias. A significant change was observed in the on-state capacitance when the gate stress bias was greater than 6 V. The corresponding threshold voltage exhibited a positive shift at low gate stress and a negative shift when the gate stress was greater than 6 V, which agreed with the shift observation from the I–V measurement. Moreover, the off-state leakage current increased significantly after the gate stress exceeded 6 V during the off-state characterization although the devices could be biased up to 1000 V without breakdown. The increase in the off-state leakage current would lead to higher power loss.

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