Theory of hopping charge-carrier transport at large carrier concentrations in disordered organic solids: Polarons versus bare charge carriers

2008 ◽  
Vol 5 (3) ◽  
pp. 746-749 ◽  
Author(s):  
I. I. Fishchuk ◽  
A. Kadashchuk ◽  
H. Bässler
Keyword(s):  
Charge Carrier ◽  
Carrier Transport ◽  
Charge Carriers ◽  
Charge Carrier Transport ◽  
Organic Solids

Charge Carrier Transport along Grain Boundaries in Silicon

2013 ◽  
Vol 205-206 ◽  
pp. 293-298 ◽  
Author(s):  
Martin Kittler ◽  
Manfred Reiche ◽  
Hans Michael Krause
Keyword(s):  
Charge Carrier ◽  
Grain Boundaries ◽  
Carrier Transport ◽  
Room Temperature ◽  
Drain Current ◽  
Charge Carriers ◽  
Strong Increase ◽  
Charge Carrier Transport ◽  
Mobility Of Charge Carriers

The influence of GBs contained in the channel of MOS-FETs - fabricated in thin SOI layers - is demonstrated. The drain current measured at room temperature increases about 50 times for nFETs and about 10 times for pFETs, respectively, as compared to reference devices. The observations might be interpreted as a strong increase of the mobility of charge carriers. Moreover, the observed stepwise changes of the drain current at 5 K may point to Coulomb blockades.

scholarly journals Crystal facet engineering induced anisotropic transport of charge carriers in a perovskite

2018 ◽  
Vol 6 (43) ◽  
pp. 11707-11713 ◽  
Author(s):  
Hewei Yang ◽  
Yunzhan Zhou ◽  
Yijun Yang ◽  
Ding Yi ◽  
Tao Ye ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Carrier Transport ◽  
Charge Carriers ◽  
Charge Carrier Transport ◽  
Crystal Facet ◽  
Precise Control ◽  
Crystal Orientations ◽  
Perovskite Crystal ◽  
Anisotropic Transport ◽  
Optoelectronic Applications

Precise control of crystal orientations and macroscopic morphology of a perovskite crystal is crucial for various optoelectronic applications relying on charge carrier transport tuning along exposed crystal facets.

scholarly journals Charge carrier transport and recombination in disordered materials

2016 ◽  
Vol 56 (3) ◽  
pp. 182-189 ◽  
Author(s):  
Gytis Juška ◽  
Kęstutis Arlauskas ◽  
Kristijonas Genevičius
Keyword(s):  
Charge Carrier ◽  
Carrier Transport ◽  
Bulk Heterojunction ◽  
Charge Carrier Mobility ◽  
Thin Layers ◽  
Charge Carriers ◽  
Disordered Materials ◽  
Charge Carrier Transport ◽  
Bulk Heterojunctions ◽  
The Impact

In this brief review the methods for investigation of charge carrier transport and recombination in thin layers of disordered materials and the obtained results are discussed. The method of charge carrier extraction by linearly increasing voltage (CELIV) is useful for the determination of mobility, bulk conductivity and density of equilibrium charge carriers. The extraction of photogenerated charge carriers (photo-CELIV) allows one to independently investigate relaxation of both the mobility and density of photogenerated charge carriers. The extraction of injected charge carriers (i-CELIV) is effective for the independent investigation of transport peculiarities of both injected holes and electrons in bulk heterojunctions. For the investigation of charge carrier recombination we proposed integral time-of-flight (TOF) and double-injection (DI) current transient methods. The methods allowed us to obtain the following significant results: to determine the reason of the conductivity dependence on electric field strength and temperature in the amorphous and microcrystalline hydrogenated silicon and π-conjugated polymers, the time dependent Langevin recombination, the impact of morphology on charge carrier mobility, the reason of reduced Langevin recombination in RR-PHT (regioregular poly(3-hexylthiophene))/PCBM (1-(3-methoxycarbonyl)propyl-1phenyl-[6,6]-methanofullerene) bulk heterojunction structures – 2D Langevin recombination; and to evaluate that the mobility of holes is predetermined by off-diagonal dispersion in poly-PbO.

Charge carrier transport in a-Si:H/c-Si heterojunctions

2001 ◽  
Vol 664 ◽  
Author(s):  
Susanne von Aichberger ◽  
Frank Wünsch ◽  
Marinus Kunst
Keyword(s):  
Thin Films ◽  
Charge Carrier ◽  
Space Charge ◽  
Space Charge Region ◽  
Carrier Transport ◽  
Charge Carriers ◽  
Charge Carrier Transport ◽  
Excess Charge ◽  
Si Substrate ◽  
Transient Photoconductivity

ABSTRACTContactless transient photoconductivity measurements of a-Si:H / c-Si heterojunctions are presented. It is shown that n a-Si:H / n c-Si junctions furnish an excellent passivation of the n c-Si surface. For i a-Si:H / n c-Si junctions the passivation is better for thicker films, whereas for very thin films (10 nm or less) a deviating behaviour probably due to inhomogeneities is observed. For the p a-Si:H / n c-Si junction separation of excess charge carriers in the space charge region is observed leading to a slowly decaying tail of the signal. This separation is also observed in thick i a-Si:H / n c-Si samples where electrons are injected from the a-Si:H film in the c-Si substrate.

scholarly journals Charge-Carrier Transport in Thin Film Solar Cells: New Formulation

2011 ◽  
Vol 2011 ◽  
pp. 1-5 ◽  
Author(s):  
Jesús E. Velazquez-Perez ◽  
Yuri G. Gurevich
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Charge Carrier ◽  
Carrier Transport ◽  
Closed Form Solution ◽  
Open Circuit ◽  
Charge Carriers ◽  
Thin Film Solar Cells ◽  
Charge Carrier Transport ◽  
New Formulation

Solar cells rely on photogeneration of charge carriers in p-n junctions and their transport and subsequent recombination in the quasineutral regions. A number of basic issues concerning the physics of the operation of solar cells still remain obscure. This paper discusses some of those unsolved basic problems. In conventional solar cells, recombination of photogenerated charge carriers plays a major limiting role in the cell efficiency. High quality thin-film solar cells may overcome this limit if the minority diffusion lengths become large as compared to the cell dimensions, but, strikingly, the conventional model fails to describe the cell electric behavior under these conditions. A new formulation of the basic equations describing charge carrier transport in the cell along with a set of boundary conditions is presented. An analytical closed-form solution is obtained under a linear approximation. In the new framework given, the calculation of the open-circuit voltage of the solar cell diode does not lead to unphysical results.

On the description of charge carrier transport in disordered organic solids

2001 ◽  
Vol 119 (1-3) ◽  
pp. 57-60 ◽  
Author(s):  
S.D. Baranovskii ◽  
H. Cordes ◽  
F. Hensel ◽  
S. Yamasaki
Keyword(s):  
Charge Carrier ◽  
Carrier Transport ◽  
Charge Carrier Transport ◽  
Organic Solids

Charge-carrier transport in disordered organic solids

2000 ◽  
Vol 62 (12) ◽  
pp. 7934-7938 ◽  
Author(s):  
S. D. Baranovskii ◽  
H. Cordes ◽  
F. Hensel ◽  
G. Leising
Keyword(s):  
Charge Carrier ◽  
Carrier Transport ◽  
Charge Carrier Transport ◽  
Organic Solids

ChemInform Abstract: Description of Charge Carrier Transport in Disordered Organic Solids

ChemInform ◽  
2010 ◽  
Vol 32 (39) ◽  
pp. no-no
Author(s):  
S. D. Baranovskii ◽  
H. Cordes ◽  
F. Hensel ◽  
S. Yamasaki
Keyword(s):  
Charge Carrier ◽  
Carrier Transport ◽  
Charge Carrier Transport ◽  
Organic Solids ◽  
Abstract Description
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