Multi-color light emitting diode using polarization-induced tunnel junctions

2007 ◽  
Vol 4 (7) ◽  
pp. 2830-2833 ◽  
Author(s):  
Michael J. Grundmann ◽  
Umesh K. Mishra
Keyword(s):  
Tunnel Junctions ◽  
Light Emitting Diode ◽  
Light Emitting

GaN-based three-junction cascaded light-emitting diode with low-resistance InGaN tunnel junctions

2015 ◽  
Vol 8 (8) ◽  
pp. 082103 ◽  
Author(s):  
Fatih Akyol ◽  
Sriram Krishnamoorthy ◽  
Yuewei Zhang ◽  
Siddharth Rajan
Keyword(s):  
Tunnel Junctions ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Low Resistance

scholarly journals Vertical Integration of Nitride Laser Diodes and Light Emitting Diodes by Tunnel Junctions

Electronics ◽  
2020 ◽  
Vol 9 (9) ◽  
pp. 1481
Author(s):  
Marcin Siekacz ◽  
Grzegorz Muziol ◽  
Henryk Turski ◽  
Mateusz Hajdel ◽  
Mikolaj Żak ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Light Emitting Diode ◽  
Lattice Relaxation ◽  
Pulse Mode ◽  
Light Emitting ◽  
Low Dislocation Density ◽  
Key Factor ◽  
Type Contact ◽  
Cascade Emission ◽  
P Type

We demonstrate the applications of tunnel junctions (TJs) for new concepts of monolithic nitride-based multicolor light emitting diode (LED) and laser diode (LD) stacks. The presented structures were grown by plasma-assisted molecular beam epitaxy (PAMBE) on GaN bulk crystals. We demonstrate a stack of four LDs operated at pulse mode with emission wavelength of 453 nm. The output power of 1.1 W and high slope efficiency of 2.3 W/A is achieved for devices without dielectric mirrors. Atomically flat surface after the epitaxy of four LD stack and low dislocation density is measured as a result of proper TJ design with optimized doping level. The strain compensation design with InGaN waveguides and AlGaN claddings is shown to be crucial to avoid cracking and lattice relaxation of the 5 µm thick structure. Vertical connection of n-LDs allows for cascade emission of photons and increases the quantum efficiency n-times. The two-color (blue and green) LEDs are demonstrated. Application of TJs simplifies device processing, reducing the need for applications of p-type contact. The key factor enabling demonstration of such devices is hydrogen-free PAMBE technology, in which activation of buried p-type layers is not necessary.

Over 1000 channel nitride-based micro-light-emitting diode arrays with tunnel junctions

2014 ◽  
Vol 53 (5S1) ◽  
pp. 05FL06 ◽  
Author(s):  
Masahiro Watanabe ◽  
Keisuke Nakajima ◽  
Mitsuru Kaga ◽  
Yuka Kuwano ◽  
Daichi Minamikawa ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Light Emitting Diode ◽  
Light Emitting

Synchronization of Chaotic Quantum Dot Light Emitting Diodes under Optical Feedback Effect

2020 ◽  
pp. 144-148
Keyword(s):  
Quantum Dot ◽  
Delay Time ◽  
Chaos Synchronization ◽  
Optical Feedback ◽  
Light Emitting Diode ◽  
Feedback Effect ◽  
Complete Synchronization ◽  
Light Emitting ◽  
Coupling Methods ◽  
Coupling Parameters

Chaos synchronization of delayed quantum dot light emitting diode has been studied theortetically which are coupled via the unidirectional and bidirectional. at synchronization of chaotic, The dynamics is identical with delayed optical feedback for those coupling methods. Depending on the coupling parameters and delay time the system exhibits complete synchronization, . Under proper conditions, the receiver quantum dot light emitting diode can be satisfactorily synchronized with the transmitter quantum dot light emitting diode due to the optical feedback effect.

Effects of Nitridation Time on Top-emission Inverted Organic Light Emitting Diode

PIERS Online ◽  
2007 ◽  
Vol 3 (6) ◽  
pp. 821-824 ◽  
Author(s):  
Chien-Chang Tseng ◽  
Liang-Wen Ji ◽  
Yu Sheng Tsai ◽  
Fuh-Shyang Juang
Keyword(s):  
Light Emitting Diode ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Nitridation Time ◽  
Organic Light

Items Searching in Factory Warehouse Using Arduino Module

2019 ◽  
Vol 1 (1) ◽  
pp. 1-14
Author(s):  
Tan Liong Ching ◽  
Nureize Binti Arbaiy
Keyword(s):  
Inventory Management ◽  
Liquid Crystal Display ◽  
Light Emitting Diode ◽  
Storage System ◽  
Voice Recognition ◽  
Inventory System ◽  
Search Process ◽  
Light Emitting ◽  
Recognition Function ◽  
Light Function

The smart store system (F3 Storage System) provides an inventory system function, and is supported by voice recognition for items searching purpose in the warehouse. This system is aimed to improve effectiveness in item searching process for the warehouse management. An inventory system structures is employed in this system to enable items management. Voice recognition facility helps the worker to search item in an effective way. Worker can use voice recognition function to search the item in the warehouse, and searched information of the item will be displayed in the liquid crystal display (LCD) screen. Meanwhile, the location of the item will be physically indicated by the light emitting diode (LED) light function. The developed system also contains a barcode system to enhance the process of scheduling warehouse activity. Such facilities will enhance the capabilities of existing inventory management systems in warehouses. Prototyping model is used to assist project development. Arduino technology is used to enable integrated hardware and software to read data or input. With Arduino technology, traditional search items by using text and search functionality are enhanced to allow speech functionality. This functionality makes the search process faster and more efficient.

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