Approach to reduce the residual strain in bulk InGaAs crystals grown by the multi-component zone melting method

2007 ◽  
Vol 4 (4) ◽  
pp. 1415-1418
Author(s):  
M. S. Rahman ◽  
M. R. Islam ◽  
M. S. Alam ◽  
M. Yamada
Keyword(s):  
Residual Strain ◽  
Zone Melting ◽  
Melting Method

scholarly journals Preparation of Bulky Zr-Based Amorphous Alloys by a Zone Melting Method

1994 ◽  
Vol 35 (12) ◽  
pp. 923-926 ◽  
Author(s):  
Akihisa Inoue ◽  
Yoshihiko Yokoyama ◽  
Yoshiyuki Shinohara ◽  
Tsuyoshi Masumoto
Keyword(s):  
Amorphous Alloys ◽  
Zone Melting ◽  
Melting Method

Thermoelectric Properties of n-type (Bi2Se3)x(Bi2Te3)1-x Crystals Prepared by Zone Melting

2008 ◽  
Vol 368-372 ◽  
pp. 547-549
Author(s):  
Jun Jiang ◽  
Ya Li Li ◽  
Gao Jie Xu ◽  
Ping Cui ◽  
Li Dong Chen
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Carrier Concentration ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Zone Melting ◽  
Chemical Compositions ◽  
Melting Method ◽  
Temperature Range

In the present study, n-type (Bi2Se3)x(Bi2Te3)1-x crystals with various chemical compositions were fabricated by the zone melting method. Thermoelectric properties, including Seebeck coefficient (α), electrical conductivity (σ) and thermal conductivity (κ), were measured in the temperature range of 300-500 K. The influence of the variations of Bi2Te3 and Bi2Se3 content on thermoelectric properties was studied. The increase of Bi2Se3 content (x) caused an increase in carrier concentration and thus an increase of σ and a decrease of α. The maximum figure of merit (ZT = α2σT/κ) of 0.87 was obtained at about 325 K for the composition of 93%Bi2Te3-7%Bi2Se3 with doping TeI4.

Thermoelectric properties of Rh-doped Ru2Si3 prepared by floating zone melting method

2001 ◽  
Vol 294 (1-2) ◽  
pp. 202-205 ◽  
Author(s):  
Yuji Arita ◽  
Satoshi Mitsuda ◽  
Yoshimasa Nishi ◽  
Tsuneo Matsui ◽  
Takanori Nagasaki
Keyword(s):  
Thermoelectric Properties ◽  
Zone Melting ◽  
Floating Zone ◽  
Melting Method

Crystallinity of Recrystallized Si on SiO2, by Zone Melting Method

1983 ◽  
Author(s):  
Kohei Higuchi ◽  
Shuichi Saitoh ◽  
Hidekazu Okabayashi
Keyword(s):  
Zone Melting ◽  
Melting Method

Growth of near stoichiometric LiNbO3 crystals by a modified zone melting method

2005 ◽  
Vol 402 (1-2) ◽  
pp. 224-226 ◽  
Author(s):  
W.Y. Wang ◽  
X.L. Chen ◽  
D.Q. Ni ◽  
D.F. Zhang ◽  
X. Wu
Keyword(s):  
Zone Melting ◽  
Melting Method

Growth of Uniform InGaAs Bulk Crystal by Multi-Component Zone Melting Method

1995 ◽  
Vol 417 ◽  
Author(s):  
T. Kusunoki ◽  
K. Nakajima ◽  
H. Shoji ◽  
T. Suzuki
Keyword(s):  
Quantum Well ◽  
Current Density ◽  
Threshold Current ◽  
Zone Melting ◽  
Threshold Current Density ◽  
Bulk Crystal ◽  
Minimum Threshold ◽  
Melting Method ◽  
Strained Quantum Well ◽  
Uniform Composition

AbstractWe have developed a Multi-component Zone Melting method to grow a ternary compound crystal which has a uniform composition. A 4.5 mm long InGaAs bulk crystal with a uniform InAs composition of 0.3 has been successfully grown using this method. InGaAlAs/InGaAs strained quantum well lasers were fabricated on an In0. 2Ga0.8As substrate which was grown by this method. A minimum threshold current density of 280 A/cm2 was achieved.

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