Nanoscale changes of the order parameter and current flow in HTSC thin films of YBCO and TBCCO

2006 ◽  
Vol 3 (9) ◽  
pp. 2953-2956
Author(s):  
H. Darhmaoui ◽  
J. Jung ◽  
H. Yan
Keyword(s):  
Thin Films ◽  
Order Parameter ◽  
Current Flow ◽  
Htsc Thin Films

Magneto‐optic observation of anomalous Meissner current flow in superconducting thin films with slits

1996 ◽  
Vol 69 (23) ◽  
pp. 3590-3592 ◽  
Author(s):  
M. Baziljevich ◽  
T. H. Johansen ◽  
H. Bratsberg ◽  
Y. Shen ◽  
P. Vase
Keyword(s):  
Thin Films ◽  
Current Flow ◽  
Superconducting Thin Films ◽  
Magneto Optic

Space-charge-limited current flow in gallium nitride thin films

1974 ◽  
Vol 10 (2) ◽  
pp. 582-590 ◽  
Author(s):  
J. C. Vesely ◽  
M. Shatzkes ◽  
P. J. Burkhardt
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
Space Charge ◽  
Current Flow ◽  
Space Charge Limited Current ◽  
Limited Current ◽  
Space Charge Limited

Structural and Electrical Properties of Titania Thin Films

2014 ◽  
Vol 925 ◽  
pp. 300-303 ◽  
Author(s):  
Sharipah Nadzirah ◽  
Uda Hashim ◽  
N. Malihah
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Titanium Dioxide ◽  
Current Flow ◽  
Sol Gel ◽  
Particle Sizes ◽  
Structural And Electrical Properties ◽  
Crystallite Sizes ◽  
Average Current ◽  
Flow Through

This research studies the properties of titanium dioxide (TiO2) nanoparticles synthesized by two different stabilizers via sol-gel method. Acetic and hydrochloric acids have been used as stabilizers to form two different TiO2 thin films. 100 μm gap of Al IDEs have been fabricated on each annealed TiO2 films. Finally the samples were physically and electrically characterized. Average crystallite sizes of the nanoparticles are 20 and 25 nm for acetic and hydrochloric acid respectively. The average current flow through the devices was extremely small which are around micro-to-nanoampere. It was found that the electrical conductivity increased significantly when particle sizes decreases.

Electrical current flow at conductive nanowires formed in GaN thin films by a dislocation template technique

2010 ◽  
Vol 96 (19) ◽  
pp. 193109 ◽  
Author(s):  
Shin-ichi Amma ◽  
Yuki Tokumoto ◽  
Keiichi Edagawa ◽  
Naoya Shibata ◽  
Teruyasu Mizoguchi ◽  
...  
Keyword(s):  
Thin Films ◽  
Current Flow ◽  
Electrical Current ◽  
Electrical Current Flow

Anomalous change of carrier transport property of ferroelectric Hf0.5Zr0.5O2 thin films in the first poling treatment

2022 ◽  
Author(s):  
Yukinori Morita ◽  
Hiroyuki OTA ◽  
Shinji MIGITA
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Transport Property ◽  
Carrier Transport ◽  
Current Flow ◽  
Discontinuity Point ◽  
Voltage Sweep ◽  
Current Voltage ◽  
Carrier Transport Property ◽  
Carrier Transport Properties

Abstract Carrier transport properties of ferroelectric Hf0.5Zr0.5O2 (HZO) thin films have been investigated on metal-ferroelectric-metal (MFM) capacitor in the first current flow of ferroelectric poling treatment. In current–voltage (I–V) measurement of MFM capacitor, a kink or discontinuity point of derivative in I–V characteristic appears, and after the cyclic voltage sweep this kink disappears. This phenomenon is different from the ferroelectric instabilities after several thousand or million voltage cycle applies reported as the wake-up and fatigue. From the analysis using Poole-Frenkel plot of I–V characteristics, it is suggested that irreversible trap generation by electric field apply occurs in poling treatment.

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