Infrared reflectance measurement for InN thin film characterization

2006 ◽  
Vol 3 (6) ◽  
pp. 1874-1878 ◽  
Author(s):  
K. Fukui ◽  
Y. Kugumiya ◽  
N. Nakagawa ◽  
A. Yamamoto
1995 ◽  
Vol 389 ◽  
Author(s):  
Shaohua Liu ◽  
Peter Solomon ◽  
R. Carpio ◽  
B. Fowler ◽  
D. Simmons ◽  
...  

ABSTRACTThis paper outlines our current approach to utilize infrared reflectance spectroscopy for thin film measurement in the semiconductor industry. The multi-layer thickness and doping concentration of IC wafers can be determined by a single angle, unpolarized infrared reflectance measurement performed using Fourier transform infrared spectrometer. A computer algorithm, which matches theoretical to measured infrared reflectance spectra, was successfully employed to determine multiple thin film properties.


1995 ◽  
Vol 387 ◽  
Author(s):  
Shaohua Liu ◽  
Peter Solomon ◽  
R. Carpio ◽  
B. Fowler ◽  
D. Simmons ◽  
...  

AbstractThis paper outlines our current approach to utilize infrared reflectance spectroscopy for thin film measurement in the semiconductor industry. The multi-layer thickness and doping concentration of IC wafers can be determined by a single angle, unpolarized infrared reflectance measurement performed using Fourier transform infrared spectrometer. A computer algorithm, which matches theoretical tc measured infrared reflectance spectra, was successfully employed to determine multiple thin film properties.


1995 ◽  
Vol 8 (8) ◽  
pp. 667-672 ◽  
Author(s):  
D P Almond ◽  
A K Barker ◽  
A C Bento ◽  
S K Singh ◽  
N J Appleyard ◽  
...  

2006 ◽  
Vol 203 (2) ◽  
pp. 379-385
Author(s):  
Qingduan Meng ◽  
Xueqiang Zhang ◽  
Fei Li ◽  
Jiandong Huang ◽  
Xiaohong Zhu ◽  
...  

2020 ◽  
Vol 28 (7) ◽  
pp. 9288 ◽  
Author(s):  
Andrey Nazarov ◽  
Michael Ney ◽  
Ibrahim Abdulhalim

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